Surface Reaction Mechanisms Governing the Selective Area Growth of III-V Compound Semiconductors by Chemical Beam Epitaxy

1992 ◽  
Vol 282 ◽  
Author(s):  
G J Davies ◽  
P J Skevington ◽  
C L Levoguer ◽  
C L French ◽  
J S Foord
Keyword(s):  
Reaction Mechanisms ◽  
Surface Reaction ◽  
Sticking Probability ◽  
Chemical Beam Epitaxy ◽  
Adsorbed Species ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Adsorbed Phase ◽  
Underlying Mechanisms ◽  
Insight Into

ABSTRACTPrevious studies have helped elucidate the underlying mechanisms for selective area epitaxy in chemical beam epitaxy by investigating the reactions of triethylgallium (TEG) on a silicon nitride surface. However no explanation was produced as to why selective growth is lost at low temperatures or high Gp V beam fluxes. This question is addressed in this paper which examines the interaction between TEG and As2 on the silicon nitridesurface. In the absence of arsenic, TEG adsorbs with a low sticking probability on the dielectric. Adsorbed species mainly desorb rather than decompose, and any Ga produced on the surface becomes converted to a nitride form; no free Ga is produced hence GaAs growth cannot occur. Arsenic is found to form a weakly adsorbed phase on the nitride surface. Reaction with co-adsorbed TEG results in the formation of GaAs. Adsorbed As also is efficient in increasing the reactive sticking probability of TEG.The results provide further insight into the reaction mechanisms governing selected area epitaxy.

Selective area growth of III-V semiconductors by chemical beam epitaxy: study of reaction mechanisms

1994 ◽  
Author(s):  
Graham J. Davies ◽  
P. J. Skevington ◽  
J. S. Foord ◽  
C. L. French ◽  
C. L. Levoguer
Keyword(s):  
Reaction Mechanisms ◽  
Selective Area Growth ◽  
Chemical Beam Epitaxy ◽  
Selective Area ◽  
Area Growth

Laser Chemical Etching of Conducting and Semiconducting Materials

1982 ◽  
Vol 17 ◽  
Author(s):  
T. J. Chuang
Keyword(s):  
Material Processing ◽  
Laser Radiation ◽  
Reaction Mechanisms ◽  
Chemical Etching ◽  
Surface Reaction ◽  
Semiconducting Materials ◽  
Laser Method ◽  
Experimental Approaches ◽  
Product Species ◽  
Insight Into

ABSTRACTThe purpose of the paper is to examine the basic processes involved in the laser-enhanced chemical etching of solids. Specifically, the process of chemisorption, the reaction between the adsorbate and substrate atoms and the vaporization of product species affected by the laser radiation are discussed. It is shown that the laser method can provide important insight into the gas-surface reaction mechanisms. In addition, a number of examples are given to demonstrate the potential of the technique for applications to material processing. Some current studies on the laser-induced chemical etching of materials relevant to microelectronics are reviewed. Certain practical experimental approaches are also considered.

Photo-Assisted Chemical Beam Epitaxy of II-VI Semiconductors

1992 ◽  
Vol 279 ◽  
Author(s):  
E. Ho ◽  
G. A. Coronado ◽  
L. A. Kolodziejski
Keyword(s):  
Growth Rate ◽  
Growth Conditions ◽  
Reaction Rate Constant ◽  
Chemical Beam Epitaxy ◽  
Selective Area Epitaxy ◽  
Rate Enhancement ◽  
Selective Area ◽  
Beam Incident ◽  
Rate Retardation

ABSTRACTPhoto-assisted epitaxy is a versatile growth technique which allows in situ modification of surface chemical reactions. Under appropriate growth conditions the surface stoichiometry can be tuned by selectively desorbing surface species, or by decomposing particular molecular species, or by affecting the reaction rate constant of a chemical process. A potential application of laser-assisted growth rate enhancement or growth rate retardation is in the area of maskless selective area epitaxy. We have investigated the effect of photons on the growth of ZnSe by solid and gaseous source molecular beam epitaxy using various combination of sources. Significant growth rate enhancement (up to 20x), as well as growth rate suppression (as much as 70%), have been observed depending on the sources employed. In all cases, the laser power density remained low (∼200 mW/cm2), and the creation of photo-generated carriers was found to be required. An electron beam incident to the surface has a similar effect and increased the growth rate.

Surface Reaction Mechanisms in Chemical Beam Epitaxy

1990 ◽  
Vol 204 ◽  
Author(s):  
John S. Foord ◽  
Nagindar K. Singh ◽  
Andrew T.S. Wee ◽  
Cathy L. French ◽  
Emma T. Fitzgerald
Keyword(s):  
Reaction Mechanisms ◽  
Molecular Beam ◽  
Surface Reaction ◽  
Spectroscopic Techniques ◽  
Chemical Beam Epitaxy ◽  
Molecular Beam Scattering ◽  
Group Iii ◽  
Rate Effects ◽  
Beam Scattering ◽  
Complex Growth Rate

ABSTRACTSurface reaction mechanisms which underly the growth of III-V semiconductors by chemical beam epitaxy have been investigated using a combination of surface spectroscopic techniques in conjunction with modulated molecular beam scattering techniques. Emphasis is placed on understanding the complex growth rate effects observed during the growth of Ga(Al,In)As and the origin of selected area epitaxy. These effects are shown to arise from the surface sensitive nature of the decomposition of the group III alkyl source chemicals used in CBE.

Selective-Area Epitaxy and In-Situ Etching of Gaas Using Tris- Dimethylaminoarsenic By Chemical Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
N. Y. Li ◽  
C. W. Tu
Keyword(s):  
Heterojunction Bipolar Transistor ◽  
Device Performance ◽  
Chemical Beam Epitaxy ◽  
Alternative Source ◽  
Group V ◽  
Selective Area Epitaxy ◽  
Carbon Doped ◽  
Selective Area ◽  
Etching Effect

AbstractIn this study, we shall first report selective-area epitaxy (SAE) of GaAs by chemical beam epitaxy (CBE) using tris-dimethylaminoarsenic (TDMAAs), a safer alternative source to arsine (AsH3), as the group V source. With triethylgallium (TEGa) and TDMAAs, true selectivity of GaAs can be achieved at a growth temperature of 470°C, which is much lower than the 600°C in the case of using TEGa and arsenic (As4) or AsH3. Secondly, we apply SAE of carbon-doped AIGaAs/GaAs to a heterojunction bipolar transistor (HBT) with a regrown external base, which exhibits a better device performance. Finally, the etching effect and the etched/regrown interface of GaAs using TDMAAs will be discussed.

Selective area epitaxy and growth over patterned substrates by chemical beam epitaxy

1991 ◽  
Vol 27 (1) ◽  
pp. 3-5 ◽  
Author(s):  
W.T. Tsang ◽  
L. Yang ◽  
M.C. Wu ◽  
Y.K. Chen
Keyword(s):  
Chemical Beam Epitaxy ◽  
Patterned Substrates ◽  
Selective Area Epitaxy ◽  
Selective Area

Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE)

2000 ◽  
Vol 209 (2-3) ◽  
pp. 486-491 ◽  
Author(s):  
R.S Balmer ◽  
T Martin ◽  
M.J Kane ◽  
J.O Maclean ◽  
T.J Whitaker ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Laser Waveguide
Sign in / Sign up

Export Citation Format

Share Document