Interaction of Atonic Hydrogen with Ion Bombardment Induced Defects at Si/SiO2 Interfaces

1992 ◽  
Vol 284 ◽  
Author(s):  
S. Kar ◽  
S. Ashok
Keyword(s):  
Metal Oxide ◽  
Ion Bombardment ◽  
Interfacial Region ◽  
Hydrogen Ions ◽  
Electrical Measurements ◽  
Metal Oxide Silicon ◽  
Induced Defects ◽  
Mos Structures

ABSTRACTElectrically active traps were induced in the Si-SiO2 interfacial region by silicon ion bombardment. A Kaufman source was used to introduce 400 eV hydrogen ions into the oxide and the interface. The interaction of the hydrogen species with the traps was monitored by a comprehensive set of electrical measurements of the metal-oxide-silicon [MOS] structures.

Deep Level Transient Spectroscopy of Defects Induced by the Combination of CF4 Reactive Ion Etching and Oxidation in Metal-Oxide-Silicon Capacitors.

1989 ◽  
Vol 148 ◽  
Author(s):  
Dominique Vuillaume ◽  
Jeff P. Gambino
Keyword(s):  
Metal Oxide ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Reactive Ion Etching ◽  
Interface States ◽  
Ion Etching ◽  
Mos Capacitors ◽  
Metal Oxide Silicon ◽  
Transient Spectroscopy ◽  
Induced Defects

ABSTRACTMetal-Oxide-silicon (MOS) capacitors have been fabricated on CFb reactive ion etched silicon (n and p types) in order to study the defects at the Si-Si02 interface and in the bulk of the substrate, produced by the combination of reactive ion etching (RIE) and oxidation. Bulk defects and fast interface states are analysed by Deep Level Transient Spectroscopy (DLTS) and the slow interface states in the oxide layer near the interface are probed by Tunnel-DLTS. A density of fast interface states in the range 1010-1011 cm−2 eV−1 is observed for capacitors (both n and p types) fabricated with either dry or wet oxidations, and is probably due to disrupted or strained bonds at the Si-SiO2 interface. The observation of bulk defects in the wet-RIE oxide samples but not in the dry-RIE oxide samples may be related to the shorter oxidation time for wet oxides (31mn) compared to dry oxides(190mn) and explained by a greater annealing of RIE induced defects during the dry oxidation. The bulk traps are identified to be related to carbon contamination, in SiC form, introduced during RIE. Finally, an increase of the slow interface states density is observed for the n-type dry oxide samples.

Tunnel DCIV diagnosis of ultrathin gate oxide metal-oxide-silicon transistors

2004 ◽  
Vol 19 (7) ◽  
pp. 870-876 ◽  
Author(s):  
Bin B Jie ◽  
K F Lo ◽  
Elgin Quek ◽  
Sanford Chu ◽  
Chih-Tang Sah
Keyword(s):  
Metal Oxide ◽  
Gate Oxide ◽  
Silicon Transistors ◽  
Metal Oxide Silicon

scholarly journals Synthesis and Characterization of Mixed Metal Oxide Nanocomposite Energetic Materials

2003 ◽  
Vol 800 ◽  
Author(s):  
Brady J. Clapsaddle ◽  
Lihua Zhao ◽  
Alex E. Gash ◽  
Joe H. Satcher ◽  
Kenneth J. Shea ◽  
...  
Keyword(s):  
Mass Transport ◽  
Metal Oxide ◽  
Energetic Materials ◽  
Silicon Oxide ◽  
Sol Gel ◽  
Synthesis And Characterization ◽  
Mixed Metal Oxide ◽  
Organic Additives ◽  
Metal Oxide Silicon

ABSTRACTIn the field of composite energetic materials, properties such as ingredient distribution, particle size, and morphology, affect both sensitivity and performance. Since the reaction kinetics of composite energetic materials are typically controlled by the mass transport rates between reactants, one would anticipate new and potentially exceptional performance from energetic nanocomposites. We have developed a new method of making nanostructured energetic materials, specifically explosives, propellants, and pyrotechnics, using sol-gel chemistry. A novel sol-gel approach has proven successful in preparing metal oxide/silicon oxide nanocomposites in which the metal oxide is the major component. Two of the metal oxides are tungsten trioxide and iron(III) oxide, both of which are of interest in the field of energetic materials. Furthermore, due to the large availability of organically functionalized silanes, the silicon oxide phase can be used as a unique way of introducing organic additives into the bulk metal oxide materials. As a result, the desired organic functionality is well dispersed throughout the composite material on the nanoscale. By introducing a fuel metal into the metal oxide/silicon oxide matrix, energetic materials based on thermite reactions can be fabricated. The resulting nanoscale distribution of all the ingredients displays energetic properties not seen in its microscale counterparts due to the expected increase of mass transport rates between the reactants. The synthesis and characterization of these metal oxide/silicon oxide nanocomposites and their performance as energetic materials will be discussed.

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