Current-voltage characteristics ofp-Ge/n-GaAs heterojunction diodes grown by molecular beam epitaxy

1990 ◽  
Vol 19 (6) ◽  
pp. 575-580 ◽  
Author(s):  
Masafumi Kawanaka ◽  
Jun’ichi Sone
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Heterojunction Diodes

Current–Voltage Characteristics of GeSn/Ge Heterojunction Diodes Grown by Molecular Beam Epitaxy

2013 ◽  
Vol 34 (10) ◽  
pp. 1217-1219 ◽  
Author(s):  
Sangcheol Kim ◽  
Jay Gupta ◽  
Nupur Bhargava ◽  
Matthew Coppinger ◽  
James Kolodzey
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Heterojunction Diodes

Study of Ohmic Contacts on P-Type ZnSe and ZnSe Epitaxial Layers Grown by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
C. Piskoti ◽  
B. Mykolajenko ◽  
M. Vaziri
Keyword(s):  
Molecular Beam Epitaxy ◽  
Ohmic Contact ◽  
Ohmic Contacts ◽  
Molecular Beam ◽  
Metal Contact ◽  
Epitaxial Layers ◽  
Preliminary Results ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
P Type

ABSTRACTTo study the formation of ohmic contacts, several metals have been deposited on p-types ZnTe and ZnSe epitaxial layers. The metals were deposited on the layers either by simple evaporation or by electroplating. The current-voltage characteristics associated with each metal contact were measured. The preliminary results of these measurements indicate that electroplating is a better technique for making ohmic contact to these layers.

scholarly journals Optimization of p-type contacts to InGaN-based laser diodes and light emitting diodes grown by plasma assisted molecular beam epitaxy

2020 ◽  
Vol 50 (2) ◽  
Author(s):  
Krzesimir Nowakowski-Szkudlarek ◽  
Grzegorz Muziol ◽  
Mikolaj Żak ◽  
Mateusz Hajdel ◽  
Marcin Siekacz ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Contact Layer ◽  
Light Emitting ◽  
Mg Doping ◽  
Current Voltage ◽  
Type Contact ◽  
Current Voltage Characteristics ◽  
P Type ◽  
Diode Current

We investigated the influence of the In0.17Ga0.83N:Mg contact layer grown by plasma assisted molecular beam epitaxy on the resistivity of p-type Ni/Au contacts. We demonstrate that the Schottky barrier width for p-type contact is less than 5 nm. We compare circular transmission line measurements with a p-n diode current-voltage characteristics and show that discrepancies between these two methods can occur if surface quality is deteriorated. It is found that the most efficient contacts to p-type material consist of In0.17Ga0.83N:Mg contact layer with Mg doping level as high as 2 × 1020 cm–3.

Current‐voltage characteristics of In0.53Ga0.47As/In0.52Al0.48As resonant tunneling barrier structures grown by molecular beam epitaxy

1988 ◽  
Vol 52 (4) ◽  
pp. 314-316 ◽  
Author(s):  
Yoshihiro Sugiyama ◽  
Tsuguo Inata ◽  
Shunichi Muto ◽  
Yoshiaki Nakata ◽  
Satoshi Hiyamizu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Resonant Tunneling ◽  
Molecular Beam ◽  
Tunneling Barrier ◽  
Current Voltage ◽  
Current Voltage Characteristics

scholarly journals МДП транзистор на основе пленки PbSnTe : In с подзатворным диэлектриком Al-=SUB=-2-=/SUB=-O-=SUB=-3-=/SUB=--=SUP=-*-=/SUP=-

2022 ◽  
Vol 56 (2) ◽  
pp. 243
Author(s):  
А.Э. Климов ◽  
В.А. Голяшов ◽  
Д.В. Горшков ◽  
Е.В. Матюшенко ◽  
И.Г. Неизвестный ◽  
...  
Keyword(s):  
Thin Film ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gate Dielectric ◽  
Drain Current ◽  
Channel Current ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Mis Structures ◽  
Al2o3 Thin Film

