Optical characterization of Si‐doped InAs1−xSbxgrown on GaAs and GaAs‐coated Si by molecular‐beam epitaxy

1991 ◽  
Vol 69 (4) ◽  
pp. 2536-2542 ◽  
Author(s):  
W. Dobbelaere ◽  
J. De Boeck ◽  
P. Van Mieghem ◽  
R. Mertens ◽  
G. Borghs
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Characterization ◽  
Si Doped

Optical Characterization of 100 eV C+ Ion Doped GaAs

1993 ◽  
Vol 300 ◽  
Author(s):  
Tsutomu Iida ◽  
Yunosuke Makita ◽  
Shinji Kimura ◽  
Stefan Winter ◽  
Akimasa Yamada ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Hall Effect ◽  
Molecular Beam ◽  
Ion Beam ◽  
Optical Characterization ◽  
Mbe Growth ◽  
Impurity Doping ◽  
Specific Emissions ◽  
Hall Effect Measurements

ABSTRACTLow energy (100 eV) impinging of carbon (C+) ions was made during molecular beam epitaxy (MBE) of GaAs using combined ion beam and molecular beam epitaxy (CIBMBE) technologies for the growth temperature ( Tg ) between 500 °C and 590 °C. 2 K photoluminescence (PL), Raman scattering and Hall effect measurements were made for the samples. In the PL spectra two specific emissions, “g” and [g-g], were observed which are closely associated with acceptor impurities. PL and Hall effect measurements indicate that C atoms were very efficiently introduced during MBE growth by CIBMBE and were both optically and electrically well activated as acceptors even at Tg=500 °C. The results reveal that defect-free impurity doping without subsequent annealing can be achieved by CIBMBE method.

Structural and optical characterization of alternately strained GaAs/GaP/GaAs/InP superlattices grown by atomic layer molecular beam epitaxy

1993 ◽  
Vol 127 (1-4) ◽  
pp. 623-626 ◽  
Author(s):  
A. Mazuelas ◽  
J. Meléndez ◽  
P.S. Domínguez ◽  
M. Garriga ◽  
C. Ballesteros ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Atomic Layer ◽  
Optical Characterization

scholarly journals OPTICAL CHARACTERIZATION OF Nd3+ DOPED CaF2 LAYERS GROWN BY MOLECULAR BEAM EPITAXY

1991 ◽  
Vol 01 (C7) ◽  
pp. C7-297-C7-301
Author(s):  
L. E. BAUSA ◽  
R. LEGROS ◽  
A. MUNOZ-YAGUE
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Characterization

Structural and optical characterization of GaNAs layers grown by molecular beam epitaxy

2006 ◽  
Vol 24 (3) ◽  
pp. 1591 ◽  
Author(s):  
A. Pulzara-Mora ◽  
M. Meléndez-Lira ◽  
C. Falcony-Guajardo ◽  
M. López-López ◽  
M. A. Vidal ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Characterization

Optical characterization of (In,Ga)(As,N) thin films grown by molecular beam epitaxy on non-(100) GaAs substrates

2007 ◽  
Vol 301-302 ◽  
pp. 552-555 ◽  
Author(s):  
J. Ibáñez ◽  
M. Henini ◽  
R. Kudrawiec ◽  
J. Misiewicz ◽  
M. Schmidbauer ◽  
...  
Keyword(s):  
Thin Films ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Optical Characterization ◽  
Gaas Substrates
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