Growth by molecular beam epitaxy and electrical characterization of Si‐doped zinc blende GaN films deposited on β‐SiC coated (001) Si substrates

1994 ◽  
Vol 65 (1) ◽  
pp. 91-93 ◽  
Author(s):  
J. G. Kim ◽  
A. C. Frenkel ◽  
H. Liu ◽  
R. M. Park
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Si Substrates ◽  
Zinc Blende ◽  
Si Doped

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Growth and characterization of GaAs layers on Si substrates by migration‐enhanced molecular beam epitaxy

1988 ◽  
Vol 53 (24) ◽  
pp. 2435-2437 ◽  
Author(s):  
Jae‐Hoon Kim ◽  
John K. Liu ◽  
Gouri Radhakrishnan ◽  
Joseph Katz ◽  
Shiro Sakai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates

Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique

2013 ◽  
Vol 103 (9) ◽  
pp. 092103 ◽  
Author(s):  
Vl. Kolkovsky ◽  
Z. R. Zytkiewicz ◽  
M. Sobanska ◽  
K. Klosek
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Gan Nanowires

Electrical characterization of gallium planar‐doped ZnSe grown by molecular‐beam epitaxy

1989 ◽  
Vol 66 (9) ◽  
pp. 4295-4300 ◽  
Author(s):  
S. M. Shibli ◽  
M. C. Tamargo ◽  
J. L. De Miguel ◽  
B. J. Skromme ◽  
R. E. Nahory ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization

scholarly journals Pulse source injection molecular beam epitaxy and characterization of nano-scale thin GaN layers on Si substrates

2006 ◽  
Vol 200 (10) ◽  
pp. 3230-3234 ◽  
Author(s):  
W. Tong ◽  
M. Harris ◽  
B.K. Wagner ◽  
J.W. Yu ◽  
H.C. Lin ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Pulse Source ◽  
Si Substrates ◽  
Nano Scale

scholarly journals Structural, band and electrical characterization of β-(Al0.19Ga0.81)2O3 films grown by molecular beam epitaxy on Sn doped β-Ga2O3 substrate

2019 ◽  
Vol 126 (9) ◽  
pp. 095702 ◽  
Author(s):  
Abhishek Vaidya ◽  
Jith Sarker ◽  
Yi Zhang ◽  
Lauren Lubecki ◽  
Joshua Wallace ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization
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