Latchup characterization of high energy ion implanted new CMOS twin wells that comprised the BILLI (buried implanted layer for lateral isolation) and BL/CL (buried layer/connecting layer) structures

2002 ◽  
Author(s):  
Jong-Kwan Kim ◽  
Seong-Hyung Park ◽  
Young-Jong Lee ◽  
Yung-Kwon Sung
Keyword(s):  
High Energy ◽  
Layer Structures ◽  
Buried Layer ◽  
Ion Implanted

Optical Technique for Characterization of High Energy Ion Implanted Materials

1992 ◽  
Vol 268 ◽  
Author(s):  
Gustavo E Aizenberg ◽  
Pieter L Swart ◽  
Beatrys M Lacquet
Keyword(s):  
Refractive Index ◽  
Digital Signal ◽  
Amorphous Layer ◽  
High Energy ◽  
Optical Technique ◽  
Concentration Peak ◽  
Non Destructive ◽  
Reflectance Data ◽  
Ion Implanted

ABSTRACTA new method for the characterization of high energy ion-implanted materials has been developed. The refractive index and thickness of the amorphous layer produced by ion-implantation as well as the recrystallized layer formed by annealing of the ionimplanted samples can be determined by means of this non-destructive optical technique.For frequencies where the carriers do not respond, the measured reflectance is bilinear transformed, and further digital signal processing yields information about thickness and refractive index of the abovementioned layers. When working at optical frequencies where the carriers can respond to the electromagnetic field the physical position of the peak concentration follows directly from the processed reflectance data. Simulated and experimental data have been analyzed. The position of the boundaries between the amorphous, recrystallized and substrate zones, as well as the position of the carrier concentration peak can be determined for various steps of annealing. The algorithm has the advantage of being simple and time efficient.

scholarly journals Characterization of high-energy heavy-ion implanted InP crystals by a variety of techniques

Vacuum ◽  
1989 ◽  
Vol 39 (2-4) ◽  
pp. 177-182 ◽  
Author(s):  
Fulin Xiong ◽  
CW Nieh ◽  
TA Tombrello ◽  
DN Jamieson ◽  
T Vreeland
Keyword(s):  
Heavy Ion ◽  
High Energy ◽  
Ion Implanted

Thermal wave characterization of silicon which had been high energy ion implanted and furnace annealed

1989 ◽  
Vol 2 (1-3) ◽  
pp. 207-210 ◽  
Author(s):  
G.M. Crean ◽  
M.G. Somekh ◽  
S.J. Sheard ◽  
C.W. See
Keyword(s):  
Thermal Wave ◽  
High Energy ◽  
Ion Implanted

Depth-Dependent Character of Extended Defects in Ion-Implanted and RTA'd Si

1987 ◽  
Vol 104 ◽  
Author(s):  
Rodney A. Herring
Keyword(s):  
Electron Microscopy ◽  
Transmission Electron Microscopy ◽  
High Energy ◽  
Dislocation Network ◽  
Extended Defects ◽  
Transmission Electron ◽  
Buried Layer ◽  
The Difference ◽  
Defect Character ◽  
Ion Implanted

ABSTRACTThe character of extended defects formed in high-energy S-ion implanted and rapid thermal annealed (RTA'd) Si has been found by transmission electron microscopy (TEM) to be dependent on the depth at which the defects have formed in the ion-implanted regions. Si implanted with 6 MeV S-ions and RTA'd at 1000°C for 10 s showed a buried layer of extended defects with unfaulted loops towards the top and faulted loops towards the bottom. At higher S fluences, all the loops were unfaulted, some loops coalesced to form a dislocation network, and SiS precipitates were formed. At higher RTA temperatures, all the loops were unfaulted. A few possibilities that could explain the difference in defect character will be discussed.

