Hole mobility within arylamine-containing polyfluorene copolymers: A time-of-flight transient-photocurrent study

2007 ◽  
Vol 75 (3) ◽  
Author(s):  
R. U. A. Khan ◽  
D. Poplavskyy ◽  
T. Kreouzis ◽  
D. D. C. Bradley
Keyword(s):  
Time Of Flight ◽  
Hole Mobility ◽  
Transient Photocurrent

Delayed Field Transient Photocurrent Measurements in a-Si:H

1992 ◽  
Vol 258 ◽  
Author(s):  
Homer Antoniadis ◽  
E. A. Schiff
Keyword(s):  
Applied Voltage ◽  
Delay Time ◽  
Deep Level ◽  
Time Of Flight ◽  
Laser Flash ◽  
Field Technique ◽  
Transient Photocurrent

ABSTRACTWe have measured the transient photocurrent in “time-of-flight” structures of a-Si:H using bias voltages applied following photocarrier generation by a laser flash. The delayed field technique appears promising both as a probe of the deep level distribution and also of photocarrier thermalization. We describe a simplified theory for the delayed field transients including the effects of the delay time and the magnitude of the applied voltage. The theory accounts for the measurements adequately.

Hole mobility characterization of DNA biopolymer by time-of-flight technique

2012 ◽  
Vol 101 (15) ◽  
pp. 153701 ◽  
Author(s):  
Ting-Yu Lin ◽  
I-Ching Chen ◽  
Yu-Chueh Hung
Keyword(s):  
Time Of Flight ◽  
Hole Mobility

Charge motion and trapping in molecularly doped hole transporters

2002 ◽  
Vol 725 ◽  
Author(s):  
H.H. Fong ◽  
K.C. Lun ◽  
S.K. So
Keyword(s):  
Electric Field ◽  
Time Of Flight ◽  
Hole Mobility ◽  
Computational Results ◽  
Charge Motion ◽  
Hole Conduction

AbstractThe charge transporting properties of N, N'-dipheny l-N, N'-bis(3-methylphenyl)-(1,1'-biphenyl)-4,4'-diamine (TPD), TPD doped with 5,6,11,12- tetraphenylnaphthacene (rubrene), and TPD doped with 4-(dicyanomethylene)-2-methyl-6-(pdimethylaminostyryle) 4H-pyran (DCM1) were examined by time-of-flight (TOF) technique between 180-300K. The dependence of the mobility on electric field and temperature for undoped and doped TPD was investigated. Reductions in hole mobility shows that both dopants act as hole traps in TPD. Computational results of TPD also account for the effective hole conduction in pristine TPD film.

Time-of-Flight Technique Limits of Applicability for Thin-Films of Π-Conjugated Polymers

2012 ◽  
Vol 1402 ◽  
Author(s):  
Marco R. Cavallari ◽  
Vinicius R. Zanchin ◽  
Cleber A. Amorim ◽  
Gerson dos Santos ◽  
Fernando J. Fonseca ◽  
...  
Keyword(s):  
Thin Films ◽  
Conjugated Polymers ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Time Of Flight ◽  
Hole Mobility ◽  
Current Mode ◽  
Phenylene Vinylene ◽  
Polymeric Semiconductor ◽  
Order Of Magnitude

ABSTRACTTime of flight (ToF) is the most straightforward technique to determine polymeric semiconductor mobility for electronic applications. We demonstrate ToF limits of applicability to amorphous PPV derivatives, such as poly[2-methoxy-5-(3’,7’-dimethylloctyloxy)-1-4-phenylene vinylene] (MDMO-PPV) and poly[2-methoxy-5-(2’-ethylhexyloxy)-1-4-phenylene vinylene] (MEH-PPV), and polycrystalline poly(3-hexylthiophene) (P3HT). Hole and electron mobility (μ) in submicrometric films (200 – 500 nm) is overestimated compared to casted layers, due to reduced absorption capability, which is confirmed by Charge Extraction by Linearly Increasing Voltage (CELIV) measurements. Charge transport properties in nanometric films, such as for Field-Effect Transistors (FET), can not be studied by current-mode ToF. Hole mobility of ca. 10-5 cm2/Vs with Poole-Frenkel behavior for PPV derivatives and 10-3 cm2/Vs for P3HT is at least one order of magnitude higher than ToF results.

