Over‐relaxation of misfit strain in heavily carbon‐doped GaAs grown by metalorganic molecular beam epitaxy after annealing

1995 ◽  
Vol 67 (8) ◽  
pp. 1104-1106 ◽  
Author(s):  
Hyunchul Sohn ◽  
E. R. Weber ◽  
Shinji Nozaki ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Misfit Strain ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy

P-Type Carbon-Doped InGaAs Grown by Metalorganic Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 9B) ◽  
pp. L1609-L1611 ◽  
Author(s):  
Jun-ichi Shirakashi ◽  
Takumi Yamada ◽  
Ming Qi ◽  
Shinji Nozaki ◽  
Kiyoshi Takahashi ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

Effect of misfit strain on physical properties of InGaP grown by metalorganic molecular‐beam epitaxy

1990 ◽  
Vol 68 (1) ◽  
pp. 107-111 ◽  
Author(s):  
Kazunari Ozasa ◽  
Masaaki Yuri ◽  
Shigehisa Tanaka ◽  
Hiroyuki Matsunami
Keyword(s):  
Molecular Beam Epitaxy ◽  
Physical Properties ◽  
Molecular Beam ◽  
Misfit Strain ◽  
Metalorganic Molecular Beam Epitaxy

Heavily Carbon-Doped P-Type InGaAs Grown by Metalorganic Molecular Beam Epitaxy

1991 ◽  
Vol 30 (Part 2, No. 5A) ◽  
pp. L875-L875 ◽  
Author(s):  
Takeshi Akatsuka ◽  
Ryuji Miyake ◽  
Shinji Nozaki ◽  
Takumi Yamada ◽  
Makoto Konagai ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy ◽  
P Type

Structural Aspects of Heavily Carbon-Doped GaAs Grown by Metalorganic Molecular Beam Epitaxy (MOMBE)

1992 ◽  
Vol 31 (Part 2, No. 3B) ◽  
pp. L296-L298 ◽  
Author(s):  
Isao Fujimoto ◽  
Shiro Nishine ◽  
Takumi Yamada ◽  
Makoto Konagai ◽  
Kiyoshi Takahashi
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Carbon Doped ◽  
Metalorganic Molecular Beam Epitaxy ◽  
Structural Aspects
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