Gate Oxide Integrity as Affected by Hf Last Wafer Treatments and Passivating Techniques

1993 ◽  
Vol 303 ◽  
Author(s):  
R.C. Hawthorne ◽  
R.P.S. Thakur ◽  
K. Morinville ◽  
R. Kauffman
Keyword(s):  
Defect Density ◽  
Gate Oxide ◽  
Device Performance ◽  
Primary Process ◽  
Chemical Treatments ◽  
The Past ◽  
Performance Requirements ◽  
Wafer Cleaning ◽  
Processing Data ◽  
Wafer Surfaces

ABSTRACTAs device performance requirements increase, device features become smaller and films become thinner. The resultant sensitivity to defect density is such that controlling the condition of wafer surfaces prior to primary process steps becomes more and more critical. Wafer cleaning technologies of the past may not be optimum in providing needed device characteristics and reliability of tomorrow's semiconductors. In this paper, we compare the currently used RCA wafer clean chemistries to newer HF last, vapor dry technologies which use direct displacement of liquids to minimize contaminants. Subsequent passivation of these hydrophobic wafer surfaces is accomplished by various methods of oxidation including chemical treatments and RTP processing. Data collected from I-V, SIMS and DEFECT DENSITY testing will be included in the presentation.

A New Failure Analysis Flow of Gate Oxide Integrity Failure in Wafer Fabrication

2009 ◽  
Author(s):  
Hua Younan ◽  
Chu Susan ◽  
Gui Dong ◽  
Mo Zhiqiang ◽  
Xing Zhenxiang ◽  
...  
Keyword(s):  
Failure Analysis ◽  
Gate Dielectric ◽  
Dielectric Breakdown ◽  
Defect Density ◽  
Gate Oxide ◽  
Oxide Thickness ◽  
Fault Isolation ◽  
Wafer Fabrication ◽  
Root Cause ◽  
Gate Oxide Integrity

Abstract As device feature size continues to shrink, the reducing gate oxide thickness puts more stringent requirements on gate dielectric quality in terms of defect density and contamination concentration. As a result, analyzing gate oxide integrity and dielectric breakdown failures during wafer fabrication becomes more difficult. Using a traditional FA flow and methods some defects were observed after electrical fault isolation using emission microscopic tools such as EMMI and TIVA. Even with some success with conventional FA the root cause was unclear. In this paper, we will propose an analysis flow for GOI failures to improve FA’s success rate. In this new proposed flow both a chemical method, Wright Etch, and SIMS analysis techniques are employed to identify root cause of the GOI failures after EFA fault isolation. In general, the shape of the defect might provide information as to the root cause of the GOI failure, whether related to PID or contamination. However, Wright Etch results are inadequate to answer the questions of whether the failure is caused by contamination or not. If there is a contaminate another technique is required to determine what the contaminant is and where it comes from. If the failure is confirmed to be due to contamination, SIMS is used to further determine the contamination source at the ppm-ppb level. In this paper, a real case of GOI failure will be discussed and presented. Using the new failure analysis flow, the root cause was identified to be iron contamination introduced from a worn out part made of stainless steel.

Methods in Year 50: Preserving the Past and Preparing for the Future

2011 ◽  
Vol 50 (01) ◽  
pp. 1-6 ◽  
Author(s):  
D. Aronsky ◽  
T. Y. Leong ◽  
A. T. McCray ◽  
R. Haux
Keyword(s):  
Medical Informatics ◽  
Strategic Decisions ◽  
Major Focus ◽  
Editorial Policies ◽  
The Past ◽  
Processing Data ◽  
Online Access ◽  
Aims And Scope ◽  
Online Methods ◽  
Sixth Decade

