Optical Technique for Characterization of High Energy Ion Implanted Materials

1992 ◽  
Vol 268 ◽  
Author(s):  
Gustavo E Aizenberg ◽  
Pieter L Swart ◽  
Beatrys M Lacquet
Keyword(s):  
Refractive Index ◽  
Digital Signal ◽  
Amorphous Layer ◽  
High Energy ◽  
Optical Technique ◽  
Concentration Peak ◽  
Non Destructive ◽  
Reflectance Data ◽  
Ion Implanted

ABSTRACTA new method for the characterization of high energy ion-implanted materials has been developed. The refractive index and thickness of the amorphous layer produced by ion-implantation as well as the recrystallized layer formed by annealing of the ionimplanted samples can be determined by means of this non-destructive optical technique.For frequencies where the carriers do not respond, the measured reflectance is bilinear transformed, and further digital signal processing yields information about thickness and refractive index of the abovementioned layers. When working at optical frequencies where the carriers can respond to the electromagnetic field the physical position of the peak concentration follows directly from the processed reflectance data. Simulated and experimental data have been analyzed. The position of the boundaries between the amorphous, recrystallized and substrate zones, as well as the position of the carrier concentration peak can be determined for various steps of annealing. The algorithm has the advantage of being simple and time efficient.

Depth-profiled characterization of complex refractive index of ion implanted optically transparent polymers using multilayer calculations and reflectance data

Vacuum ◽  
2012 ◽  
Vol 86 (12) ◽  
pp. 1822-1827 ◽  
Author(s):  
Hristiyan Y. Stoyanov ◽  
Ivan L. Stefanov ◽  
Gichka G. Tsutsumanova ◽  
Stoyan C. Russev ◽  
Georgi B. Hadjichristov
Keyword(s):  
Refractive Index ◽  
Complex Refractive Index ◽  
Optically Transparent ◽  
Transparent Polymers ◽  
Reflectance Data ◽  
Ion Implanted

scholarly journals Automatic Characterization of the Refractive Index Profile of Fibers by Interferometry

2002 ◽  
Vol os-11 (1) ◽  
pp. 1558925002OS-01
Author(s):  
Han Seong Kim ◽  
Behnam Pourdeyhimi
Keyword(s):  
Refractive Index ◽  
Interference Fringe ◽  
Axial Direction ◽  
Refractive Index Profile ◽  
Path Difference ◽  
Fringe Field ◽  
Index Profile ◽  
Degree Of Orientation ◽  
Non Destructive

Interferometry provides a non-destructive method for examining the refractive index profile or the radial birefringence distribution within fibers. The key step in the interference data reduction involves the extraction of the refractive index profile along the axial direction of the fiber. The profile is due to the path difference between the fiber and the immersion liquid when a fiber is oriented perpendicular to the fringe field in an interference microscope. The refractive index provides a measure of the degree of optical anisotropy and is indicative of the degree of orientation of the structure. This is of particular interest to nonwovens because in thermally bonded nonwovens, the orientation plays a major role in how well the fibers are bonded and the ultimate properties of the fabric. Despite its long history, however, the interpretation of the interference fringe shift is not precisely defined. Consequently, the data are not reproducible from one laboratory to the next. We outline below an objective and quantitative method for precisely measuring a fiber's refractive index profile from a digitized image of the interference fringe. This new algorithm uses the Fast Fourier Transform (FFT) to remove the inherent noise present in the fiber interferogram and to aid in extracting the profile.

