Growth of high-quality p-type GaAs epitaxial layers using carbon tetrabromide by gas source molecular-beam epitaxy and molecular-beam epitaxy

1993 ◽  
Vol 11 (3) ◽  
pp. 915 ◽  
Author(s):  
Yu-Min Houng
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
High Quality ◽  
Carbon Tetrabromide ◽  
Gas Source ◽  
P Type

Heavily carbon-doped p-type (In)GaAs grown by gas-source molecular beam epitaxy using diiodomethane

1995 ◽  
Vol 150 ◽  
pp. 221-226
Author(s):  
T. Tomioka ◽  
N. Okamoto ◽  
H. Ando ◽  
S. Yamaura ◽  
T. Fujii
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Gas Source ◽  
P Type

High-Quality AlGaN/GaN Grown on Sapphire by Gas-Source Molecular Beam Epitaxy using a Thin Low-Temperature AlN Layer

1999 ◽  
Vol 595 ◽  
Author(s):  
M. J. Jurkovic ◽  
L.K. Li ◽  
B. Turk ◽  
W. I. Wang ◽  
S. Syed ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Structural Characteristics ◽  
High Quality ◽  
Gas Source ◽  
Background Doping ◽  
Shubnikov De Haas Oscillations

AbstractGrowth of high-quality AlGaN/GaN heterostructures on sapphire by ammonia gassource molecular beam epitaxy is reported. Incorporation of a thin AlN layer grown at low temperature within the GaN buffer is shown to result in enhanced electrical and structural characteristics for subsequently grown heterostructures. AlGaN/GaN structures exhibiting reduced background doping and enhanced Hall mobilities (2100, 10310 and 12200 cm2/Vs with carrier sheet densities of 6.1 × 1012 cm−2, 6.0 × 1012 cm−2, and 5.8 × 1012 cm−2 at 300 K, 77 K, and 0.3 K, respectively) correlate with dislocation filtering in the thin AlN layer. Magnetotransport measurements at 0.3 K reveal well-resolved Shubnikov-de Haas oscillations starting at 3 T.

Novel In0.49Ga0.51P/(In)GaAs/GaAs p-type modulation doped heterostructure grown by gas source molecular beam epitaxy

1998 ◽  
Vol 193 (1-2) ◽  
pp. 28-32 ◽  
Author(s):  
J.X. Chen ◽  
A.Z. Li ◽  
Q.K. Yang ◽  
C. Lin ◽  
Y.C. Ren ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source ◽  
P Type

Low-resistivity p-type ZnSe, ZnSSe and MgZnSSe grown by gas-source molecular beam epitaxy

1996 ◽  
Vol 159 (1-4) ◽  
pp. 257-260 ◽  
Author(s):  
M. Imaizumi ◽  
H. Kuroki ◽  
Y. Endoh ◽  
M. Suita ◽  
K. Ohtsuka ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Resistivity ◽  
Gas Source ◽  
P Type

Active-Nitrogen-Doped P-Type ZnSe Grown by Gas-Source Molecular Beam Epitaxy for Blue-Light-Emitting Devices

1993 ◽  
Vol 32 (Part 2, No. 12A) ◽  
pp. L1725-L1727 ◽  
Author(s):  
Masayuki Imaizumi ◽  
Yasuyuki Endoh ◽  
Ken-ichi Ohtsuka ◽  
Toshiro Isu ◽  
Masahiro Nunoshita
Keyword(s):  
Molecular Beam Epitaxy ◽  
Blue Light ◽  
Molecular Beam ◽  
Active Nitrogen ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
Nitrogen Doped ◽  
Gas Source ◽  
P Type

Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
C. Piskoti ◽  
B. Mykolajenko ◽  
M. Vaziri
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Metal Contact ◽  
Epitaxial Layers ◽  
Preliminary Results ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTTo study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

High-quality InGaP and InGaP/InAlP multiple quantum well grown by gas-source molecular beam epitaxy

1994 ◽  
Vol 136 (1-4) ◽  
pp. 306-309 ◽  
Author(s):  
Chunhui Yan ◽  
Dianzhao Sun ◽  
Hongxi Guo ◽  
Xiaobing Li ◽  
Shirong Zu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Quality ◽  
Gas Source

COMPARISON OF DONOR AND ACCEPTOR LEVELS IN UNDOPED, HIGH QUALITY β-FeSi2 FILMS GROWN BY MBE AND MULTI-LAYER METHOD

2002 ◽  
Vol 16 (28n29) ◽  
pp. 4314-4317 ◽  
Author(s):  
K. TAKAKURA ◽  
N. SEKI ◽  
T. SUEMASU ◽  
F. HASEGAWA
Keyword(s):  
Molecular Beam Epitaxy ◽  
Temperature Dependence ◽  
Carrier Density ◽  
Molecular Beam ◽  
High Quality ◽  
Layer Method ◽  
Donor And Acceptor ◽  
P Type

The carrier density of highly [100]-oriented β- FeSi 2 films grown by molecular beam epitaxy (MBE) was smaller than that by the multilayer method. For the MBE grown, undoped n- and p-type β- FeSi 2 films, only one donor (E D1 = 0.21 eV) and one acceptor (E A2 = 0.11 eV) levels were obtained from the temperature dependence of the carrier density, in contrast with the fact that two kinds of donor (E D1 = 0.21 eV and E D2 = 0.08 eV) and acceptor (E A1 = 0.19 eV and E A2 = 0.11 eV) levels were obtained for layers grown by multi-layer method. These results suggest that the decrease of the carrier density in the MBE-grown films is due to disappearance of the E D2 or E A1 level.

Arsenic incorporation and doping behaviour in silicon and SiGe epitaxial layers grown by gas source molecular beam epitaxy

1995 ◽  
Vol 11 (4) ◽  
pp. 396-399 ◽  
Author(s):  
J. M. Fernández ◽  
M. H. Xie ◽  
A. Matsumura ◽  
S. M. Mokler ◽  
J. Zhang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Epitaxial Layers ◽  
Gas Source ◽  
Doping Behaviour ◽  
Arsenic Incorporation
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