Characterization of Metal-Oxide-Silicon Interface by Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
Yuzuru Ohji ◽  
Akira Uedono ◽  
Long Wei ◽  
Yasushi Tabuki ◽  
Shoichiro Tanigawa
Keyword(s):  
Electric Field ◽  
Positron Annihilation ◽  
Dielectric Breakdown ◽  
Positron Beam ◽  
Interface State ◽  
Carrier Injection ◽  
State Generation ◽  
Silicon Interface ◽  
Mos Device

ABSTRACTMOS device interfaces are investigated using carrier injection and monoenergetic positron beam experiments. Carrier injection reveals that the holes injected into gate S1O2 film seem to be the main cause of the interface state generation and the dielectric breakdown of thin-gate SiO2. Positron annihilation experiments show that the positron diffuse along the electric field in the Si and the gate SiO2 and are trapped in the interface region before annihilation. The obtained value of 5 at the SiO2/Si interface was 0.500 ±0.003. The behavior of holes in the SiO2 and SiO2/Si interface are simulated using the monoenergetic positron annihilation technique.

scholarly journals Oxide Degradation Effects in Dry Patterning of Resist Using Neutral Oxygen Beams

1992 ◽  
Vol 268 ◽  
Author(s):  
Walter E. Mlynko ◽  
Srinandan R. Kasi ◽  
Dennis M. Manos
Keyword(s):  
Dielectric Breakdown ◽  
Electrical Characterization ◽  
Plasma Source ◽  
Interface State ◽  
State Density ◽  
Low Energy ◽  
Carrier Injection ◽  
Polysilicon Gate ◽  
Atomic Beams ◽  
Novel Processing

ABSTRACTNovel processing methods are being studied to address the highly selective and directional etch requirements of the ULSI manufacturing era; neutral molecular and atomic beams are two promising candidates. In this study, the potential of 5 eV neutral atomic oxygen beams for dry development of photoresist is demonstrated for application in patterning of CMOS devices. The patterning of photoresist directly on polysilicon gate layers enables the use of a self-contained dry processing strategy, with oxygen beams for resist etching and chlorine beams for polysilicon etching. Exposure to such reactive low-energy species and to the UV radiation from the line-of-sight, high-density plasma source can, however, alter MOSFET gate oxide quality, impacting device performance and reliability. We have studied this process-related device integrity issue by subjecting polysilicon gate MOS structures to exposure treatments of 5–20 eV oxygen beams similar to those used for resist patterning. Electrical characterization shows a significant increase in the oxide trapped charge (30–90x) and interface state density (30–60x) upon low-energy exposure. Current-voltage(IV) and dielectric breakdown characterization show increased low-field leakage characteristics for the same exposure. High-field electron injection studies reveal that the 0.25–V to 0.5–V negative flatband shifts (measured after oxygen beam exposure) can be partially annealed by carrier injection. This could be due to positive charge annihilation or electron trapping, or some combination of both. SEM and electrical analysis of structures exposed to neutral beam processing are presented along with the results of thermal annealing treatments.

scholarly journals Characterisation of dispersive systems using a coherer

2002 ◽  
Vol 34 (1) ◽  
pp. 101-108
Author(s):  
Pantelija Nikolic ◽  
S. Djuric ◽  
K. Radulovic ◽  
D. Vasiljevic-Radovic ◽  
M.V. Nikolic ◽  
...  
Keyword(s):  
Electromagnetic Field ◽  
Electric Field ◽  
High Frequency ◽  
Dielectric Breakdown ◽  
Activation Time ◽  
Average Dimension ◽  
High Frequency Electromagnetic Field ◽  
Dc Electric Field ◽  
Electronic Design

The possibility of characterization of aluminium powders using a horizontal coherer has been considered. Al powders of known dimension were treated with a high frequency electromagnetic field or with a DC electric field, which were increased until a dielectric breakdown occurred. Using a multifunctional card PC-428 Electronic Design and a suitable interface between the coherer and PC, the activation time of the coherer was measured as a function of powder dimension and the distance between the coherer electrodes. It was also shown that the average dimension of powders of unknown size could be determined using the coherer.

Characterization of Diverse Gate Oxides on 4H-SiC 3D Trench-MOS Structures

2013 ◽  
Vol 740-742 ◽  
pp. 691-694 ◽  
Author(s):  
Christian T. Banzhaf ◽  
Michael Grieb ◽  
Achim Trautmann ◽  
Anton J. Bauer ◽  
Lothar Frey
Keyword(s):  
Silicon Dioxide ◽  
Dielectric Breakdown ◽  
Interface State ◽  
Oxide Semiconductor ◽  
Breakdown Field ◽  
Flat Band ◽  
Mos Devices ◽  
State Densities ◽  
Mos Structures

This study focuses on the characterization of silicon dioxide (SiO2) layers, either thermally grown or deposited on trenched 100 mm 4H-silicon carbide (SiC) wafers. We evaluate the electrical properties of silicon dioxide as a gate oxide (GOX) for 3D metal oxide semiconductor (MOS) devices, such as Trench-MOSFETs. Interface state densities (DIT) of 1*1011cm-2eV-1under flat band conditions were determined using the hi-lo CV-method [1]. Furthermore, current-electric field strength (IE) measurements have been performed and are discussed. Trench-MOS structures exhibited dielectric breakdown field strengths up to 10 MV/cm.

Ultra-thin Gate Oxide Prepared by Nitridation in ND3 for MOS Device Applications

2000 ◽  
Vol 611 ◽  
Author(s):  
Hyungshin Kwon ◽  
Hyunsang Hwang
Keyword(s):  
Gate Dielectric ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Interface State ◽  
Nitridation Process ◽  
Reliability Characteristics ◽  
State Generation ◽  
Device Applications ◽  
Thin Gate Oxide ◽  
Mos Device

ABSTRACTThe electrical and reliability characteristics of ultra-thin gate oxide, annealed in ND3 gas, have been investigated. Compared with a control oxide, which had been annealed in NH3, the ND3-nitrided oxide exhibits a significant reduction in charge trapping and interface state generation. The improvement of electrical and reliability characteristics can be explained by the strong Si-D bond at the Si/SiO2 interface. This nitridation process of gate dielectric using ND3 has considerable potential for future ultra large scaled integration (ULSI) device applications.

Ultrathin Gate Oxide Prepared by Oxidation in D2O for Mos Device Applications

1999 ◽  
Vol 567 ◽  
Author(s):  
Hyojune Kim ◽  
Hyunsang Hwang
Keyword(s):  
Deuterium Oxide ◽  
Charge Trapping ◽  
Gate Oxide ◽  
Interface State ◽  
Reliability Characteristics ◽  
State Generation ◽  
Device Applications ◽  
Sims Analysis ◽  
Secondary Ion ◽  
Mos Device

ABSTRACTWe present a novel gate oxidation process using D2O (deuterium oxide) as an oxidizing gas. The electrical and reliability characteristics of ultrathin gate oxide grown in D2O ambient have been investigated. Compared with a control oxide grown in H2O, a oxide grown in D2O exhibits a significant reduction of charge trapping and interface state generation. Based on a secondary ion mass spectroscopy (SIMS) analysis; we found a deuterium rich-layer at the Si/SiO2 interface. The improvement of electrical and reliability characteristics can be explained by the deuterium incorporation at the Si/SiO2 interface.

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