Summary Background: Founded in 1962 and, therefore, the oldest international journal in medical informatics, Methods of Information in Medicine will publish its 50th volume in 2011. At the start of the journal’s sixth decade, a discussion on the journal’s profile seems appropriate. Objectives: To report on the new opportunities for online access to Methods publications as well as on the recent strategic decisions regarding the journal‘s aims and editorial policies. Methods: Describing and analyzing the journal’s aims and scope. Reflecting on recent publications and on the journal’s development during the last decade. Results: From 2011 forward all articles of Methods from 1962 until the present can be accessed online. Methods of Information in Medicine stresses the basic methodology and scientific fundamentals of processing data, information and knowledge in medicine and health care. Although the journal‘s major focus is on publications in medical informatics, it has never been restricted to publications only in this discipline. For example, articles in medical biometry, in or close to biomedical engineering, and, later, articles in bioinformatics continue to be a part of this journal. Conclusions: There is a continuous and, as it seems, ever growing overlap in the research methodology and application areas of the mentioned disciplines. As there is a continuing and even growing need for such a publication forum, Methods of Information in Medicine will keep its broad scope. As an organizational consequence, the journal’s number of associate editors has increased accordingly.

Hydrogen Concentration Analysis in Pecvd and Rtcvd Silicon Nitride Thin Films and It's Impact on Device Performance

2001 ◽  
Vol 664 ◽  
Author(s):  
C. Y. Wang ◽  
E. H. Lim ◽  
H. Liu ◽  
J. L. Sudijono ◽  
T. C. Ang ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Threshold Voltage ◽  
Vapor Deposition ◽  
Gas Flow ◽  
Chemical Vapor ◽  
Gate Oxide ◽  
Nitride Film ◽  
Device Performance ◽  
Gas Flow Ratio ◽  
The Impact

ABSTRACTIn this paper the impact of the ESL (Etch Stop layer) nitride on the device performance especially the threshold voltage (Vt) has been studied. From SIMS analysis, it is found that different nitride gives different H concentration, [H] in the Gate oxide area, the higher [H] in the nitride film, the higher H in the Gate Oxide area and the lower the threshold voltage. It is also found that using TiSi instead of CoSi can help to stop the H from diffusing into Gate Oxide/channel area, resulting in a smaller threshold voltage drift for the device employed TiSi. Study to control the [H] in the nitride film is also carried out. In this paper, RBS, HFS and FTIR are used to analyze the composition changes of the SiN films prepared using Plasma enhanced Chemical Vapor deposition (PECVD), Rapid Thermal Chemical Vapor Deposition (RTCVD) with different process parameters. Gas flow ratio, RF power and temperature are found to be the key factors that affect the composition and the H concentration in the film. It is found that the nearer the SiN composition to stoichiometric Si3N4, the lower the [H] in SiN film because there is no excess silicon or nitrogen to be bonded with H. However the lowest [H] in the SiN film is limited by temperature. The higher the process temperature the lower the [H] can be obtained in the SiN film and the nearer the composition to stoichiometric Si3N4.

SiC Semiconductor Applications - An Air Force Perspective

1996 ◽  
Vol 423 ◽  
Author(s):  
L. S. Rea
Keyword(s):  
Air Force ◽  
Device Performance ◽  
Full Potential ◽  
Materials Development ◽  
Device Development ◽  
Performance Requirements ◽  
Wide Range ◽  
The Status ◽  
Performance Results ◽  
High Temperature Electronic

AbstractThe Department of Defense (DoD) is investing in the development of Silicon Carbide (SiC) for a wide range of applications. Over the past year, SiC technology has demonstrated excellent device performance results for power devices, high temperature electronic devices and microwave devices. The materials growth and processing technology for SiC is now at a level of sufficient maturity to support substantial device development efforts. While there is still considerable materials and device research required for SiC to achieve it's full potential, the fundamental technology has been proven for several critical applications. A perspective on some Air Force device performance requirements will be presented. The status of SiC materials development, material limits to advances in device performance and issues relating to supporting technology will also be discussed.