Results on the creation and properties of transistor-type MIS structures (MIST) with an Al2O3 thin-film gate dielectric based on PbSnTe:In films obtained by molecular beam epitaxy are presented. The source-drain current-voltage characteristics (CVC) and gate characteristics of the MIST at Т = 4.2 К have been investigated. It is shown that in MIST based on PbSnTe:In films with n ~ 1017 cm-3 the modulation of the channel current reaches 7 – 8 % in the range of gate voltages – 10 V < Ugate < + 10 V. The features of the source-drain CVC and the gate characteristics for a pulsed and sawtooth variation of Ugate are considered.

scholarly journals Влияние морфологии поверхности слоев InAlAs на температурные зависимости параметров диодов Шоттки Au/Ti/n-InAlAs (001)

2019 ◽  
Vol 45 (4) ◽  
pp. 59
Author(s):  
И.Б. Чистохин ◽  
М.С. Аксенов ◽  
Н.А. Валишева ◽  
Д.В. Дмитриев ◽  
И.В. Марчишин ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Barrier Height ◽  
Surface Density ◽  
Molecular Beam ◽  
Schottky Barriers ◽  
Structural Defects ◽  
Current Voltage ◽  
Temperature Dependences ◽  
Current Voltage Characteristics

AbstractGrowth-related structural defects present on the surface of InAlAs layers grown by molecular beam epitaxy on InP(001) substrates influence the temperature dependences of the current–voltage characteristics of Au/Ti/InAlAs Schottky barriers. It is established that these defects in the form of pits cause the appearance of regions with reduced barrier height. At a surface density of ≥10^7 cm^–2, these defects significantly influence the parameters of the Schottky barriers at temperatures below 200 K.

scholarly journals Study of the current-voltage characteristics of n-on-p junction fabricated by pr oton-implanted molecular beam epitaxial Hg1-xCdxTe

2003 ◽  
Vol 52 (6) ◽  
pp. 1496
Author(s):  
Chen Gui-Bin ◽  
Li Zhi-Feng ◽  
Cai Wei-Ying ◽  
He Li ◽  
Hu Xiao-Ning ◽  
...  
Keyword(s):  
Molecular Beam ◽  
Molecular Beam Epitaxial ◽  
Current Voltage ◽  
Current Voltage Characteristics

Deep-Level Dominated Current-Voltage Characteristics of Novel Semiconductor Heterostructures

1989 ◽  
Vol 163 ◽  
Author(s):  
K. Das
Keyword(s):  
Molecular Beam ◽  
Deep Level ◽  
Silicon On Insulator ◽  
Conduction Band Edge ◽  
Material System ◽  
Discrete State ◽  
Sapphire Substrates ◽  
Current Voltage ◽  
Gaas Films ◽  
Current Voltage Characteristics

AbstractCurrent-voltage characteristics of Au contacts formed on buried implanted oxide silicon-on-insulator structures and molecular beam epitaxially grown GaAs on (1012) sapphire and silicon-on-sapphire substrates indicate that the dominant transport mechanism in these films is space-charge-limited current conduction in the presence of deep-level states. The deep-level parameters, determined using an analysis of the current-voltage characteristics, appear to be sensitive to the nature of crystallographic defects present in the grown layers. Conduction in the GaAs film on SOS was dominated by one discrete state located ~ 0.28eV below the conduction band-edge, which is close to the El center uniquely observed in the molecular beam epitaxially grown GaAs-on-Si. Discrete levels are also observed in annealed buried implanted oxide silicon-on-insulator films. In contrast, the GaAs films deposited directly on (1012) sapphire substrates and rapid-thermally annealed high-dose As implanted buried oxide SOI films appear to have a continuous distribution of states. The distributed states in GaAs films deposited directly on sapphire probably arise from the electrical activity of the double-position boundaries present in this material system.

scholarly journals Interface characteristics of n-n and p-n Ge/SiC heterojunction diodes formed by molecular beam epitaxy deposition

2010 ◽  
Vol 107 (12) ◽  
pp. 124512 ◽  
Author(s):  
P. M. Gammon ◽  
A. Pérez-Tomás ◽  
M. R. Jennings ◽  
V. A. Shah ◽  
S. A. Boden ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Interface Characteristics ◽  
Heterojunction Diodes
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