scholarly journals C-V and I-V characterisation of CdS/CdTe thin film solar cell using defect density model

2021 ◽  
Vol 18 (2) ◽  
pp. 255-270
Author(s):  
Debashish Pal ◽  
Soumee Das
Keyword(s):  
Solar Cell ◽  
Defect Density ◽  
Spectral Response ◽  
Energy Band Diagram ◽  
Density Model ◽  
Device Performance ◽  
Low Frequencies ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Impurity Doping

This paper presents a detailed study of the current-voltage (I-V) and capacitance-voltage (C-V) measurements made on a CdS/CdTe based solar cell by numerical modeling. Implementation of the simulated cell having a superstrate configuration was done with the help of SCAPS program using defect density model. The I-V characterisation includes window and absorber layer optimisation based on various factors including the impurity doping concentration, thickness and defect density. The energy band diagram, spectral response and currentvoltage plot of the optimised cell configuration are shown. C-V characterisation (Mott-Schottky analysis) of the solar cell is conducted at different low frequencies to determine the flatband potential, carrier concentration and to validate the reliability of the results. The optimum device performance was obtained when the active layer was 2 ?m thick with a doping level of 1?1015/cm3.

Simulation and modeling of the influence of temperature on CdS/CdTe thin film solar cell

2019 ◽  
Vol 87 (3) ◽  
pp. 30101 ◽  
Author(s):  
Abdel-baset H. Mekky
Keyword(s):  
Thin Film ◽  
Solar Cell ◽  
Quantum Efficiency ◽  
External Quantum Efficiency ◽  
Influence Of Temperature ◽  
Cdte Solar Cell ◽  
Cell Parameters ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Influence Of Temperature On

Semiconductor materials cadmium sulfide (CdS) and cadmium telluride (CdTe) are employed in the fabrication of thin film solar cells of relatively excessive power conversion efficiency and low producing price. Simulations of thin film CdS/CdTe solar cell were carried out using SCAPS-1D. The influence of temperature field on the variation of CdTe solar cell parameters such as current–voltage, capacitance–voltage characteristics and the external quantum efficiency was investigated theoretically. For use temperatures, one obtains the external quantum efficiency has the same profiles. However, the effect of the temperature on the Mott-Schottky curves is slightly noted by variations on the characteristics. This conclusion can be used by solar cell manufacturers to improve the solar cell parameters with the biggest possible gain in device performance.

Simulation of a-Si:H Color Sensors for Application in Intelligent Sensor Systems

1993 ◽  
Vol 297 ◽  
Author(s):  
H. Stiebig ◽  
M. BÖhm
Keyword(s):  
Defect Density ◽  
Major Influence ◽  
Device Performance ◽  
Response Curves ◽  
Intelligent Sensor ◽  
Current Voltage ◽  
Color Sensors ◽  
Current Densities ◽  
Silicon Based ◽  
Simulation Point

Amorphous silicon based n-i-p-i-n structures may be used as color detectors. A simulation program has been developed which allows the examination of the spatial distribution of carrier concentrations, electric field and current densities under different illumination conditions. Furthermore current/voltage- and monochromatic response curves are presented. The results of the simulation point out that the defect density in the p-layer has a major influence on device performance.

Effect of a-SiC:H Film Composition on the Performance of Large Area Optical Sensors

2001 ◽  
Vol 685 ◽  
Author(s):  
P. Louro ◽  
Yu. Vygranenko ◽  
M. Fernandes ◽  
M. Vieira ◽  
M. Schubert
Keyword(s):  
Optical Sensors ◽  
Carrier Transport ◽  
Energy Band Diagram ◽  
Large Area ◽  
Conduction Band Offset ◽  
Sensor Performance ◽  
Diffusion Limited ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Limited Process

AbstractA series of large area single layers and heterojunction cells in the assembly glass/ZnO:Al/p (SixC1-x:H)/i (Si:H)/n (SixC1-x:H)/Al (0<x<1) were produced by PE-CVD at low temperature. Junction properties, carrier transport and photogeneration are investigated from dark and illuminated current-voltage and capacitance-voltage characteristics. For the heterojunction cells Atypical J-V characteristics under different illumination conditions are observed leading to poor fill factors. High serial resistances around 106 Ω are also measured. These experimental results were used as a basis for the numerical simulation of the energy band diagram, and the electrical field distribution of the whole structures. Further comparison with the sensor performance gave satisfactory agreement.Results show that the conduction band offset is the most limiting parameter for the optimal collection of the photogenerated carriers. As the optical gap increases and the conductivity of the doped layers decreases, the transport mechanism changes from a drift to a diffusion-limited process.