Attainment of Stable (FTO/ZnO/CdS/CH3NH3SnI3/GaAs/Au) Perovskite Solar Cell With Above 23% Photovoltaic Performance Using Solar Capacitance Simulator

2021 ◽  
Author(s):  
Irfan Qasim ◽  
Owais Ahmad ◽  
Asim Rashid ◽  
Tashfeen Zehra ◽  
Muhammad Imran Malik ◽  
...  
Keyword(s):  
Solar Cells ◽  
Defect Density ◽  
Short Circuit ◽  
Photovoltaic Performance ◽  
Hole Transport ◽  
Transport Layer ◽  
Buffer Layers ◽  
Electron Transport Layer ◽  
Device Performance ◽  
Highly Efficient

Abstract Solar energy is found to be low cost and abundant of all available energy resources and needs exploration of highly efficient devices for global energy requirements. We have investigated methyl ammonium tin halide (CH3NH3SnI3)-based perovskite solar cells (PSCs) for optimized device performance using solar capacitance simulator SCAPS-1D software. This study is a step forward towards availability of stable and non-toxic solar cells. We explored all necessary parameters such as metal work functions, thickness of absorber and buffer layers, charge carrier’s mobility and defect density for improved device performance. Calculations revealed that for the best efficiency of device the maximum thickness of the perovskite absorber layer must be 4.2 μm. Furthermore, optimized thickness values of (ZnO=0.01 μm) as electron transport layer (ETL), GaAs as hole transport layer (HTL=3.02 μm) and (CdS=10 nm) and buffer layer have provided power conversion efficiency (PCE) of 23.53%. Variation of open circuit voltage (Voc), Short circuit current (Jsc), Fill Factor (FF%) and quantum efficiency against thickness of all layers in FTO/ZnO/CdS/CH3NH3SnI3/GaAs/Au compositions have been critically explored and reported. Interface defects and defect density in different inserted layers have also been reported in this study as they can play a crucial for the device performance. Insertion of ZnO layer and CdS buffer layers have shown improved device performance and PCE. Current investigations may prove to be useful for designing and fabrication of climate friendly, non-toxic and highly efficient solar cells.

Influence of Insecticides and Reflective Mulch on Watermelon Vine Decline Caused by Squash vein yellowing virus (SqVYV)

2015 ◽  
Vol 16 (1) ◽  
pp. 43-49 ◽  
Author(s):  
Chandrasekar S. Kousik ◽  
Scott Adkins ◽  
Craig G. Webster ◽  
William W. Turechek ◽  
Philip Stansly ◽  
...  
Keyword(s):  
Fruit Quality ◽  
Significant Interaction ◽  
Limiting Factor ◽  
Plastic Mulch ◽  
Central Florida ◽  
Chemical Treatments ◽  
The Past ◽  
Growing Seasons ◽  
Vine Decline ◽  
Yellowing Virus

Watermelon vine decline (WVD) caused by the whitefly-transmitted Squash vein yellowing virus (SqVYV) has been a serious limiting factor in watermelon production in southwest and west-central Florida over the past few years. Symptoms of WVD typically appear as sudden decline of vines a few weeks before harvest or just after the first harvest. Fruit symptoms include rind necrosis and flesh discoloration that affects fruit quality and marketability. The combination of insecticide treatments consisting of an imidacloprid drench (Admire Pro, 560 ml/ha) at transplanting followed by two foliar applications of spiromesifen (Oberon, 2SC, 490 ml/ha) and reflective plastic mulch was evaluated for management of WVD during fall growing seasons of 2006, 2007, and 2009. Virus inoculum source was introduced by planting SqVYV-infected squash plants at the ends of each plot. In all three experiments, the insecticide-treated plots had significantly lower levels of WVD on foliage and fruit compared to non-treated plots. In 2007, the reflective plastic mulch was effective in reducing foliar WVD compared to non-reflective mulch, but not in 2006 and 2009. No significant interaction between plastic mulch and chemical treatments was observed on WVD development on foliage or fruit. Our results suggest that application of insecticides for managing whiteflies can help manage SqVYV-caused WVD. Accepted for publication 13 January 2015. Published 25 March 2015.

