Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
C. Piskoti ◽  
B. Mykolajenko ◽  
M. Vaziri
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Metal Contact ◽  
Epitaxial Layers ◽  
Preliminary Results ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTTo study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

scholarly journals Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Krzesimir Nowakowski-Szkudlarek ◽  
Grzegorz Muziol ◽  
Mikolaj Żak ◽  
Mateusz Hajdel ◽  
Marcin Siekacz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Contact Layer ◽  
Light Emitting ◽  
Mg Doping ◽  
Current Voltage ◽  
Type Contact ◽  
Current Voltage Characteristics ◽  
P Type ◽  
Diode Current

We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping level as high as 2 × 1020 cm–3.

In situ Mg surface treatment of p-type GaN grown by ammonia-molecular-beam epitaxy for efficient Ohmic contact formation

2003 ◽  
Vol 82 (5) ◽  
pp. 736-738 ◽  
Author(s):  
H. Tang ◽  
J. A. Bardwell ◽  
J. B. Webb ◽  
S. Rolfe ◽  
Y. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Surface Treatment ◽  
Ohmic Contact ◽  
Molecular Beam ◽  
Contact Formation ◽  
P Type ◽  
Ohmic Contact Formation

The Properties of n-ZnO/p-SiC Heterojunctions and their Potential Applications for Devices

2006 ◽  
Vol 527-529 ◽  
pp. 1571-1574 ◽  
Author(s):  
Cole W. Litton ◽  
Ya.I. Alivov ◽  
D. Johnstone ◽  
Ümit Özgür ◽  
V. Avrutin ◽  
...  
Keyword(s):  
Room Temperature ◽  
Molecular Beam ◽  
Reverse Bias ◽  
Zno Films ◽  
Turn On ◽  
Forward Current ◽  
Current Voltage ◽  
Potential Applications ◽  
Current Voltage Characteristics ◽  
P Type

Heteroepitaxial n-ZnO films have been grown on commercial p-type 6H-SiC substrates by plasma-assisted molecular-beam epitaxy, and n-ZnO/p-SiC heterojunction mesa structures have been fabricated and their photoresponse properties have been studied. Current-voltage characteristics of the structures had a very good rectifying diode-like behavior with a leakage current less than 2 x 10-4 A/cm2 at -10 V, a breakdown voltage greater than 20 V, a forward turn on voltage of ∼5 V, and a forward current of ∼2 A/cm2 at 8 V. Photosensitivity of the diodes, when illuminated from ZnO side, was studied at room temperature and photoresponsivity of as high as 0.045 A/W at -7.5 V reverse bias was observed for photon energies higher than 3.0 eV.

Current‐voltage characteristics of In0.53Ga0.47As/In0.52Al0.48As resonant tunneling barrier structures grown by molecular beam epitaxy

1988 ◽  
Vol 52 (4) ◽  
pp. 314-316 ◽  
Author(s):  
Yoshihiro Sugiyama ◽  
Tsuguo Inata ◽  
Shunichi Muto ◽  
Yoshiaki Nakata ◽  
Satoshi Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Tunneling Barrier ◽  
Current Voltage ◽  
Current Voltage Characteristics

Low Resistance Ohmic Contact on p-type GaN Grown by Plasma-Assisted Molecular Beam Epitaxy

1996 ◽  
Vol 423 ◽  
Author(s):  
Myung C. Yoo ◽  
J. W. Lee ◽  
J. M. Myoung ◽  
K. H. Shim ◽  
K. Kim
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contacts ◽  
Doping Concentration ◽  
Molecular Beam ◽  
Plasma Source ◽  
Nitrogen Plasma ◽  
Specific Contact Resistance ◽  
Metal Bilayers ◽  
Auger Microscopy ◽  
P Type

AbstractOhmic contacts on p-type GaN have been investigated. High quality GaN epilayers on cplane sapphire were prepared using plasma-assisted molecular beam epitaxy that utilized an inductively coupled rf nitrogen plasma source and solid source beams. The resulting film thickness and the doping concentration of the grown samples were in the range of 0.7–1.35 μm and 1018 – 1020/cm3, respectively. The metallization consisted of high work function metal bilayers which included a combinations of 25 nm-thick Ni, Ti, Pt and/or Cr and 200 nm-thick Au on the highly p-doped GaN in a transmission line model pattern. Ohmic contacts were formed by alloying the bi-layers using rapid thermal annealing (RTA) at temperatures in the range of 300–700 °C for 1 min under nitrogen ambient. Current-voltage measurements showed that the specific contact resistance was as low as 1.2 × 10 −4 Ω–cm2 for the sample having 1.4 × 1020/cm3p-type doping concentration with a Cr/Au contact annealed at 500 °C for 1 min by RTA. Judging from the scanning Auger microscopy results and the glancing angle x-ray diffraction analysis, this resistance is attributed to Cr diffusion into the GaN layer.

Current–Voltage Characteristics of GeSn/Ge Heterojunction Diodes Grown by Molecular Beam Epitaxy

2013 ◽  
Vol 34 (10) ◽  
pp. 1217-1219 ◽  
Author(s):  
Sangcheol Kim ◽  
Jay Gupta ◽  
Nupur Bhargava ◽  
Matthew Coppinger ◽  
James Kolodzey
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Heterojunction Diodes

scholarly journals Омические контакты к оксиду европия для устройств спинтроники

2019 ◽  
Vol 45 (7) ◽  
pp. 38
Author(s):  
А.А. Андреев ◽  
Ю.В. Грищенко ◽  
И.А. Черных ◽  
М.Л. Занавескин ◽  
Э.Ф. Лобанович
Keyword(s):  
Molecular Beam Epitaxy ◽  
Contact Resistance ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
In Situ Fabrication ◽  
Linear Current ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve

AbstractA technique for in situ fabrication of aluminum-based Ohmic contacts to EuO by molecular-beam epitaxy is proposed. These contacts have a linear current–voltage curve and a contact resistance of 0.55 Ω mm and are stable in air. This suggests that the proposed technique holds promise for spintronic applications.

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