Simulation of a-Si:H Color Sensors for Application in Intelligent Sensor Systems

1993 ◽  
Vol 297 ◽  
Author(s):  
H. Stiebig ◽  
M. BÖhm
Keyword(s):  
Defect Density ◽  
Major Influence ◽  
Device Performance ◽  
Response Curves ◽  
Intelligent Sensor ◽  
Current Voltage ◽  
Color Sensors ◽  
Current Densities ◽  
Silicon Based ◽  
Simulation Point

Amorphous silicon based n-i-p-i-n structures may be used as color detectors. A simulation program has been developed which allows the examination of the spatial distribution of carrier concentrations, electric field and current densities under different illumination conditions. Furthermore current/voltage- and monochromatic response curves are presented. The results of the simulation point out that the defect density in the p-layer has a major influence on device performance.

scholarly journals C-V and I-V characterisation of CdS/CdTe thin film solar cell using defect density model

2021 ◽  
Vol 18 (2) ◽  
pp. 255-270
Author(s):  
Debashish Pal ◽  
Soumee Das
Keyword(s):  
Solar Cell ◽  
Defect Density ◽  
Spectral Response ◽  
Energy Band Diagram ◽  
Density Model ◽  
Device Performance ◽  
Low Frequencies ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Impurity Doping

This paper presents a detailed study of the current-voltage (I-V) and capacitance-voltage (C-V) measurements made on a CdS/CdTe based solar cell by numerical modeling. Implementation of the simulated cell having a superstrate configuration was done with the help of SCAPS program using defect density model. The I-V characterisation includes window and absorber layer optimisation based on various factors including the impurity doping concentration, thickness and defect density. The energy band diagram, spectral response and currentvoltage plot of the optimised cell configuration are shown. C-V characterisation (Mott-Schottky analysis) of the solar cell is conducted at different low frequencies to determine the flatband potential, carrier concentration and to validate the reliability of the results. The optimum device performance was obtained when the active layer was 2 ?m thick with a doping level of 1?1015/cm3.

A Study of Pt/AlN/6H-SiC MIS Structures for Device Applications

2000 ◽  
Vol 622 ◽  
Author(s):  
Margarita P. Thompson ◽  
Gregory W. Auner ◽  
Changhe Huang ◽  
James N. Hilfiker
Keyword(s):  
Plasma Source ◽  
Film Structure ◽  
Low Leakage ◽  
Low Leakage Current ◽  
Current Voltage ◽  
Aln Film ◽  
Capacitance Voltage ◽  
Device Applications ◽  
Current Densities ◽  
Mis Structures

ABSTRACTAlN films with thicknesses from 53 to 79 nm were deposited on 6H-SiC substrates via Plasma Source Molecular Beam Epitaxy (PSMBE). The influence of deposition temperature on the growth mode and film roughness was assessed. The optical constants of the films in the range 0.73-8.75 eV were determined using spectroscopic ellipsometry. Pt/AlN/6H-SiC MIS structures were created and current-voltage (I-V) and capacitance-voltage (C-V) measurements were performed at room temperature and at 250°C. Most of the MIS structures showed rectifying I-V characteristics regardless of growth temperature. A 120-nm-thick AlN film was deposited at 500°C. MIS structures created on this film showed a very low leakage current densities of 6×10−8 A/cm2. The dielectric constant of the film was estimated at approximately 9. The relation between film structure and electrical properties of the films is discussed.

Attainment of Stable (FTO/ZnO/CdS/CH3NH3SnI3/GaAs/Au) Perovskite Solar Cell With Above 23% Photovoltaic Performance Using Solar Capacitance Simulator

2021 ◽  
Author(s):  
Irfan Qasim ◽  
Owais Ahmad ◽  
Asim Rashid ◽  
Tashfeen Zehra ◽  
Muhammad Imran Malik ◽  
...  
Keyword(s):  
Solar Cells ◽  
Defect Density ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Hole Transport ◽  
Transport Layer ◽  
Buffer Layers ◽  
Electron Transport Layer ◽  
Device Performance ◽  
Highly Efficient

