Surface Reaction Mechanisms in Chemical Beam Epitaxy

1990 ◽  
Vol 204 ◽  
Author(s):  
John S. Foord ◽  
Nagindar K. Singh ◽  
Andrew T.S. Wee ◽  
Cathy L. French ◽  
Emma T. Fitzgerald
Keyword(s):  
Reaction Mechanisms ◽  
Molecular Beam ◽  
Surface Reaction ◽  
Spectroscopic Techniques ◽  
Chemical Beam Epitaxy ◽  
Molecular Beam Scattering ◽  
Group Iii ◽  
Rate Effects ◽  
Beam Scattering ◽  
Complex Growth Rate

ABSTRACTSurface reaction mechanisms which underly the growth of III-V semiconductors by chemical beam epitaxy have been investigated using a combination of surface spectroscopic techniques in conjunction with modulated molecular beam scattering techniques. Emphasis is placed on understanding the complex growth rate effects observed during the growth of Ga(Al,In)As and the origin of selected area epitaxy. These effects are shown to arise from the surface sensitive nature of the decomposition of the group III alkyl source chemicals used in CBE.

Inelastic Collision Processes of Methane and Ethane Molecules at a Pt(111) Surface Studied by Molecular Beam Scattering Techniques

1999 ◽  
Vol 38 (Part 1, No. 12A) ◽  
pp. 6910-6914 ◽  
Author(s):  
Shinjiro Yagyu ◽  
Yasunobu Kino ◽  
Toshiyuki Ikeuchi ◽  
Tomomi Hiraoka ◽  
Takahiro Kondo ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Inelastic Collision ◽  
Molecular Beam Scattering ◽  
Beam Scattering ◽  
Collision Processes

Chemical Reactivity and Molecular Beam Scattering

1976 ◽  
Author(s):  
J. B. Fenn ◽  
T. Nenner ◽  
H. Tien ◽  
P. J. Gale
Keyword(s):  
Molecular Beam ◽  
Chemical Reactivity ◽  
Molecular Beam Scattering ◽  
Beam Scattering
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