Characterization of Defects in Heavily Si-Doped GaAs by A Monoenergetic Positron Beam

1992 ◽  
Vol 262 ◽  
Author(s):  
A. Uedono ◽  
Y. Ujihira ◽  
L. Wei ◽  
S. Tanigawa
Keyword(s):  
Molecular Beam ◽  
Positron Lifetime ◽  
Positron Beam ◽  
Major Type ◽  
Doppler Broadening ◽  
High Concentration ◽  
Native Defects ◽  
Free Carriers ◽  
Si Doped

ABSTRACTNative defects in Si-doped, Zn-doped and undoped GaAs grown by horizontal Bridgman (HB) method and molecular beam epitaxiy (MBE) were studied by a monoenergetic positron beam. Positron lifetime spectra and Doppler broadening profiles were also measured by using energetic positrons. It was found that monovacancies were usually found in Si-doped HB-GaAs, however, divacancies were created in a specimen with low impurity concentration. For Zn-doped HB-GaAs, interstitial clusters were found to be major type of defects. The high concentration of monovacancies and of divacancies coexist in heavily Si-doped MBE-GaAs. These vacancy-complexes were found to act to reduce the concentration of free carriers.

scholarly journals Toward a European Network of Positron Laboratories

Nukleonika ◽  
2015 ◽  
Vol 60 (4) ◽  
pp. 733-739 ◽  
Author(s):  
Grzegorz P. Karwasz ◽  
Roberto S. Brusa ◽  
Werner Egger ◽  
Olga V. Ogorodnikova
Keyword(s):  
Water Vapor ◽  
Positron Lifetime ◽  
Complex Dynamics ◽  
Positron Beam ◽  
Doppler Broadening ◽  
European Network ◽  
Lifetime Measurements ◽  
Positron Beams ◽  
Positron Lifetimes ◽  
Material Studies

AbstractSome applications of controlled-energy positron beams in material studies are discussed. In porous organic polysilicates, measurements of 3γ annihilation by Doppler broadening (DB) method at the Trento University allowed to trace pore closing and filling by water vapor. In silicon coimplanted by He+and H+, DB data combined with positron lifetime measurements at the München pulsed positron beam allowed to explain Si blistering. Presently measured samples of W for applications in thermonuclear reactors, irradiated by W+and electrons, show vast changes of positron lifetimes, indicating complex dynamics of defects.

Optical characterization of Si‐doped InAs1−xSbxgrown on GaAs and GaAs‐coated Si by molecular‐beam epitaxy

1991 ◽  
Vol 69 (4) ◽  
pp. 2536-2542 ◽  
Author(s):  
W. Dobbelaere ◽  
J. De Boeck ◽  
P. Van Mieghem ◽  
R. Mertens ◽  
G. Borghs
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Characterization ◽  
Si Doped

A Study of Defects in Czochralski-Grown Silicon by Positron Annihilation Spectroscopy

1992 ◽  
Vol 262 ◽  
Author(s):  
S. C. Sharma ◽  
N. Hozhabri ◽  
R. G. Hyer ◽  
T. Hossain ◽  
S. Kim ◽  
...  
Keyword(s):  
Positron Lifetime ◽  
Single Crystal Silicon ◽  
Positron Beam ◽  
Positron Annihilation Spectroscopy ◽  
Doppler Broadening ◽  
Crystal Silicon ◽  
Different Depths ◽  
Positron Lifetime Spectroscopy ◽  
Doppler Broadening Spectra ◽  
Variable Energy

ABSTRACTWe have studied defects in Cz-grown single crystal silicon by utilizing a variable energy positron beam and positron lifetime spectroscopy in conjunction with surface photovoltage measurements. We present results for the depth profile of defects obtained from the Doppler broadening spectra measured by implanting variable energy positrons at different depths ranging from the surface down to ∼ 1 /xm deep. We have also measured positron lifetime spectra at different locations on a wafer and have obtained a radial variation in the density of the vacancy-type defects.

scholarly journals Positron Annihilation Spectroscopy as a Diagnostic Tool for the Study of LiCoO2 Cathode of Lithium-Ion Batteries

2021 ◽  
Vol 6 (3) ◽  
pp. 28
Author(s):  
Gioele Pagot ◽  
Valerio Toso ◽  
Bernardo Barbiellini ◽  
Rafael Ferragut ◽  
Vito Di Noto
Keyword(s):  
Lithium Ion Batteries ◽  
Positron Annihilation ◽  
Positron Lifetime ◽  
Lithium Ion ◽  
Positron Annihilation Spectroscopy ◽  
State Of Charge ◽  
Doppler Broadening ◽  
Li Ion Batteries ◽  
Li Ion

Positron annihilation spectroscopy using lifetime and Doppler broadening allows the characterization of the lithiation state in LiCoO2 thin film used in cathode of lithium-ion batteries. The lifetime results reflect positron spillover because of the presence of graphite in between the oxide grains in real cathode Li-ion batteries. This spillover produces an effect in the measured positron parameters which are sensitive to delocalized electrons from lithium atoms as in Compton scattering results. The first component of the positron lifetime corresponds to a bulk-like state and can be used to characterize the state of charge of the cathode while the second component represents a surface state at the grain-graphite interface.

Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy

2000 ◽  
Author(s):  
Dao Hua Zhang ◽  
X. Z. Wang ◽  
Hai Qun Zheng ◽  
Soon Fatt Yoon ◽  
Chan Hin Kam
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Doped
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