Abstract Solar energy is found to be low cost and abundant of all available energy resources and needs exploration of highly efficient devices for global energy requirements. We have investigated methyl ammonium tin halide (CH3NH3SnI3)-based perovskite solar cells (PSCs) for optimized device performance using solar capacitance simulator SCAPS-1D software. This study is a step forward towards availability of stable and non-toxic solar cells. We explored all necessary parameters such as metal work functions, thickness of absorber and buffer layers, charge carrier’s mobility and defect density for improved device performance. Calculations revealed that for the best efficiency of device the maximum thickness of the perovskite absorber layer must be 4.2 μm. Furthermore, optimized thickness values of (ZnO=0.01 μm) as electron transport layer (ETL), GaAs as hole transport layer (HTL=3.02 μm) and (CdS=10 nm) and buffer layer have provided power conversion efficiency (PCE) of 23.53%. Variation of open circuit voltage (Voc), Short circuit current (Jsc), Fill Factor (FF%) and quantum efficiency against thickness of all layers in FTO/ZnO/CdS/CH3NH3SnI3/GaAs/Au compositions have been critically explored and reported. Interface defects and defect density in different inserted layers have also been reported in this study as they can play a crucial for the device performance. Insertion of ZnO layer and CdS buffer layers have shown improved device performance and PCE. Current investigations may prove to be useful for designing and fabrication of climate friendly, non-toxic and highly efficient solar cells.

scholarly journals Low Dark Current and Performance Enhanced Perovskite Photodetector by Graphene Oxide as an Interfacial Layer

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 190
Author(s):  
Ali Hassan ◽  
Muhammad Azam ◽  
Yeong Hwan Ahn ◽  
Muhammad Zubair ◽  
Yu Cao ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Dark Current ◽  
High Performance ◽  
Carrier Transport ◽  
Defect Density ◽  
Low Cost ◽  
Degradation Process ◽  
Device Performance ◽  
Interface Engineering ◽  
Defect Passivation

Organic–inorganic hybrid perovskite photodetectors are gaining much interest recently for their high performance in photodetection, due to excellent light absorption, low cost, and ease of fabrication. Lower defect density and large grain size are always favorable for efficient and stable devices. Herein, we applied the interface engineering technique for hybrid trilayer (TiO2/graphene oxide/perovskite) photodetector to attain better crystallinity and defect passivation. The graphene oxide (GO) sandwich layer has been introduced in the perovskite photodetector for improved crystallization, better charge extraction, low dark current, and enhanced carrier lifetime. Moreover, the trilayer photodetector exhibits improved device performance with a high on/off ratio of 1.3 × 104, high responsivity of 3.38 AW−1, and low dark current of 1.55 × 10−11 A. The insertion of the GO layer also suppressed the perovskite degradation process and consequently improved the device stability. The current study focuses on the significance of interface engineering to boost device performance by improving interfacial defect passivation and better carrier transport.

scholarly journals Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Theoretical Work ◽  
Silicon Based ◽  
The Impact ◽  
Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

Controlled Carbon Nanotube Networks and its Corresponding Channel Effect at High Bias

2006 ◽  
Vol 963 ◽  
Author(s):  
Jun Huang ◽  
Bangalore Kiran Rao ◽  
Harindra Vedala ◽  
Do-Hyun Kim ◽  
Minhyon Jeon ◽  
...  
Keyword(s):  
Carbon Nanotube ◽  
Electrical Breakdown ◽  
Single Walled Carbon Nanotube ◽  
Large Current ◽  
Linear Resistance ◽  
Current Voltage ◽  
Multi Walled Carbon Nanotube ◽  
High Bias ◽  
Current Densities ◽  
Carbon Nanotube Networks

ABSTRACTGeometrically controlled single-walled carbon nanotube (SWNT) and multi-walled carbon nanotube (MWNT) networks were fabricated by a width confinement technique to characterize their electrical characteristics. The results demonstrated non-linear resistance decay with the number of conducting channels. The current-voltage characteristics at high field were studied until the electrical breakdown took place. Large current (∼2 mA), low resistance (∼5 KΩ) and current densities exceeding ∼108 A/cm2 were demonstrated from multi-channel MWNT networks confined in a 10 μm × 15 μm trench. Additionally, chronological SEM imaging was used to identify the breakdown sequences in the carbon nanotube networks, which revealed a strong tendency for CNT breakdown to occur in the vicinity of CNT-CNT intersections. Our results offer insights for interconnect applications using CNT networks.

