scholarly journals Numerical Design of Ultrathin Hydrogenated Amorphous Silicon-Based Solar Cell

2021 ◽  
Vol 2021 ◽  
pp. 1-13
Author(s):  
F. X. Abomo Abega ◽  
A. Teyou Ngoupo ◽  
J. M. B. Ndjaka
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Buffer Layer ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Theoretical Work ◽  
Silicon Based ◽  
The Impact ◽  
Hydrogenated Amorphous

Numerical modelling is used to confirm experimental and theoretical work. The aim of this work is to present how to simulate ultrathin hydrogenated amorphous silicon- (a-Si:H-) based solar cells with a ITO BRL in their architectures. The results obtained in this study come from SCAPS-1D software. In the first step, the comparison between the J-V characteristics of simulation and experiment of the ultrathin a-Si:H-based solar cell is in agreement. Secondly, to explore the impact of certain properties of the solar cell, investigations focus on the study of the influence of the intrinsic layer and the buffer layer/absorber interface on the electrical parameters ( J SC , V OC , FF, and η ). The increase of the intrinsic layer thickness improves performance, while the bulk defect density of the intrinsic layer and the surface defect density of the buffer layer/ i -(a-Si:H) interface, respectively, in the ranges [109 cm-3, 1015 cm-3] and [1010 cm-2, 5 × 10 13  cm-2], do not affect the performance of the ultrathin a-Si:H-based solar cell. Analysis also shows that with approximately 1 μm thickness of the intrinsic layer, the optimum conversion efficiency is 12.71% ( J SC = 18.95   mA · c m − 2 , V OC = 0.973   V , and FF = 68.95 % ). This work presents a contribution to improving the performance of a-Si-based solar cells.

Hydrogenated Amorphous Silicon Based Solar Cells: Optimization Formalism and Numerical Algorithm

2009 ◽  
Vol 1153 ◽  
Author(s):  
Anatoli Shkrebtii ◽  
Yuriy Kryuchenko ◽  
Anaroliy Sachenko ◽  
Igor Sokolovskyi ◽  
Franco Gaspari
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Amorphous Film ◽  
Solar Cell Performance ◽  
Transparent Conducting ◽  
Silicon Based ◽  
Hydrogenated Amorphous

AbstractThin film hydrogenated amorphous silicon (a-Si:H) is widely used in photovoltaics. In order to get the best possible performance of the a-Si:H solar cells it is important to optimize the amorphous film and solar cells in terms their parameters such as mobility gap, p-, i- and n-layer doping levels, electron and hole lifetime and their mobilities, resistance of p-, i- and n-layers, contact grid geometry and parameters of the transparent conducting and antireflecting layers, and others. To maximize thin a-Si:H film based solar cell performance we have developed a general numerical formalism of photoconversion, which takes into account all the above parameters for the optimization. Application of the formalism is demonstrated for typical a-Si:H based solar cells before Staebler-Wronski (SW) light soaking effect. This general formalism is not limited to a-Si:H based systems only, and it can be applied to other types of solar cells as well.

Defect Density Profiling in Light-Soaked and Annealed Hydrogenated Amorphous Silicon Solar Cells

2001 ◽  
Vol 664 ◽  
Author(s):  
Richard S. Crandall ◽  
Jeffrey Yang ◽  
Subhendu Guha
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Central Region ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Solar Cells ◽  
Solar Cell Efficiency ◽  
Cell Efficiency ◽  
Hydrogenated Amorphous

ABSTRACTThe fundamental ingredient lacking in solar cell modeling is the spatial distribution of defects. To gain this information, we use drive-level capacitance profiling (DLCP) on hydrogenated amorphous silicon solar cells. We find the following: Near the p-i interface the defect density is high, decreasing rapidly into the interior, reaching low values in the central region of the cell, and rising rapidly again at the n-i interface. The states in the central region are neutral dangling-bond defects whose density agrees with those typically found in similar films. However, those near the interfaces with the doped layers are charged dangling bonds in agreement with the predictions of defect thermodynamics. We correlate the changes in solar cell efficiency owing to intense illumination with changes in the defect density throughout the cell. Defects in the central region of the cell increase to values typically found in companion films. We describe the measurements and interpretation of DLCP for solar cells with the aid of a solar cell simulation.

Hydrogenated amorphous silicon–germanium thin films with a narrow band gap for silicon-based solar cells

2011 ◽  
Vol 11 (1) ◽  
pp. S50-S53 ◽  
Author(s):  
Chao-Chun Wang ◽  
Chueh-Yang Liu ◽  
Shui-Yang Lien ◽  
Ko-Wei Weng ◽  
Jung-Jie Huang ◽  
...  
Keyword(s):  
Thin Films ◽  
Solar Cells ◽  
Amorphous Silicon ◽  
Band Gap ◽  
Silicon Germanium ◽  
Narrow Band ◽  
Hydrogenated Amorphous Silicon ◽  
Silicon Based ◽  
Amorphous Silicon Germanium ◽  
Hydrogenated Amorphous

