Selective-area epitaxy of carbon-doped (Al)GaAs by chemical beam epitaxy

1995 ◽  
Vol 13 (2) ◽  
pp. 664 ◽  
Author(s):  
N. Y. Li
Keyword(s):  
Chemical Beam Epitaxy ◽  
Selective Area Epitaxy ◽  
Carbon Doped ◽  
Selective Area

Selective-Area Epitaxy and In-Situ Etching of Gaas Using Tris- Dimethylaminoarsenic By Chemical Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
N. Y. Li ◽  
C. W. Tu
Keyword(s):  
Heterojunction Bipolar Transistor ◽  
Device Performance ◽  
Chemical Beam Epitaxy ◽  
Alternative Source ◽  
Group V ◽  
Selective Area Epitaxy ◽  
Carbon Doped ◽  
Selective Area ◽  
Etching Effect

AbstractIn this study, we shall first report selective-area epitaxy (SAE) of GaAs by chemical beam epitaxy (CBE) using tris-dimethylaminoarsenic (TDMAAs), a safer alternative source to arsine (AsH3), as the group V source. With triethylgallium (TEGa) and TDMAAs, true selectivity of GaAs can be achieved at a growth temperature of 470°C, which is much lower than the 600°C in the case of using TEGa and arsenic (As4) or AsH3. Secondly, we apply SAE of carbon-doped AIGaAs/GaAs to a heterojunction bipolar transistor (HBT) with a regrown external base, which exhibits a better device performance. Finally, the etching effect and the etched/regrown interface of GaAs using TDMAAs will be discussed.

Photo-Assisted Chemical Beam Epitaxy of II-VI Semiconductors

1992 ◽  
Vol 279 ◽  
Author(s):  
E. Ho ◽  
G. A. Coronado ◽  
L. A. Kolodziejski
Keyword(s):  
Growth Rate ◽  
Growth Conditions ◽  
Reaction Rate Constant ◽  
Chemical Beam Epitaxy ◽  
Selective Area Epitaxy ◽  
Rate Enhancement ◽  
Selective Area ◽  
Beam Incident ◽  
Rate Retardation

ABSTRACTPhoto-assisted epitaxy is a versatile growth technique which allows in situ modification of surface chemical reactions. Under appropriate growth conditions the surface stoichiometry can be tuned by selectively desorbing surface species, or by decomposing particular molecular species, or by affecting the reaction rate constant of a chemical process. A potential application of laser-assisted growth rate enhancement or growth rate retardation is in the area of maskless selective area epitaxy. We have investigated the effect of photons on the growth of ZnSe by solid and gaseous source molecular beam epitaxy using various combination of sources. Significant growth rate enhancement (up to 20x), as well as growth rate suppression (as much as 70%), have been observed depending on the sources employed. In all cases, the laser power density remained low (∼200 mW/cm2), and the creation of photo-generated carriers was found to be required. An electron beam incident to the surface has a similar effect and increased the growth rate.

Selective area epitaxy and growth over patterned substrates by chemical beam epitaxy

1991 ◽  
Vol 27 (1) ◽  
pp. 3-5 ◽  
Author(s):  
W.T. Tsang ◽  
L. Yang ◽  
M.C. Wu ◽  
Y.K. Chen
Keyword(s):  
Chemical Beam Epitaxy ◽  
Patterned Substrates ◽  
Selective Area Epitaxy ◽  
Selective Area

Integrated laser/waveguide by shadow-masked selective area epitaxy using chemical beam epitaxy (CBE)

2000 ◽  
Vol 209 (2-3) ◽  
pp. 486-491 ◽  
Author(s):  
R.S Balmer ◽  
T Martin ◽  
M.J Kane ◽  
J.O Maclean ◽  
T.J Whitaker ◽  
...  
Keyword(s):  
Chemical Beam Epitaxy ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Laser Waveguide

Surface Reaction Mechanisms Governing the Selective Area Growth of III-V Compound Semiconductors by Chemical Beam Epitaxy