Correlation between film and cell properties for DC plasma deposited amorphous silicon

2001 ◽  
Vol 664 ◽  
Author(s):  
Jennifer Heath ◽  
Suman B. Iyer ◽  
Yoram Lubianiker ◽  
J. David Cohen ◽  
Gautam Ganguly
Keyword(s):  
Growth Rate ◽  
Amorphous Silicon ◽  
Defect Density ◽  
Silicon Film ◽  
Device Performance ◽  
Solar Cell Device ◽  
Film Properties ◽  
Dc Plasma ◽  
Hydrogen Dilution ◽  
Photocurrent Spectroscopy

ABSTRACTWe have carried out measurements to try to correlate amorphous silicon film properties with companion solar cell device performance. The dc plasma deposited intrinsic films were prepared with various hydrogen dilution levels, and increasing power levels to increase growth rate. The electronic properties were determined using admittance spectroscopy and drive-level capacitance profiling (DLCP) techniques as well as transient photocapacitance and photocurrent spectroscopy. Cell and film performance were explored in both as-grown and light-soaked states. We observed that, although cell performance decreased systematiclly with increasing growth rate, it depended on factors other than the deep defect density in the matched films. On the other hand, we did observe that increases in defect density caused by the light-induced degradation led to fairly predictable decreases in the cell fill factors.

Gate Oxide Integrity as Affected by Hf Last Wafer Treatments and Passivating Techniques

1993 ◽  
Vol 303 ◽  
Author(s):  
R.C. Hawthorne ◽  
R.P.S. Thakur ◽  
K. Morinville ◽  
R. Kauffman
Keyword(s):  
Defect Density ◽  
Gate Oxide ◽  
Device Performance ◽  
Primary Process ◽  
Chemical Treatments ◽  
The Past ◽  
Performance Requirements ◽  
Wafer Cleaning ◽  
Processing Data ◽  
Wafer Surfaces

ABSTRACTAs device performance requirements increase, device features become smaller and films become thinner. The resultant sensitivity to defect density is such that controlling the condition of wafer surfaces prior to primary process steps becomes more and more critical. Wafer cleaning technologies of the past may not be optimum in providing needed device characteristics and reliability of tomorrow's semiconductors. In this paper, we compare the currently used RCA wafer clean chemistries to newer HF last, vapor dry technologies which use direct displacement of liquids to minimize contaminants. Subsequent passivation of these hydrophobic wafer surfaces is accomplished by various methods of oxidation including chemical treatments and RTP processing. Data collected from I-V, SIMS and DEFECT DENSITY testing will be included in the presentation.

Effects of Additive Elements on Electrical Properties of Tantalum Oxide Films.

1995 ◽  
Vol 378 ◽  
Author(s):  
Hisayoshi Fujikawa ◽  
Yasunori Taga
Keyword(s):  
Electrical Properties ◽  
Conduction Mechanism ◽  
Defect Density ◽  
Tantalum Oxide ◽  
Composite Films ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Electrical Conduction Mechanisms ◽  
Insulating Properties ◽  
Nordheim Tunneling

AbstractTa2O5-based composite films prepared by magnetron sputtering have been investigated with respect to their dielectric properties. As additive third oxides, Y2O3 and WO3 were found to be effective in improving insulating properties without decreasing their dielectric constant. Furthermore, electrical properties of Ta2O5-Y2O3 films were investigated by measuring the current-voltage characteristics in the temperature range from 100 to 330 K. Measurement of temperature dependence of the leakage current revealed that the conduction mechanism at RT changed from the Poole-Frenkel type to the Fowler-Nordheim tunneling type by adding Y2O3 into Ta2O5. Based on the detailed analysis of the results, it is concluded that the addition of Y2O3 into the Ta2O5 film is effective in the reduction of defect density without high-temperature annealing and the alteration of electrical conduction mechanisms of the films.

Electronic Defects and Device Performance in CuGaSe2 Solar Cells

2007 ◽  
Vol 1012 ◽  
Author(s):  
J. Jedediah Rembold ◽  
Todd W. Curtis ◽  
Jennifer T. Heath ◽  
David L. Young ◽  
Steve W. Johnston ◽  
...  
Keyword(s):  
Solar Cells ◽  
Defect Density ◽  
Wide Bandgap ◽  
Device Performance ◽  
Defect States ◽  
Materials Properties ◽  
Interface Recombination ◽  
Interface Defect ◽  
Limited Supply ◽  
Electronic Defects

AbstractThe electronic and materials properties of two series of wide-bandgap solar cells with Cu-poor CuGaSe2 (CGS) absorbers have been studied, to better understand limitations on the device performance. One series of samples displayed distinct lateral non-uniformities in Cu/Ga ratio, Na content, and thickness, likely due to a limited supply of Se during CGS growth. The second series of samples appeared uniform. The most prominent electronic difference was the presence of a distinct band of near-interface defect states in the more non-uniform set of samples. The device performance did not appear to be limited by defects in the bulk CGS film until the defect density was larger than 2×1016 cm-3. Instead, interface recombination appears to be a significant factor limiting Voc in both sets of samples.

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