A Study of Defects in Czochralski-Grown Silicon by Positron Annihilation Spectroscopy

1992 ◽  
Vol 262 ◽  
Author(s):  
S. C. Sharma ◽  
N. Hozhabri ◽  
R. G. Hyer ◽  
T. Hossain ◽  
S. Kim ◽  
...  

ABSTRACTWe have studied defects in Cz-grown single crystal silicon by utilizing a variable energy positron beam and positron lifetime spectroscopy in conjunction with surface photovoltage measurements. We present results for the depth profile of defects obtained from the Doppler broadening spectra measured by implanting variable energy positrons at different depths ranging from the surface down to ∼ 1 /xm deep. We have also measured positron lifetime spectra at different locations on a wafer and have obtained a radial variation in the density of the vacancy-type defects.

2004 ◽  
Vol 19 (23) ◽  
pp. 3951-3959 ◽  
Author(s):  
CORINE BAS ◽  
N. DOMINIQUE ALBÉROLA ◽  
MARIE-FRANCE BARTHE ◽  
JÉRÉMIE De BAERDEMAEKER ◽  
CHARLES DAUWE

A series of dense copolyimide membranes was characterized using positron annihilation spectroscopy. The positron annihilation lifetime spectroscopy performed on film with a classical positron source gives informations on the positronium fraction formed and also on the hole size within the film. The Doppler broadening spectra (DBS) of the gamma annihilation rays coupled with a variable energy positron beam allow the microstructural analyses as a function of the film depth. Experimental data were also linked to the chemical structure of the polyimides. It was found that the presence of the fluorine atoms strongly affects the positron annihilitation process and especially the DBS responses.


2021 ◽  
Vol 247 ◽  
pp. 08012
Author(s):  
A. I. Hawari ◽  
M. Liu ◽  
Q. Cai

The PULSTAR is a 1-MWth nuclear research reactor located at North Carolina State University. It is fueled by uranium dioxide assemblies enriched to 4% or 6% in U-235 and is currently under licensing for operation at 2-MWth power. The PULSTAR is a center for irradiation testing and pre/post irradiation examination of materials. Among its unique capabilities are positron annihilation spectroscopy (PAS) and neutron powder diffraction (NPD) facilities. The PAS facility provides an intense positron beam reaching 6 × 108 e+/s, which drives two spectrometers; the e+-PAS and the Ps-PAS, used for studies of defects in thin film materials. A Na-22 bulk PAS system is also operational, which is used for studying millimeter scale materials. All spectrometers are capable of performing Doppler Broadening Spectroscopy (DBS) and Positron Annihilation Lifetime Spectroscopy (PALS). To date, the PAS systems have been used to characterize various materials (unirradiated and irradiated) that include graphite, soft matter, and metal-organic frameworks (MOF). The NPD facility uses a double focusing single crystal silicon rotating monochromator producing neutron beams with different energies. A position sensitive detection bank covers a scattering angle of 5°-125°. The facility is used in the examination of unirradiated and irradiated materials including graphitic materials, magnetic materials without rare-earth elements, and anode materials used in lithium batteries. The collected diffraction patterns can be processed to produce atomic pair distribution functions. The PAS and NPD facilities are available through user programs including the US DOE’s Nuclear Science User Facilities (NSUF) and the US NSF’s Research Triangle Nanotechnology Network (RTNN).


2014 ◽  
Vol 880 ◽  
pp. 134-140 ◽  
Author(s):  
Roman S. Laptev ◽  
Yuriy S. Bordulev ◽  
Viktor N. Kudiiarov ◽  
Andrey M. Lider ◽  
Georgy V. Garanin

The experimental study of the structure of commercially pure titanium after saturation with hydrogen from the gas phase by means of positron lifetime spectroscopy (PLS) and Doppler broadening spectroscopy (DBS) was carried out. In the result of penetration and accumulation of hydrogen, significant changes of annihilation characteristics occurred due to the defect structure changing. The investigated samples contained hydrogen in concentrations varying from 0 to 0.961 wt.%. Several stages of hydrogen interaction with the metal structure were revealed.


2011 ◽  
Vol 415-417 ◽  
pp. 1042-1045
Author(s):  
Wen Deng ◽  
Zhen Quan Lei ◽  
Jiao Ling Zhao ◽  
Yan Qiong Lu ◽  
Ding Kang Xiong

The effect of the Fe2O3dopant on the electronic densities and the electrical properties has been studied in a ZnO-Bi2O3-SnO2-Co2O3-MnO2-TiO2-Ni2O3-Fe2O3system by the measurements of positron lifetime spectra, coincidence Doppler broadening spectra and current-voltage characteristics. The results show that the 3d electron signal in the spectrum of the varistor increases with the Fe2O3content. The addition of small amount of Fe2O3into the ZnO-based varistor leads to an increase in the donor concentration in the bulk and the defects in the varistor. As the Fe2O3content increased, the threshold voltage (VT) and the nonlinear coefficient (α) of the varistor decreased monotonously.


2005 ◽  
Vol 475-479 ◽  
pp. 2123-2126
Author(s):  
Yu Cheng Wu ◽  
W. Sprengel ◽  
K. Reimann ◽  
K.J. Reichle ◽  
D. Goll ◽  
...  

The defect distributions have been investigated using positron lifetime spectroscopy on amorphous and nanocrystalline Pr2Fe14B samples, produced by melt-spinning and nanocrystallization route. The main two components can be concluded that were ascribed to vacancy-like defects in the intergranular layers or the interfaces, and microvoids or large free volumes with size compared to several missing atoms at the interactions of the atomic aggregates or the crystallites. The remarkable changes in the positron lifetimes from the amorphous structure to the nanocrystalline with varied sizes can be interpreted, indicating that the structural transformation and the grain growth induce the defect distribution changes occurring at the interfaces with different shape and size.


1992 ◽  
Vol 105-110 ◽  
pp. 1993-1996 ◽  
Author(s):  
Ryoichi Suzuki ◽  
Yoshinori Kobayashi ◽  
Tomohisa Mikado ◽  
Hideaki Ohgaki ◽  
M. Chiwaki ◽  
...  

1999 ◽  
Vol 7 (3-4) ◽  
pp. 259-267 ◽  
Author(s):  
A. Broska ◽  
J. Wolff ◽  
M. Franz ◽  
Th. Hehenkamp

1989 ◽  
Vol 67 (8) ◽  
pp. 813-817
Author(s):  
P. Hautojārvi

The use of positron annihilation to study defects in semiconductors is discussed. Positron-lifetime spectroscopy reveals As vacancies in as-grown GaAs and gives information on ionization levels. The vacancy profiles in ion-implanted Si are investigated by slow positron beam.


1998 ◽  
Vol 540 ◽  
Author(s):  
Werner Puff ◽  
Adam G. Balogh ◽  
Peter Mascher

AbstractAnnealing of defects in proton irradiated bulk n-type 6H- and semi-insulating 4H-SiC has been investigated by positron lifetime spectroscopy and Doppler-broadening measurements. For the n-type sample radiation induced defects in dependence of the proton fluence were studied. Three or four annealing stages were found, during which the formation of larger defect complexes could be observed.


Sign in / Sign up

Export Citation Format

Share Document