Junction Field Effect Transistor X-RAY Detectors

1993 ◽  
Vol 302 ◽  
Author(s):  
J.C. Lund ◽  
F. Olschner ◽  
L. Rehn

ABSTRACTWe describe the theory of operation, design, and estimated performance of an n-channel JFET designed to be operated as a detector in an X-ray spectrometer system. We estimate that a room temperature (300 K) JFET detector can be built with performance comparable to a small area, cryogenically cooled Si(Li) detector.

2022 ◽  
Author(s):  
Zhaocong Huang ◽  
Wenqing Liu ◽  
Jian Liang ◽  
Qingjie Guo ◽  
Ya Zhai ◽  
...  

Abstract Research in the spintronics community has been intensively stimulated by the proposal of the spin field-effect transistor (SFET), which has the potential for combining the data storage and process in a single device. Here we report the spin dependent transport on a Fe3O4/GaAs based lateral structured device. Parallel and antiparallel states of two Fe3O4 electrodes are achieved. A clear MR loop shows the perfect butterfly shape at room temperature, of which the intensity decreases with the reducing current, showing the strong bias-dependence. Understanding the spin dependent transport properties in this architecture has strong implication in further development of the spintronic devices for room-temperature SFET.


Nano Letters ◽  
2015 ◽  
Vol 15 (5) ◽  
pp. 2958-2964 ◽  
Author(s):  
Romain Lavieville ◽  
François Triozon ◽  
Sylvain Barraud ◽  
Andrea Corna ◽  
Xavier Jehl ◽  
...  

Nano Letters ◽  
2011 ◽  
Vol 11 (7) ◽  
pp. 2875-2880 ◽  
Author(s):  
Nina Hrauda ◽  
Jianjun Zhang ◽  
Eugen Wintersberger ◽  
Tanja Etzelstorfer ◽  
Bernhard Mandl ◽  
...  

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