Effects of Additive Elements on Electrical Properties of Tantalum Oxide Films.

1995 ◽  
Vol 378 ◽  
Author(s):  
Hisayoshi Fujikawa ◽  
Yasunori Taga
Keyword(s):  
Electrical Properties ◽  
Conduction Mechanism ◽  
Defect Density ◽  
Tantalum Oxide ◽  
Composite Films ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Electrical Conduction Mechanisms ◽  
Insulating Properties ◽  
Nordheim Tunneling

AbstractTa2O5-based composite films prepared by magnetron sputtering have been investigated with respect to their dielectric properties. As additive third oxides, Y2O3 and WO3 were found to be effective in improving insulating properties without decreasing their dielectric constant. Furthermore, electrical properties of Ta2O5-Y2O3 films were investigated by measuring the current-voltage characteristics in the temperature range from 100 to 330 K. Measurement of temperature dependence of the leakage current revealed that the conduction mechanism at RT changed from the Poole-Frenkel type to the Fowler-Nordheim tunneling type by adding Y2O3 into Ta2O5. Based on the detailed analysis of the results, it is concluded that the addition of Y2O3 into the Ta2O5 film is effective in the reduction of defect density without high-temperature annealing and the alteration of electrical conduction mechanisms of the films.

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

scholarly journals Светоизлучающие полевые транзисторы на основе композитных пленок полифлуорена и нанокристаллов CsPbBr-=SUB=-3-=/SUB=-

2019 ◽  
Vol 61 (2) ◽  
pp. 388
Author(s):  
А.Н. Алешин ◽  
И.П. Щербаков ◽  
Д.А. Кириленко ◽  
Л.Б. Матюшкин ◽  
В.А. Мошников
Keyword(s):  
Field Effect Transistors ◽  
Composite Films ◽  
Hole Mobility ◽  
Hole Transport ◽  
Component Ratio ◽  
Organic Field Effect Transistors ◽  
Electrical And Optical Properties ◽  
Light Emitting ◽  
Current Voltage ◽  
Current Voltage Characteristics

Abstract—Light-emitting organic field-effect transistors (LE-FETs) on the basis of composite films that consist of perovskite nanocrystals (CsPbBr_3) embedded in a matrix of conjugated polymer—polyfluorene (PFO)—have been obtained, and their electrical and optical properties have been investigated. Output and transfer current-voltage characteristics (I-Vs) of FETs based on PFO : CsPbBr_3 films (component ratio 1 : 1) have a slight hysteresis at temperatures of 100–300 K and are characteristic of hole transport. The hole mobility is ∼3.3 and ∼1.9 cm^2/(V s) at the modes of the saturation and low fields, respectively, at 250 K and reaches ∼5 cm^2/(V s) at 100 K. It has been shown that the application of pulsed voltage to LE-FETs based on PFO : CsPbBr_3 can reduce the ionic conductivity and provide electroluminescence in this structure at 300 K.

Azido bridged binuclear copper(ii) Schiff base compound: synthesis, structure and electrical properties

2019 ◽  
Vol 43 (41) ◽  
pp. 16255-16263
Author(s):  
Mrinmoy Ghosh ◽  
Sandip Saha ◽  
Abhijit Banerjee ◽  
Dieter Schollmeyer ◽  
Ananda Sarkar ◽  
...  
Keyword(s):  
Schiff Base ◽  
Electrical Properties ◽  
Binuclear Copper ◽  
Current Voltage ◽  
Compound Synthesis ◽  
Current Voltage Characteristics ◽  
Schiff Base Compound ◽  
Base Compound

The structure, FESEM, Al/complex/ITO microstructure and the current–voltage characteristics of the copper(ii) azido bridged dimer.

