Localized-state distributions in molecularly doped polymers determined from time-of-flight transient photocurrent

2000 ◽  
Vol 88 (1) ◽  
pp. 252-259 ◽  
Author(s):  
Takashi Nagase ◽  
Hiroyoshi Naito
2017 ◽  
Vol 59 (4) ◽  
pp. 575-578 ◽  
Author(s):  
A. P. Tyutnev ◽  
V. S. Saenko ◽  
A. A. Aleshkevich ◽  
M. A. Afanasyeva

1992 ◽  
Vol 258 ◽  
Author(s):  
Homer Antoniadis ◽  
E. A. Schiff

ABSTRACTWe have measured the transient photocurrent in “time-of-flight” structures of a-Si:H using bias voltages applied following photocarrier generation by a laser flash. The delayed field technique appears promising both as a probe of the deep level distribution and also of photocarrier thermalization. We describe a simplified theory for the delayed field transients including the effects of the delay time and the magnitude of the applied voltage. The theory accounts for the measurements adequately.


2013 ◽  
Vol 55 (2) ◽  
pp. 137-144 ◽  
Author(s):  
R. Sh. Ikhsanov ◽  
A. P. Tyutnev ◽  
V. S. Saenko ◽  
E. D. Pozhidaev

2008 ◽  
Vol 516 (9) ◽  
pp. 2595-2599 ◽  
Author(s):  
Takao Yoshikawa ◽  
Takashi Nagase ◽  
Takashi Kobayashi ◽  
Shuichi Murakami ◽  
Hiroyoshi Naito

2003 ◽  
Vol 203-204 ◽  
pp. 575-579 ◽  
Author(s):  
Th. Gross ◽  
I. Retzko ◽  
J. Friedrich ◽  
W. Unger

2011 ◽  
Vol 23 (32) ◽  
pp. 325105 ◽  
Author(s):  
Andrey P Tyutnev ◽  
Renat Sh Ikhsanov ◽  
Vladimir S Saenko ◽  
Evgenii D Pozhidaev

2018 ◽  
Vol 503 ◽  
pp. 65-70 ◽  
Author(s):  
A.P. Tyutnev ◽  
R. Sh. Ikhsanov ◽  
V.S. Saenko ◽  
D.V. Nikerov

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