Characterization of Electronic Materials by Optical Reflectance Spectroscopy and Digital Signal Processing

1993 ◽  
Vol 324 ◽  
Author(s):  
Pieter L. Swart
Keyword(s):  
Refractive Index ◽  
Digital Signal ◽  
Refractive Index Profile ◽  
High Energy ◽  
Silicon On Insulator ◽  
Optical Methods ◽  
Material Structure ◽  
Index Profile ◽  
Multilayered Structures

AbstractIon implantation, diffusion, epitaxy, oxidation and ion exchange are common processing steps which alter the refractive index of dielectric media. These changes can be probed non-destructively by optical methods such as infrared and ultraviolet-visible spectroscopy, and related to material structure. An overview is given of the bilinear transform of reflectance and its use in conjunction with Fourier spectral analysis for thickness and refractive index estimation. Closed-form solutions are presently available for the bilinear transformed reflectance of heteroepitaxial multilayer structures, and for materials containing graded refractive index profiles. Salient features such as positions of interfaces and refractive index steps in multilayer media; depth and width of buried inhomogeneous layers; and width of a transition region between layers of constant refractive index can be determined directly. Under certain restrictive assumptions the bilinear transformed reflectance is shown to be invertible, which allows one to determine the complete refractive index profile. Examples are presented which illustrate the determination of thickness and refractive index of individual layers in multilayered structures. Specific examples include silicon-on-insulator, and Il-V heteroepitaxial structures such as InP/InGaAs/lnP. Analysis of the reflectance of medium to high energy implanted Si or GaAs allows determination of mean damage depth and standard deviation. The invertibility of the bilinear transformed reflectance is illustrated by estimating the refractive index profile of nitrogen implanted silicon.

Characterization of Ion-Implanted Aluminum and Iron by Spectroscopic Ellipsometry

1990 ◽  
Vol 201 ◽  
Author(s):  
J. S. Brodkin ◽  
W. Franzen ◽  
R. J. Culbertson ◽  
J. M. Williams
Keyword(s):  
Aluminum Alloy ◽  
Spectroscopic Ellipsometry ◽  
Optical Constants ◽  
Chromium Ions ◽  
Non Destructive ◽  
Non Destructive Characterization ◽  
Ion Implanted

AbstractThe change in the optical constants of aluminum alloy and iron samples caused by implantation with nitrogen and chromium ions has been investigated by spectroscopic ellipsometry. The objective is to develop a method for simple, non-destructive characterization of ion-implanted metals.

Infrared Reflectance Characterization of a GaAs-AlAs Superlattice

1986 ◽  
Vol 90 ◽  
Author(s):  
J. M. Zavada ◽  
G. K. Hubler ◽  
H. A. Jenkinson ◽  
W. D. Laidig
Keyword(s):  
Refractive Index ◽  
Dielectric Function ◽  
Absorption Edge ◽  
Reflectance Spectrum ◽  
Least Squares Method ◽  
Alloy Film ◽  
Infrared Reflectance ◽  
A Value ◽  
Non Destructive

ABSTRACTThe optical properties of a GaAs-AlAs superlattice have been examined using the non-destructive technique of infrared reflectance spectroscopy. Through this technique, the absorption edge, the effective superlattice refractive index, the thickness, and the optical grading of the superlattice-substrate were determined. Location of the absorption edge was made from the reflectance spectrum and showed general agreement with photoluminescence measurements. A more detailed analysis of the infrared spectra indicated the presence of a transition region between the substrate and the superlattice. Based on a non-linear least squares method for fitting the experimental data, a dispersion relation for the dielectric function was obtained. This dielectric function yielded a value for the superlattice refractive index that was lower than that of the corresponding, homogeneous, AlGaAs alloy film for wavelengths between 1.0 and 2.5 micrometers.

Non-Destructive Characterization of Activated Ion-Implanted Doping Profiles Based on Photomodulated Optical Reflectance

2011 ◽  
Author(s):  
Janusz Bogdanowicz ◽  
Trudo Clarysse ◽  
Alain Moussa ◽  
Jay Mody ◽  
Pierre Eyben ◽  
...  
Keyword(s):  
Optical Reflectance ◽  
Doping Profiles ◽  
Non Destructive ◽  
Non Destructive Characterization ◽  
Ion Implanted
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