Selective-Area Epitaxy and In-Situ Etching of Gaas Using Tris- Dimethylaminoarsenic By Chemical Beam Epitaxy

1996 ◽  
Vol 421 ◽  
Author(s):  
N. Y. Li ◽  
C. W. Tu
Keyword(s):  
Heterojunction Bipolar Transistor ◽  
Device Performance ◽  
Chemical Beam Epitaxy ◽  
Alternative Source ◽  
Group V ◽  
Selective Area Epitaxy ◽  
Carbon Doped ◽  
Selective Area ◽  
Etching Effect

AbstractIn this study, we shall first report selective-area epitaxy (SAE) of GaAs by chemical beam epitaxy (CBE) using tris-dimethylaminoarsenic (TDMAAs), a safer alternative source to arsine (AsH3), as the group V source. With triethylgallium (TEGa) and TDMAAs, true selectivity of GaAs can be achieved at a growth temperature of 470°C, which is much lower than the 600°C in the case of using TEGa and arsenic (As4) or AsH3. Secondly, we apply SAE of carbon-doped AIGaAs/GaAs to a heterojunction bipolar transistor (HBT) with a regrown external base, which exhibits a better device performance. Finally, the etching effect and the etched/regrown interface of GaAs using TDMAAs will be discussed.

Photo-Assisted Chemical Beam Epitaxy of II-VI Semiconductors

1992 ◽  
Vol 279 ◽  
Author(s):  
E. Ho ◽  
G. A. Coronado ◽  
L. A. Kolodziejski
Keyword(s):  
Growth Rate ◽  
Growth Conditions ◽  
Reaction Rate Constant ◽  
Chemical Beam Epitaxy ◽  
Selective Area Epitaxy ◽  
Rate Enhancement ◽  
Selective Area ◽  
Beam Incident ◽  
Rate Retardation

ABSTRACTPhoto-assisted epitaxy is a versatile growth technique which allows in situ modification of surface chemical reactions. Under appropriate growth conditions the surface stoichiometry can be tuned by selectively desorbing surface species, or by decomposing particular molecular species, or by affecting the reaction rate constant of a chemical process. A potential application of laser-assisted growth rate enhancement or growth rate retardation is in the area of maskless selective area epitaxy. We have investigated the effect of photons on the growth of ZnSe by solid and gaseous source molecular beam epitaxy using various combination of sources. Significant growth rate enhancement (up to 20x), as well as growth rate suppression (as much as 70%), have been observed depending on the sources employed. In all cases, the laser power density remained low (∼200 mW/cm2), and the creation of photo-generated carriers was found to be required. An electron beam incident to the surface has a similar effect and increased the growth rate.

GaInP Selective Area Epitaxy for Heterojunction Bipolar Transistor Applications

1996 ◽  
Vol 448 ◽  
Author(s):  
S. H. PARK ◽  
S.-L. FU ◽  
P. K. L. YU ◽  
P. M. ASBECK
Keyword(s):  
Light Field ◽  
Defect Density ◽  
Forward Bias ◽  
Dark Field ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Selective Area Epitaxy ◽  
Metal Base ◽  
Selective Area

AbstractA study of selective area epitaxy (SAE) of GalnP lattice matched to GaAs is presented. The selectively regrown GaInP is used as the emitter of a novel heterojunction bipolar transistor (HBT) device structure. Successful SAE of GalnP on both dark field (mostly covered) and light field (mostly open) SiO2 masks is compared. To characterize the critical regrown heterojunction, diodes and HBTs were fabricated and measured. It is found that a pre-growth pause of either TEGa or PH3 results in forward bias characteristics with low leakage and an ideality factor of ~1.25, indicating low interfacial defect density. Non-self aligned regrown emitter HBTs grown with a dark field mask scheme have been fabricated. Devices with an emitter area of 3x12 μm exhibit small signal current gain up to 80 with an fT and fMAX of 22 GHz and 18 GHz, respectively. To further improve the performance of these devices, a structure with a self-aligned refractory metal base contact and light field regrowth is proposed.

Microwave characteristics of a carbon-doped base InP/InGaAs heterojunction bipolar transistor grown by chemical beam epitaxy

1993 ◽  
Vol 29 (21) ◽  
pp. 1893 ◽  
Author(s):  
J.-I. Song ◽  
W.-P. Hong ◽  
C.J. Palmstro̸m ◽  
J.R. Hayes ◽  
K.B. Chough ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped ◽  
Microwave Characteristics

Very high gain in carbon-doped base heterojunction bipolar transistor grown by chemical beam epitaxy

1992 ◽  
Vol 28 (14) ◽  
pp. 1344 ◽  
Author(s):  
J.L. Benchimol ◽  
F. Alexandre ◽  
C. Dubon-Chevallier ◽  
F. Héliot ◽  
R. Bourguiga ◽  
...  
Keyword(s):  
High Gain ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Chemical Beam Epitaxy ◽  
Carbon Doped ◽  
Very High

In situ device processing using shadow mask selective area epitaxy and in situ metallization

2000 ◽  
Vol 29 (5) ◽  
pp. 598-602 ◽  
Author(s):  
Y. Luo ◽  
L. Zeng ◽  
W. Lin ◽  
B. Yang ◽  
M. C. Tamargo ◽  
...  
Keyword(s):  
Shadow Mask ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Device Processing

In-Situ Etch to Improve Chemical Beam Epitaxy Regrown AlgaAs/GaAs Interfaces for HBT Applications

1996 ◽  
Vol 448 ◽  
Author(s):  
Y.M. Hsin ◽  
N. Y. Li ◽  
C. W. Tu ◽  
P. M. Asbeck
Keyword(s):  
Etching Rate ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Chemical Beam Epitaxy ◽  
Capacitance Voltage ◽  
Substrate Temperatures ◽  
Etching Effect

AbstractWe have studied the etching effect of AlxGa1-xAs (0≤ x ≤ 0.5) by trisdimethylaminoarsenic (TDMAAs) at different substrate temperatures, and the quality of the resulting etched/regrown GaAs interface. We find that the etching rate of AlxGa1-x As decreases with increasing Al composition, and the interface trap density of the TDMAAs etched/regrown interface can be reduced by about a factor of 10 as deduced from capacitance-voltage carrier profiles. A smooth surface morphology of GaAs with an interface state density of 1.4×l011 cm−2 can be obtained at a lower in-situ etching temperature of 550°C. Moreover, by using this in-situ etching the I-V characteristics of regrown p-n junctions of Al0.35Ga0.65As/Al0.25Ga0.75As and Al0.35Ga0.65As/GaAs can be improved.

In-situ selective-area epitaxy of GaAs using a GaAs oxide layer as a mask

1991 ◽  
Vol 111 (1-4) ◽  
pp. 570-573 ◽  
Author(s):  
Y. Hiratani ◽  
Y. Ohki ◽  
Y. Sugimoto ◽  
K. Akita
Keyword(s):  
Oxide Layer ◽  
Selective Area Epitaxy ◽  
Selective Area

In-situ mask removal in selective area epitaxy using metal organic chemical vapor deposition

2005 ◽  
Vol 277 (1-4) ◽  
pp. 97-103 ◽  
Author(s):  
S. Birudavolu ◽  
S.Q. Luong ◽  
N. Nuntawong ◽  
Y.C. Xin ◽  
C.P. Hains ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Selective Area Epitaxy ◽  
Selective Area ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition
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