Effect of WO3 Doping on Microstructural and Electrical Properties of ZnO-Pr6O11 Based Varistor Materials

2013 ◽  
Vol 591 ◽  
pp. 54-60
Author(s):  
Xiu Li Fu ◽  
Yan Xu Zang ◽  
Zhi Jian Peng
Keyword(s):  
Grain Size ◽  
Electrical Properties ◽  
Grain Growth ◽  
Doping Level ◽  
Nonlinear Coefficient ◽  
Current Voltage ◽  
Average Grain Size ◽  
Current Voltage Characteristics ◽  
Voltage Performance

The effect of WO3doping on microstructural and electrical properties of ZnO-Pr6O11based varistor materials was investigated. The doped WO3plays a role of inhibitor in ZnO grain growth, resulting in decreased average grain size from 2.68 to 1.68 μm with increasing doping level of WO3from 0 to 0.5 mol%. When the doping level of WO3was lower than 0.05 mol%, the nonlinear current-voltage characteristics of the obtained varistors could be improved significantly with increasing amount of WO3doped. But when the doping level of WO3became higher, their nonlinear current-voltage performance would be dramatically deteriorated when more WO3was doped. The optimum nonlinear coefficient, varistor voltage, and leakage current of the samples were about 13.71, 710 V/mm and 13 μA/cm2, respectively, when the doping level of WO3was in the range from 0.03 to 0.05 mol%.

Effect of Fe2O3 Dopant on Electronic Densities and Electrical Properties of ZnO-Based Varistors

2011 ◽  
Vol 415-417 ◽  
pp. 1042-1045
Author(s):  
Wen Deng ◽  
Zhen Quan Lei ◽  
Jiao Ling Zhao ◽  
Yan Qiong Lu ◽  
Ding Kang Xiong
Keyword(s):  
Electrical Properties ◽  
Positron Lifetime ◽  
Nonlinear Coefficient ◽  
Doppler Broadening ◽  
Donor Concentration ◽  
Current Voltage ◽  
Electronic Densities ◽  
Current Voltage Characteristics ◽  
Doppler Broadening Spectra ◽  
Coincidence Doppler Broadening

The effect of the Fe2O3dopant on the electronic densities and the electrical properties has been studied in a ZnO-Bi2O3-SnO2-Co2O3-MnO2-TiO2-Ni2O3-Fe2O3system by the measurements of positron lifetime spectra, coincidence Doppler broadening spectra and current-voltage characteristics. The results show that the 3d electron signal in the spectrum of the varistor increases with the Fe2O3content. The addition of small amount of Fe2O3into the ZnO-based varistor leads to an increase in the donor concentration in the bulk and the defects in the varistor. As the Fe2O3content increased, the threshold voltage (VT) and the nonlinear coefficient (α) of the varistor decreased monotonously.

Electrical Characterization of the Grain-Boundary Region of SnO2 Varistors

2006 ◽  
Vol 518 ◽  
pp. 235-240 ◽  
Author(s):  
M. Žunić ◽  
Z. Branković ◽  
G. Branković ◽  
D. Poleti
Keyword(s):  
Electrical Properties ◽  
Grain Boundary ◽  
Electric Fields ◽  
Electrical Characterization ◽  
Boundary Region ◽  
Current Voltage ◽  
Schottky Type ◽  
Boundary Properties ◽  
Current Voltage Characteristics

The effect of Co, Cr and Nb on the electrical properties of the grain boundaries of SnO2-based varistors was investigated. The powders were prepared by the method of evaporation and decomposition of solutions and suspensions. Varistor samples were obtained by uniaxial pressing followed by sintering at 1300 °C for 1h. The electrical properties of the grain-boundary region, such as resistance (R) and capacitance (C), were determined using ac impedance spectroscopy in the 27-330 °C temperature interval. Activation energies for conduction (EA) were calculated from the Arrhenius equation. The non-linear coefficients (α) and the breakdown electric fields (Eb) of the samples were determined from the current-voltage characteristics. The potential barrier height (Φb) was calculated using the Schottky-type conducting model. After a comparison of the characteristic parameters for different varistor compositions it was found that the Cr/Nb ratio has a crucial influence on the grain-boundary properties in SnO2 varistors.

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