1992 ◽  
Vol 282 ◽  
Author(s):  
G J Davies ◽  
P J Skevington ◽  
C L Levoguer ◽  
C L French ◽  
J S Foord
Keyword(s):  
Reaction Mechanisms ◽  
Surface Reaction ◽  
Sticking Probability ◽  
Chemical Beam Epitaxy ◽  
Adsorbed Species ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Adsorbed Phase ◽  
Underlying Mechanisms ◽  
Insight Into

ABSTRACTPrevious studies have helped elucidate the underlying mechanisms for selective area epitaxy in chemical beam epitaxy by investigating the reactions of triethylgallium (TEG) on a silicon nitride surface. However no explanation was produced as to why selective growth is lost at low temperatures or high Gp V beam fluxes. This question is addressed in this paper which examines the interaction between TEG and As2 on the silicon nitridesurface. In the absence of arsenic, TEG adsorbs with a low sticking probability on the dielectric. Adsorbed species mainly desorb rather than decompose, and any Ga produced on the surface becomes converted to a nitride form; no free Ga is produced hence GaAs growth cannot occur. Arsenic is found to form a weakly adsorbed phase on the nitride surface. Reaction with co-adsorbed TEG results in the formation of GaAs. Adsorbed As also is efficient in increasing the reactive sticking probability of TEG.The results provide further insight into the reaction mechanisms governing selected area epitaxy.

Facet Evolution and Selective Growth of GaAs/AlGaAs Lateral Structure Grown by Growth–Interrupted Chemical Beam Epitaxy Using Unprecracked Monoethylarsine

1995 ◽  
Vol 405 ◽  
Author(s):  
Jeong-Rae Ro ◽  
Sung-Bock Kim ◽  
Seong-Ju Park ◽  
Jihwa Lee ◽  
El-Hang Lee
Keyword(s):  
Quantum Wires ◽  
Gaas Layer ◽  
Chemical Beam Epitaxy ◽  
Selective Area Epitaxy ◽  
Potential Implication ◽  
Patterned Substrate ◽  
Selective Area ◽  
Growth Interruption ◽  
Surface Migration ◽  
Crystallographic Planes

AbstractFacet evolution and selective area epitaxy of GaAs/AIGaAs ridge and V-groove structure grown on non-planar GaAs(100) substrate by chemical beam epitaxy(CBE) have been investigated for nanostructure applications. To enhance the crystallographic selectivity and to study the new facet evolution on patterned substrate, GaAs and AlGaAs epilayer were grown by growth-interruption mode and continuous mode, respectively. High selectivity of GaAs layer was observed to depend on the various crystallographic planes even at low growth temperature. This was attributed to the efficient Ga surface migration and desorption during the growth-interruption periods. The growth-interruption method was found to be very efficient in improving the morphology of faceted surfaces. We demonstrated that the formation of (111) V-groove and (411) ridge GaAs structures which were surrounded by AlGaAs layer to show the potential implication of this method for the formation of quantum wires.

Erratum: GaAs/AlGaAs multiple quantum well pin diodes grown by selective area epitaxy

1988 ◽  
Vol 24 (17) ◽  
pp. 1117
Author(s):  
D.A. Roberts ◽  
J.P.R. David ◽  
G. Hill ◽  
P.A. Houston ◽  
M.A. Pate ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Pin Diodes ◽  
Selective Area Epitaxy ◽  
Selective Area

Monolithic integration of InGaAsp/Inp lasers and heterostructure bipolar transistors by selective area epitaxy

1993 ◽  
Vol 29 (8) ◽  
pp. 645 ◽  
Author(s):  
X. An ◽  
H. Temkin ◽  
A. Feygenson ◽  
R.A. Hamm ◽  
M.A. Cotta ◽  
...  
Keyword(s):  
Bipolar Transistors ◽  
Monolithic Integration ◽  
Selective Area Epitaxy ◽  
Selective Area
Sign in / Sign up

Export Citation Format

Share Document