HIGH ENERGY SYNCHROTRON X-RAY MICROSPECTROSCOPY FOR GEOCHEMICAL CHARACTERIZATION OF TERRESTRIAL AND EXTRATERRESTRIAL SAMPLES

2016 ◽  
Author(s):  
Antonio Lanzirotti ◽  
◽  
Stephen R. Sutton ◽  
Matt Newville ◽  
Jeffrey P. Fitts ◽  
...  
Keyword(s):  
High Energy ◽  
Geochemical Characterization ◽  
X Ray

scholarly journals Performance Analysis of Indentation Punch on High Energy Lithium Pouch Cells and Simulated Model Improvement

Polymers ◽  
2021 ◽  
Vol 13 (12) ◽  
pp. 1971
Author(s):  
Lihua Ye ◽  
Muhammad Muzamal Ashfaq ◽  
Aiping Shi ◽  
Syyed Adnan Raheel Shah ◽  
Yefan Shi
Keyword(s):  
Short Circuit ◽  
Lithium Ion ◽  
Mechanical Deformation ◽  
High Energy ◽  
State Of Charge ◽  
Punch Test ◽  
Short Course ◽  
Model Cell ◽  
The Impact

In this research, the aim relates to the material characterization of high-energy lithium-ion pouch cells. The development of appropriate model cell behavior is intended to simulate two scenarios: the first is mechanical deformation during a crash and the second is an internal short circuit in lithium-ion cells during the actual effect scenarios. The punch test has been used as a benchmark to analyze the effects of different state of charge conditions on high-energy lithium-ion battery cells. This article explores the impact of three separate factors on the outcomes of mechanical punch indentation experiments. The first parameter analyzed was the degree of prediction brought about by experiments on high-energy cells with two different states of charge (greater and lesser), with four different sizes of indentation punch, from the cell’s reaction during the indentation effects on electrolyte. Second, the results of the loading position, middle versus side, are measured at quasi-static speeds. The third parameter was the effect on an electrolyte with a different state of charge. The repeatability of the experiments on punch loading was the last test function analyzed. The test results of a greater than 10% state of charge and less than 10% state of charge were compared to further refine and validate this modeling method. The different loading scenarios analyzed in this study also showed great predictability in the load-displacement reaction and the onset short circuit. A theoretical model of the cell was modified for use in comprehensive mechanical deformation. The overall conclusion found that the loading initiating the cell’s electrical short circuit is not instantaneously instigated and it is subsequently used to process the development of a precise and practical computational model that will reduce the chances of the internal short course during the crash.

scholarly journals Development and characterization of Nb3Sn/Al2O3 superconducting multilayers for particle accelerators

2021 ◽  
Vol 11 (1) ◽  
Author(s):  
Chris Sundahl ◽  
Junki Makita ◽  
Paul B. Welander ◽  
Yi-Feng Su ◽  
Fumitake Kametani ◽  
...  
Keyword(s):  
High Performance ◽  
High Energy ◽  
Particle Accelerators ◽  
Quality Factors ◽  
Critical Fields ◽  
Linear Accelerators ◽  
Cross Sectional ◽  
Low Field ◽  
Superconducting Radio Frequency

AbstractSuperconducting radio-frequency (SRF) resonator cavities provide extremely high quality factors > 1010 at 1–2 GHz and 2 K in large linear accelerators of high-energy particles. The maximum accelerating field of SRF cavities is limited by penetration of vortices into the superconductor. Present state-of-the-art Nb cavities can withstand up to 50 MV/m accelerating gradients and magnetic fields of 200–240 mT which destroy the low-dissipative Meissner state. Achieving higher accelerating gradients requires superconductors with higher thermodynamic critical fields, of which Nb3Sn has emerged as a leading material for the next generation accelerators. To overcome the problem of low vortex penetration field in Nb3Sn, it has been proposed to coat Nb cavities with thin film Nb3Sn multilayers with dielectric interlayers. Here, we report the growth and multi-technique characterization of stoichiometric Nb3Sn/Al2O3 multilayers with good superconducting and RF properties. We developed an adsorption-controlled growth process by co-sputtering Nb and Sn at high temperatures with a high overpressure of Sn. The cross-sectional scanning electron transmission microscope images show no interdiffusion between Al2O3 and Nb3Sn. Low-field RF measurements suggest that our multilayers have quality factor comparable with cavity-grade Nb at 4.2 K. These results provide a materials platform for the development and optimization of high-performance SIS multilayers which could overcome the intrinsic limits of the Nb cavity technology.

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