Intermixing at the CdS/CdTe Interface and its Effect on Device Performance

1996 ◽  
Vol 426 ◽  
Author(s):  
R. G. Dhere ◽  
D. S. Albin ◽  
D. H. Rose ◽  
S. E. Asher ◽  
K. M. Jones ◽  
...  
Keyword(s):  
Heat Treatment ◽  
Substrate Temperature ◽  
Secondary Ion Mass Spectrometry ◽  
Spectral Response ◽  
Device Performance ◽  
Quality Factors ◽  
X Ray Diffraction ◽  
Current Voltage ◽  
Substrate Temperatures ◽  
Post Deposition

AbstractA study of the CdS/CdTe interface was performed on glass/SnO2/CdS/CdTe device structures. CdS layers were deposited by chemical solution growth to a thickness of 80–100 nm, and CdTe was deposited by close-spaced sublimation at substrate temperatures of 500°, 550°, and 600°C. Post-deposition CdCl2 heat treatment was performed at 400°C. Samples were analyzed by optical spectroscopy, secondary ion mass spectrometry (SIMS), spectral response, and current-voltage measurements. SIMS analysis shows that the intermixing of CdS and CdTe is a function of substrate temperature and post-deposition CdCl2 heat treatment. The degree of intermixing increases with increases in substrate temperature and the intensity of CdCl2 heat treatment. Optical analysis and X-Ray diffraction data show that the phases of CdSxTe1-x are also a function of the same parameters. Formation of a Te-rich CdSxTe1-x alloy is favored for films deposited at higher substrate temperatures. Spectral response of the devices is affected by the degree of alloying at the interface. The degree of alloying is indicated by simultaneous changes in long wavelength response (due to the formation of lower bandgap intermixed CdSxTe1-x) and the short wavelength response (due to the change in CdS thickness). Device performance is heavily influenced by alloying at the interface. With optimized intermixing, improvements in Voc, and diode quality factors are observed in the resulting devices.

Efficient Cu(In, Ga)Se2 Based Solar Cells Prepared by Electrodeposition

2003 ◽  
Vol 763 ◽  
Author(s):  
D. Guimard ◽  
N. Bodereau ◽  
J. Kurdi ◽  
J.F. Guillemoles ◽  
D. Lincot ◽  
...  
Keyword(s):  
Band Gap ◽  
Room Temperature ◽  
Open Circuit Voltage ◽  
Spectral Response ◽  
Deposition Process ◽  
Open Circuit ◽  
Response Analysis ◽  
Cell Parameters ◽  
Current Voltage ◽  
Capacitance Voltage

AbstractCuInSe2 and Cu(In, Ga)Se2 precursor layers have been prepared by electrodeposition, with morphologies suitable for device completion. These precursor films were transformed into photovoltaic quality films after thermal annealing without any post-additional vacuum deposition process. Depending on the preparation parameters annealed films with different band gaps between 1eV and 1.5 eV have been prepared. The dependence of resulting solar cell parameters has been investigated. The best efficiency achieved is about 10,2 % for a band gap of 1.45 eV. This device presents an open circuit voltage value of 740 mV, in agreement with the higher band gap value. Device characterisations (current-voltage, capacitance-voltage and spectral response analysis) have been performed. Admittance spectroscopy at room temperature indicates the presence of two acceptor traps at 0.3 and 0.43 eV from the valance band with density of the order of 2. 1017 cm-3 eV-1.

Enhanced response in InAs quantum dots in an InGaAs quantum well solar cells by anti-reflection coatings

2013 ◽  
Vol 1551 ◽  
pp. 155-161
Author(s):  
Y. F. Makableh ◽  
R. Vasan ◽  
J. C. Sarker ◽  
S. Lee ◽  
M. A. Khan ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Solar Cells ◽  
Solar Cell ◽  
Quantum Well ◽  
Spectral Response ◽  
Sol Gel ◽  
Absorption Enhancement ◽  
Inas Quantum Dots ◽  
Current Voltage ◽  
Before And After

ABSTRACTA study on light absorption enhancement of an InAs quantum dots embedded into InxGa1-xAs quantum well with GaAs as a barrier solar cells was carried out. Solar cell devices were fabricated from different structures, which were grown by using molecular beam epitaxy, with the In mole fraction (x) varied between 0 – 25 %. Poly-L-Lysine ligands and ZnO sol-gel was used to modify the surface of the solar cells and act as anti-reflection coatings. The anti-reflection characteristic of the ligands and the sol-gel were investigated by measuring the solar cell characteristics before and after the solar cells surface modifications. The current-voltage characteristics were measured of the fabricated solar cells before and after Poly-L-Lysine and ZnO coatings. A significant enhancement on the order of 40 % of the solar cells performance was observed. This type of enhancement was observed in the power conversion efficiency, spectral response measurements, and external quantum efficiency.

