Accurate determination of delay time and length of flight path for a time‐of‐flight modulated molecular beam apparatus

1993 ◽  
Vol 11 (5) ◽  
pp. 2603-2609 ◽  
Author(s):  
P. K. Wu ◽  
J. B. Hudson
Keyword(s):  
Delay Time ◽  
Molecular Beam ◽  
Accurate Determination ◽  
Time Of Flight ◽  
Flight Path

Accurate determination of optical bandgap and lattice parameters of Zn1–xMgxO epitaxial films (0≤x≤0.3) grown by plasma-assisted molecular beam epitaxy on a-plane sapphire

2013 ◽  
Vol 113 (23) ◽  
pp. 233512 ◽  
Author(s):  
Bernhard Laumer ◽  
Fabian Schuster ◽  
Martin Stutzmann ◽  
Andreas Bergmaier ◽  
Günther Dollinger ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Accurate Determination ◽  
Epitaxial Films ◽  
Optical Bandgap ◽  
Lattice Parameters

Change of Arsenic Coverage on GaAs(001)

1993 ◽  
Vol 312 ◽  
Author(s):  
Holger Nörenberg ◽  
Nobuyuki Koguchi
Keyword(s):  
Electron Microscopy ◽  
Molecular Beam ◽  
Accurate Determination ◽  
High Energy ◽  
Surface Structures ◽  
Rheed Pattern ◽  
High Energy Electron ◽  
Reconstructed Surface ◽  
Scanning Electron

Abstract(2×4) and c(4×4) reconstructed GaAs(001) surfaces prepared by Molecular Beam Epitaxy (MBE) were studied by Reflection High Energy Electron Diffraction (RHEED). A method for accurate determination of the Arsenic coverage of reconstructed GaAs(001) surfaces is introduced. The time of Gallium supply to the reconstructed surface until a halo appears in the RHEED pattern is taken as measure for the Arsenic coverage. Structures between them were investigated at a substrate temperature of 200°C. The RHEED results were verified by High Resolution Scanning Electron Microscopy (HRSEM). Dependent on the surface reconstruction, Arsenic coverages between 0.76 and 1.22 monolayer (ML) were observed. Surface structures, observed during transformation between β(2×4) and c(4×4) will be discussed.

Sign in / Sign up

Export Citation Format

Share Document