Current-voltage characteristics of high current density silicon Esaki diodes grown by molecular beam epitaxy and the influence of thermal annealing

2000 ◽  
Vol 47 (9) ◽  
pp. 1707-1714 ◽  
Author(s):  
M.W. Dashiell ◽  
R.T. Troeger ◽  
S.L. Rommel ◽  
T.N. Adam ◽  
P.R. Berger ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Thermal Annealing ◽  
Current Density ◽  
Molecular Beam ◽  
High Current Density ◽  
High Current ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals Current-voltage curve of a bipolar membrane at high current density

Desalination ◽  
1996 ◽  
Vol 104 (1-2) ◽  
pp. 13-18 ◽  
Author(s):  
T. Aritomi ◽  
Th. van den Boomgaard ◽  
H. Strathmann
Keyword(s):  
Current Density ◽  
High Current Density ◽  
High Current ◽  
Bipolar Membrane ◽  
Voltage Curve ◽  
Current Voltage ◽  
Current Voltage Curve

Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
C. Piskoti ◽  
B. Mykolajenko ◽  
M. Vaziri
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Metal Contact ◽  
Epitaxial Layers ◽  
Preliminary Results ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTTo study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

scholarly journals Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Krzesimir Nowakowski-Szkudlarek ◽  
Grzegorz Muziol ◽  
Mikolaj Żak ◽  
Mateusz Hajdel ◽  
Marcin Siekacz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Contact Layer ◽  
Light Emitting ◽  
Mg Doping ◽  
Current Voltage ◽  
Type Contact ◽  
Current Voltage Characteristics ◽  
P Type ◽  
Diode Current

We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping level as high as 2 × 1020 cm–3.

Current‐voltage characteristics of In0.53Ga0.47As/In0.52Al0.48As resonant tunneling barrier structures grown by molecular beam epitaxy

1988 ◽  
Vol 52 (4) ◽  
pp. 314-316 ◽  
Author(s):  
Yoshihiro Sugiyama ◽  
Tsuguo Inata ◽  
Shunichi Muto ◽  
Yoshiaki Nakata ◽  
Satoshi Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Tunneling Barrier ◽  
Current Voltage ◽  
Current Voltage Characteristics

Turn-on Process in High Voltage 4H-SiC Thyristors

1998 ◽  
Vol 512 ◽  
Author(s):  
N. V. Dyakonova ◽  
M. E. Levinshtein ◽  
J. W. Palmour ◽  
S. L. Rumyantsev ◽  
R. Sing
Keyword(s):  
Current Density ◽  
Voltage Drop ◽  
High Current Density ◽  
Residual Voltage ◽  
Turn On ◽  
Current Voltage ◽  
Steady State Current ◽  
High Bias ◽  
Current Voltage Characteristics ◽  
Very High

ABSTRACTThe turn-on process and the steady state current-voltage characteristics have been investigated in 4H-SiC thyristors with a forward breakover voltage close to 700 V and pulse switch current density of 16 000 A/cm2. The rise current constant, τr, has been found to decrease monotonically with temperature: τr, ≈ 10.5 nsec at T = 300 K and τr ≈ 1.2 nsec at T = 500 K at high bias Uo ≥ 300 V. The value of τr ≈ 1.2 nsec is the lowest observed value for SiC thyristors. At very high current density, j ≥ 5 103 A/cm2, the residual voltage drop for 4H-SiC thyristors is lower than for identically rated Si thyristors. The voltage drop Udo decreases monotonically with temperature.

Current–Voltage Characteristics of GeSn/Ge Heterojunction Diodes Grown by Molecular Beam Epitaxy

2013 ◽  
Vol 34 (10) ◽  
pp. 1217-1219 ◽  
Author(s):  
Sangcheol Kim ◽  
Jay Gupta ◽  
Nupur Bhargava ◽  
Matthew Coppinger ◽  
James Kolodzey
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Heterojunction Diodes

scholarly journals МДП транзистор на основе пленки PbSnTe : In с подзатворным диэлектриком Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--=SUP=-*-=/SUP=-

2022 ◽  
Vol 56 (2) ◽  
pp. 243
Author(s):  
А.Э. Климов ◽  
В.А. Голяшов ◽  
Д.В. Горшков ◽  
Е.В. Матюшенко ◽  
И.Г. Неизвестный ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gate Dielectric ◽  
Drain Current ◽  
Channel Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Mis Structures ◽  
Al2o3 Thin Film

Results on the creation and properties of transistor-type MIS structures (MIST) with an Al2O3 thin-film gate dielectric based on PbSnTe:In films obtained by molecular beam epitaxy are presented. The source-drain current-voltage characteristics (CVC) and gate characteristics of the MIST at Т = 4.2 К have been investigated. It is shown that in MIST based on PbSnTe:In films with n ~ 1017 cm-3 the modulation of the channel current reaches 7 – 8 % in the range of gate voltages – 10 V < Ugate < + 10 V. The features of the source-drain CVC and the gate characteristics for a pulsed and sawtooth variation of Ugate are considered.

scholarly journals Влияние морфологии поверхности слоев InAlAs на температурные зависимости параметров диодов Шоттки Au/Ti/n-InAlAs (001)

2019 ◽  
Vol 45 (4) ◽  
pp. 59
Author(s):  
И.Б. Чистохин ◽  
М.С. Аксенов ◽  
Н.А. Валишева ◽  
Д.В. Дмитриев ◽  
И.В. Марчишин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Barrier Height ◽  
Surface Density ◽  
Molecular Beam ◽  
Schottky Barriers ◽  
Structural Defects ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Current Voltage Characteristics

AbstractGrowth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10^7 cm^–2, these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.

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