Delayed Field Transient Photocurrent Measurements in a-Si:H

1992 ◽  
Vol 258 ◽  
Author(s):  
Homer Antoniadis ◽  
E. A. Schiff
Keyword(s):  
Applied Voltage ◽  
Delay Time ◽  
Deep Level ◽  
Time Of Flight ◽  
Laser Flash ◽  
Field Technique ◽  
Transient Photocurrent

ABSTRACTWe have measured the transient photocurrent in “time-of-flight” structures of a-Si:H using bias voltages applied following photocarrier generation by a laser flash. The delayed field technique appears promising both as a probe of the deep level distribution and also of photocarrier thermalization. We describe a simplified theory for the delayed field transients including the effects of the delay time and the magnitude of the applied voltage. The theory accounts for the measurements adequately.

Analysis of time-of-flight transient photocurrent in organic semiconductors with coplanar-blocking-electrodes configuration

2008 ◽  
Vol 516 (9) ◽  
pp. 2595-2599 ◽  
Author(s):  
Takao Yoshikawa ◽  
Takashi Nagase ◽  
Takashi Kobayashi ◽  
Shuichi Murakami ◽  
Hiroyoshi Naito
Keyword(s):  
Organic Semiconductors ◽  
Time Of Flight ◽  
Transient Photocurrent

scholarly journals Investigation of ion characteristics in CO2laser irradiating preformed tin-droplet plasma

2016 ◽  
Vol 34 (3) ◽  
pp. 552-561 ◽  
Author(s):  
Z. Chen ◽  
X. Wang ◽  
D. Zuo ◽  
J. Wang
Keyword(s):  
Kinetic Energy ◽  
Pulse Laser ◽  
Delay Time ◽  
Laser Energy ◽  
Time Of Flight ◽  
Average Kinetic Energy ◽  
Peak Structure ◽  
Optimal Delay ◽  
Preformed Plasma ◽  
Twin Peak

AbstractComparative study of CO2laser-produced tin-droplet plasma with and without pre-pulse laser has been presented. A pre-pulse laser and the CO2laser was combined and focused to tin-droplet with a diameter of 180 µm. The emitted Sn ions were detected by several Faraday cups to obtain angular distribution of ions in the laser-produced tin-droplet plasma. The influence of pre-pulse laser energy and delay time between pumping laser and pre-pulse laser on the ion characteristics was investigated. It is illustrated that ion average kinetic energy from CO2laser-produced plasma (LPP) can be reduced when the tin-droplet target has been replaced by the preformed Sn plasma. The obtained optimal delay time with the lowest ion average kinetic energy is about hundreds of nanoseconds. The ion time-of-flight spectra show a twin peak structure in laser-irradiating preformed Sn plasma. And a superimposed Maxwell–Boltzmann (MB) distribution is proposed to describe this twin peak ion time-of-flight spectra. The fitting results quite agree with the raw ion time-of-flight spectra in current experiment. Then, the fitted plasma temperatures and mass-center velocities with various delay times in laser-irradiating preformed plasma are obtained, and the fitted plasma temperatures can be comparable with ion average kinetic energy in double-pulse LPP, which justified the rationality using this superimposed MB distribution.

Two spectrometers for threshold photoelectron coincidence studies of double photoionization

1996 ◽  
Vol 74 (11-12) ◽  
pp. 856-860 ◽  
Author(s):  
M. Hochlaf ◽  
H. Kjeldsen ◽  
F. Penent ◽  
R. I. Hall ◽  
P. Lablanquie ◽  
...  
Keyword(s):  
Time Of Flight ◽  
Double Ionization ◽  
Coincidence Measurement ◽  
Ionization Threshold ◽  
Zero Energy ◽  
Field Technique ◽  
Double Photoionization

We present here two simple instruments for the study of double photoionization processes at threshold. They rely on the coincidence measurement of two near-zero energy electrons, which are collected by a penetrating field technique, and energy selected either by time-of-flight analysis (1st setup) or by electrostatic filtering in a hemispherical analyzer (2nd setup). Performance of the apparatus is demonstrated on Ar threshold double photoionization, and used to show the importance of two step double photoionization routes at Ar and Kr double ionization threshold.

scholarly journals PENGUKURAN LAJU ALIRAN UDARA DALAM PIPA SECARA SIMULTAN DENGAN TRANSDUSER GANDA ULTRASONIK

2021 ◽  
Vol 4 (1) ◽  
pp. 15
Author(s):  
Lalu Febrian Wiranata
Keyword(s):  
Delay Time ◽  
Time Of Flight ◽  
Hot Wire ◽  
The Difference ◽  
The One

This paper aims to modification the transducer ultrasonic for measuring the distance to develop measure time of flight in the pipe with simultaneous method. To implement the application, we try to develop the microcontroller with one command transmitter and one command receiver in the same time, different from the conventional way, the transmitter and receiver work with consecutively. We try to reduce the delay time in two different transducers. In industrial, the symmetries profile must be ensured the profile always laminar. In this research, we try to use one path configuration. The result with the reference hot wire, we got the 27.76 percentage the difference of result. This is because the hot wire can measure the one path of flow in the one way of dot point.

Anomalous behaviour in the capacitance of selenium Schottky diodes

1988 ◽  
Vol 66 (2) ◽  
pp. 168-174 ◽  
Author(s):  
C. H. Champness ◽  
J. Pan
Keyword(s):  
Valence Band ◽  
Barrier Height ◽  
Applied Voltage ◽  
Deep Level ◽  
Schottky Diodes ◽  
Anomalous Behaviour

Measurements on Se–Tl, Se–Bi, and Se–Au Schottky diodes, fabricated by evaporation of thallium, bismuth, or gold respectively, on a layer of crystallized selenium have shown an anomalous minimum of incremental capacitance with variation of applied voltage at a frequency below about 1 kHz. The voltage of the minimum varies consistently with the estimated barrier height of the junctions and suggests that it arises from a deep level located some 0.4 eV above the valence band of trigonal selenium. The disappearance of the effect with increasing frequency, while qualitatively consistent with this interpretation, indicates the level to be at 0.6 eV.

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