Engineering CuInGaSSe2 Surface Properties to Enhance Device Performance

2003 ◽  
Vol 796 ◽  
Author(s):  
Shalini Menezes ◽  
Yan Li ◽  
Sharmila J. Menezes
Keyword(s):  
Surface Defects ◽  
Lattice Mismatch ◽  
Defect Density ◽  
Dynamic Equilibrium ◽  
Spectral Response ◽  
Buffer Layers ◽  
Device Performance ◽  
Air Oxidation ◽  
Special Effect ◽  
Response Measurement

ABSTRACTThe CuInGaSSe2/CdS heterostructure interface has a special effect on the performance of an important thin film photovoltaic device. The CdS buffer layer is essential to stabilize the performance of CuInGaSSe2 based devices. It adjusts the lattice mismatch at the absorber/window interface, repairs CuInGaSSe2 surface defects and protects it from air oxidation. Unfortunately, the CdS material has many environmental issues. This paper reports an alternate chemical approach to engineer the interface defects in CuInGaSSe2 and maximize its PV output. It describes a simple processing step to manipulate the defect density. This step could potentially reduce sensitivity to the ambience, widen the surface bandgap and replace the current hazardous processes used in state-of-the-art CuInGaSSe2 modules. Photocurrent and spectral response measurement in an electrolytic medium monitor the effects of surface modification, specific metal ions and time. The CuInGaSSe2 films respond easily to a number of external stimuli with either positive or negative changes in the electro-optic properties. Strong time dependence of the photocurrent suggests a dynamic equilibrium of point defects in the CuInGaSSe2 film. The results provide new insights into the effects of stoichiometry, deposition methods and oxide formation, on the defect chemistry. They also provide directions for reconfiguring the deep defects for enhanced device performance without the need for toxic etchants or buffer layers, and the environmental hazards associated with these steps.

New Method for Improving the Electrical Characteristics of P-N Junction Diode

2011 ◽  
Vol 378-379 ◽  
pp. 606-609 ◽  
Author(s):  
Itsara Srithanachai ◽  
Surada Ueamanapong ◽  
Amporn Poyai ◽  
Surasak Niemcharoen
Keyword(s):  
Carrier Lifetime ◽  
Series Resistance ◽  
Device Performance ◽  
Electrical Characteristics ◽  
X Ray ◽  
Forward Current ◽  
Current Voltage ◽  
Capacitance Voltage ◽  
Current Voltage Characteristics ◽  
Junction Diode

This paper investigates the effect of soft X-ray irradiation various energy and times on P-N junction diodes. X-ray energy irradiated on P-N junction diode with 55 and 70 keV with various time in the range 5-50 sec. After irradiations were study on the current-voltage (I-V) characteristics and capacitance-voltage (C-V) characteristics. Leakages current after irradiated by X-ray are not change, while forward current are increase about 3 orders. The change of current-voltage characteristics can analyze by many parameter such as carrier lifetime and series resistance. Capacitance-voltage characteristics after irradiation are not change. The results show that soft X-ray technique can be improving performance of the P-N junction diodes. These techniques are importance to use for improving device performance in industry work.

Para-sexiphenyl-CdSe Nanocrystals Hybrid Light Emitting Diodes with Optimized Layer Thickness and Interfaces

2009 ◽  
Vol 1154 ◽  
Author(s):  
Clemens Simbrunner ◽  
Gerardo Hernandez-Sosa ◽  
Eugen Baumgartner ◽  
Günter Hesser ◽  
Jürgen Roither ◽  
...  
Keyword(s):  
Light Emitting Diode ◽  
Spectral Response ◽  
Cdse Nanocrystals ◽  
Device Performance ◽  
Leakage Currents ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
High Color Purity ◽  
Narrow Emission

AbstractCdSe/ZnS nanocrystals are embedded in para-sexiphenyl (p-6P) based hybrid light emitting diode devices providing red, green and blue (RGB) emission compatible to the HDTV color triangle. By structural and optical investigations the device parameters are optimized. The device performance is analyzed in respect to electrical and spectral response resulting in current-voltage characteristics with small leakage currents and low onset voltages. Furthermore the devices provide high color purity and stability which is demonstrated by their narrow emission line widths. All these results underline the ability of the presented device configuration to act as a future candidate for display applications.

scholarly journals Исследование глубоких энергетических уровней в солнечном элементе типа HIT

2018 ◽  
Vol 52 (7) ◽  
pp. 787
Author(s):  
С.П. Вихров ◽  
Н.В. Вишняков ◽  
В.В. Гудзев ◽  
А.В. Ермачихин ◽  
Д.В. Жилина ◽  
...  
Keyword(s):  
Solar Cell ◽  
Energy Level ◽  
Thin Layer ◽  
Energy Band ◽  
Deep Level ◽  
Energy Band Diagram ◽  
Voltage Characteristic ◽  
Band Diagram ◽  
Capacitance Voltage ◽  
Transient Spectroscopy

AbstractThe results of studying a HIT (heterojunction with an intrinsic thin layer) Ag/ITO/ a -Si:H( p )/ a -Si:H( i )/ c -Si( n )/ a -Si:H( i )/ a -Si:H( n ^+)/ITO/Ag solar cell by the capacitance–voltage characteristic and current deep-level relaxation transient spectroscopy methods are presented. The temperature dependence of the capacitance–voltage characteristics of the HIT structure and deep-energy-level parameters are studied. The results of comprehensive studies by the above methods are used to determine the features of the energy-band diagram of actual HIT structures.

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