The Influence of Deposition Conditions on the Electronic Properties of a-Si:H Prepared in Expanding Thermal Plasma

2006 ◽  
Vol 910 ◽  
Author(s):  
Monica Brinza ◽  
Guy J. Adriaenssens
Keyword(s):  
Electronic Properties ◽  
Thermal Plasma ◽  
Deposition Temperature ◽  
Hole Mobility ◽  
Deposition Rates ◽  
Transient Photocurrent ◽  
High Deposition Temperature ◽  
Temperature Electron ◽  
Lower Temperature ◽  
Deposition Conditions

AbstractA number of a-Si:H samples prepared in an expanding thermal plasma under varying conditions were examined by means of time-of-flight transient photocurrent measurements. A high deposition temperature allows high deposition rates while achieving high hole mobility and mobility-lifetime product. Lower hole mobility but higher μτ product result from slower deposition at lower temperature. Electron μτ products are uncharacteristically low for all samples due to pronounced deep trapping. RF biasing of the substrate does not improve the results.

Analysis of time-of-flight transient photocurrent in organic semiconductors with coplanar-blocking-electrodes configuration

2008 ◽  
Vol 516 (9) ◽  
pp. 2595-2599 ◽  
Author(s):  
Takao Yoshikawa ◽  
Takashi Nagase ◽  
Takashi Kobayashi ◽  
Shuichi Murakami ◽  
Hiroyoshi Naito
Keyword(s):  
Organic Semiconductors ◽  
Time Of Flight ◽  
Transient Photocurrent

Hole injection and transport in a fluorene-containing copolymer

2002 ◽  
Vol 734 ◽  
Author(s):  
Rizwan U. A. Khan ◽  
Theo Kreouzis ◽  
Dmytro Poplavskyy ◽  
Donal D. C. Bradley
Keyword(s):  
State Of The Art ◽  
Time Of Flight ◽  
Hole Mobility ◽  
Hole Transport ◽  
Hole Injection ◽  
Space Charge Limited Current ◽  
Polymer Leds ◽  
Current Voltage ◽  
Transport Site ◽  
Polystyrene Sulphonate

ABSTRACTWe have studied the electrical properties of a fluorene-containing copolymer which is currently being developed for state-of-the-art blue polymer LEDs. This copolymer is made up of three functional groups which are nominally the hole-conducting, electron conducting and emissive regions. Using a combination of current/voltage, time-of-flight and dark injection transient versus temperature measurements, the injection and transport properties of the material have been investigated. Hole injection from polystyrene sulphonate doped polyethylenedioxythiophene (PEDOT:PSS) into the polymer is found to be consistent with an ohmic contact. Hole transport within the fluorene copolymer is found to possess a mobility that is two orders of magnitude lower than that for previously studied polymers containing the copolymer constituents. Using the equations for trap-free space-charge limited current, predicted J/V characteristics have been obtained from the mobility values derived using the time-of-flight technique. We discuss both the reduced hole mobility of the copolymer, and the discrepancies between the measured and predicted J/V characteristics, in terms of variations in both the trap and transport site densities and their energetic and spatial distributions.

Time-of-Flight Measurement of Hole Mobility in Aluminum (III) Complexes

1999 ◽  
Vol 38 (Part 2, No. 11A) ◽  
pp. L1252-L1254 ◽  
Author(s):  
Shigeki Naka ◽  
Hiroyuki Okada ◽  
Hiroyoshi Onnagawa ◽  
Junji Kido ◽  
Tetsuo Tsutsui
Keyword(s):  
Time Of Flight ◽  
Hole Mobility ◽  
Flight Measurement

scholarly journals Improved syntheses of high hole mobility phthalocyanines: A case of steric assistance in the cyclo-oligomerisation of phthalonitriles

2012 ◽  
Vol 8 ◽  
pp. 120-128 ◽  
Author(s):  
Daniel J Tate ◽  
Rémi Anémian ◽  
Richard J Bushby ◽  
Suwat Nanan ◽  
Stuart L Warriner ◽  
...  
Keyword(s):  
Hexagonal Phase ◽  
Time Of Flight ◽  
Hole Mobility ◽  
High Time ◽  
High Yield ◽  
Metal Free ◽  
Temperature Range

It has been shown that the base-initiated cyclo-oligomerisation of phthalonitriles is favoured by bulky α-substituents making it possible to obtain the metal-free phthalocyanine directly and in high yield. The phthalocyanine with eight α-isoheptyl substituents gives a high time-of-flight hole mobility of 0.14 cm2·V−1·s−1 within the temperature range of the columnar hexagonal phase, that is 169–189 °C.

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