A Study of Defects in Czochralski-Grown Silicon by Positron Annihilation Spectroscopy
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ABSTRACTWe have studied defects in Cz-grown single crystal silicon by utilizing a variable energy positron beam and positron lifetime spectroscopy in conjunction with surface photovoltage measurements. We present results for the depth profile of defects obtained from the Doppler broadening spectra measured by implanting variable energy positrons at different depths ranging from the surface down to ∼ 1 /xm deep. We have also measured positron lifetime spectra at different locations on a wafer and have obtained a radial variation in the density of the vacancy-type defects.
2004 ◽
Vol 19
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pp. 3951-3959
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2014 ◽
Vol 880
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pp. 134-140
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2011 ◽
Vol 415-417
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pp. 1042-1045
2005 ◽
Vol 475-479
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pp. 2123-2126
1992 ◽
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pp. 1993-1996
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2014 ◽