ABSTRACTElectronic defects were introduced at and around the Si-SiO2 interface by exposing thermally-oxidized silicon samples to a 16 keV Si ion beam in an ion implanter. The oxide thickness was 350 Å. Following Si self-implantation, hydrogenation was carried out at room temperature by a 400 eV hydrogen ion beam from a Kaufman source. Experimental results obtained from the admittance-voltage-frequency measurements of the metal-oxide-silicon structures indicated significant passivation of the ion-beam-induced defects.