scholarly journals Low Dark Current and Performance Enhanced Perovskite Photodetector by Graphene Oxide as an Interfacial Layer

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 190
Author(s):  
Ali Hassan ◽  
Muhammad Azam ◽  
Yeong Hwan Ahn ◽  
Muhammad Zubair ◽  
Yu Cao ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Dark Current ◽  
High Performance ◽  
Carrier Transport ◽  
Defect Density ◽  
Low Cost ◽  
Degradation Process ◽  
Device Performance ◽  
Interface Engineering ◽  
Defect Passivation

Organic–inorganic hybrid perovskite photodetectors are gaining much interest recently for their high performance in photodetection, due to excellent light absorption, low cost, and ease of fabrication. Lower defect density and large grain size are always favorable for efficient and stable devices. Herein, we applied the interface engineering technique for hybrid trilayer (TiO2/graphene oxide/perovskite) photodetector to attain better crystallinity and defect passivation. The graphene oxide (GO) sandwich layer has been introduced in the perovskite photodetector for improved crystallization, better charge extraction, low dark current, and enhanced carrier lifetime. Moreover, the trilayer photodetector exhibits improved device performance with a high on/off ratio of 1.3 × 104, high responsivity of 3.38 AW−1, and low dark current of 1.55 × 10−11 A. The insertion of the GO layer also suppressed the perovskite degradation process and consequently improved the device stability. The current study focuses on the significance of interface engineering to boost device performance by improving interfacial defect passivation and better carrier transport.

Performance Improvement of Trench-Gate SiC MOSFETs by Localized High-Concentration N-Type Ion Implantation

2020 ◽  
Vol 1004 ◽  
pp. 770-775
Author(s):  
Rina Tanaka ◽  
Katsutoshi Sugawara ◽  
Yutaka Fukui ◽  
Hideyuki Hatta ◽  
Hidenori Koketsu ◽  
...  
Keyword(s):  
Performance Improvement ◽  
Short Circuit ◽  
Effective Means ◽  
Gate Oxide ◽  
Device Performance ◽  
High Concentration ◽  
Safe Operation ◽  
Major Drawback ◽  
Oxide Reliability ◽  
Conventional Device

Gate oxide reliability of a trench-gate SiC MOSFET can be improved by incorporating a gate protection structure, but the resulting parasitic JFET resistance is one major drawback. For reduction of on-resistance, a new method of localized high-concentration n-type doping in JFET regions (JD) is developed. Utilizing process and device simulation by TCAD, the optimal condition of JD that enables maximum device performance is derived. By fabricating a device with the optimal JD structure, the on-resistance is successfully reduced by 25% compared to a conventional device without JD, while maintaining the withstand voltage and the gate oxide electric field at the same level. As a result, a device exhibiting a specific on-resistance of 1.84 mΩcm2 and a breakdown voltage of 1560 V is obtained. The optimal JD structure maintains the short-circuit safe operation area comparable to that for the structure without JD. Thus, by reducing the JFET resistance while minimizing effects on other characteristics, localized JD is shown to be an effective means of realizing a reliable, low-resistance SiC power device.

Simulation of a-Si:H Color Sensors for Application in Intelligent Sensor Systems

1993 ◽  
Vol 297 ◽  
Author(s):  
H. Stiebig ◽  
M. BÖhm
Keyword(s):  
Defect Density ◽  
Major Influence ◽  
Device Performance ◽  
Response Curves ◽  
Intelligent Sensor ◽  
Current Voltage ◽  
Color Sensors ◽  
Current Densities ◽  
Silicon Based ◽  
Simulation Point

Amorphous silicon based n-i-p-i-n structures may be used as color detectors. A simulation program has been developed which allows the examination of the spatial distribution of carrier concentrations, electric field and current densities under different illumination conditions. Furthermore current/voltage- and monochromatic response curves are presented. The results of the simulation point out that the defect density in the p-layer has a major influence on device performance.

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