Improved Stability of Hydrogenated Amorphous Silicon Solar Cells Fabricated by Triode-Plasma CVD

2005 ◽  
Vol 862 ◽  
Author(s):  
H. Sonobe ◽  
A. Sato ◽  
T. Fujibayashi ◽  
S. Shimizu ◽  
T. Matsui ◽  
...  
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
Hydrogenated Amorphous Silicon ◽  
Plasma Cvd ◽  
Plate Electrode ◽  
Bond Density ◽  
Degradation Ratio ◽  
Improved Stability ◽  
Hydrogenated Amorphous

AbstractWe have employed a triode-type plasma CVD system to fabricate highly stabilized hydrogenated amorphous silicon (a-Si:H) solar cells. The p-i-n type solar cells were fabricated on a textured SnO2/glass substrate (ASAHI VU type). By applying a triode system, the Si-H2 bond density in the film decreased to about one third (from 1.7 at.% for conventional parallel-plate-electrode to 0.6 at.% for a triode configuration), and correspondingly the degradation ratio decreased from 13 % to 10 %. We have achieved the degradation ratio of 5 % by optimizing the player deposition conditions. In case of a triode system, there were minor effects of higher hydrogen dilution in the stabilized efficiency. We have experimented the effects of the substrate temperature for a higher stabilized efficiency. Further improvement in solar efficiency has been made by applying antireflection layers to air/glass and TCO/p interfaces. As a result, we have achieved the stabilized efficiency of 9.22 % (Jsc = 15.9 mA/cm2, Voc = 0.863 V, FF = 0.672) with a degradation ratio of 7.8 %. We have also employed the triode-deposited a-Si:H solar cell to a tandem type solar cell with a structure of a-Si:H/hydrogenated microcrystalline silicon (μc-Si:H). We have achieved the stabilized efficiency of 10.9 % (Jsc = 12.0 mA/cm2, Voc = 1.31 V, FF = 0.691) with a degradation ratio of 7.3 %.

scholarly journals Integration of Expanding Thermal Plasma deposited Hydrogenated Amorphous Silicon in Solar Cells

2002 ◽  
Vol 715 ◽  
Author(s):  
B.A. Korevaar ◽  
C. Smit ◽  
A.M.H.N. Petit ◽  
R.A.C.M.M. van Swaaij ◽  
M.C.M. van de Sanden
Keyword(s):  
Amorphous Silicon ◽  
Buffer Layer ◽  
Thermal Plasma ◽  
Growth Rates ◽  
Fill Factor ◽  
Defect Density ◽  
Hydrogenated Amorphous Silicon ◽  
Temperature Limit ◽  
Cell Efficiency ◽  
Hydrogenated Amorphous

AbstractA cascaded arc expanding thermal plasma is used to deposit intrinsic hydrogenated amorphous silicon at growth rates between 0.2 and 3 nm/s. Incorporation into a single junction p-i-n solar cell resulted in an initial efficiency of 6.7%, whereas all the optical and initial electrical properties of the individual layers are comparable with RF-PECVD deposited films. In this cell the intrinsic layer was deposited at 0.85 nm/s and at a deposition temperature of 250°C, which is the temperature limit for growing the p-i-n sequence. The cell efficiency is limited by the fill factor and using a buffer layer at the p-i interface deposited with RF-PECVD at low growth rate can increase this. The increase in fill factor is a result of a lower initial defect density near the p-i interface then obtained with the expanding thermal plasma, resulting in better charge carrier collection. To use larger growth rates, while maintaining the material properties, higher deposition temperatures are required. Higher deposition temperatures result in a smaller optical bandgap for the intrinsic layer and deterioration of the p-type layer, resulting in a lower opencircuit voltage. First results on applying a buffer layer will also be presented.

Buffer Layers for Narrow Bandgap A-SIGE Solar Cells

1999 ◽  
Vol 557 ◽  
Author(s):  
X. B. Liao ◽  
J. Walker ◽  
X. Deng
Keyword(s):  
Solar Cells ◽  
Solar Cell ◽  
Amorphous Silicon ◽  
High Efficiency ◽  
Hydrogenated Amorphous Silicon ◽  
Absorber Layer ◽  
Buffer Layers ◽  
Narrow Bandgap ◽  
Interface Layers ◽  
Hydrogenated Amorphous

AbstractIn high efficiency narrow bandgap (NBG) a-SiGe solar cells, thin buffer layers of unalloyed hydrogenated amorphous silicon (a-Si) are usually used at the interfaces between the a-SiGe intrinsic layer and the doped layers. We investigated the effect of inserting additional a-SiGe interface layers between these a-Si buffer layers and the a-SiGe absorber layer. We found that such additional interface layers increase solar cell VOC and FF sizably, most likely due to the reduction or elimination of the abrupt bandgap discontinuity between the a-SiGe absorber layer and the a-Si buffer layers. With these improved narrow bandgap solar cells incorporated into the fabrication of triple-junction a-Si based solar cells, we obtained triple cells with initial efficiency of 10.6%.

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