Characterization of Si-doped GaInAsP/GaAs grown by solid source molecular beam epitaxy

2000 ◽  
Author(s):  
Dao Hua Zhang ◽  
X. Z. Wang ◽  
Hai Qun Zheng ◽  
Soon Fatt Yoon ◽  
Chan Hin Kam
1991 ◽  
Vol 69 (4) ◽  
pp. 2536-2542 ◽  
Author(s):  
W. Dobbelaere ◽  
J. De Boeck ◽  
P. Van Mieghem ◽  
R. Mertens ◽  
G. Borghs

1991 ◽  
Vol 30 (Part 1, No. 11A) ◽  
pp. 2863-2867 ◽  
Author(s):  
Long Wei ◽  
Yang-Koo Cho ◽  
Chisei Dosho ◽  
Toshikazu Kurihara ◽  
Shoichiro Tanigawa

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.


2017 ◽  
Vol 9 (36) ◽  
pp. 30786-30796 ◽  
Author(s):  
Yoon-Ho Choi ◽  
Dong-Hyeok Lim ◽  
Jae-Hun Jeong ◽  
Dambi Park ◽  
Kwang-Sik Jeong ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document