High Contrast Optically Bistable Optoelectronic Switches Using Strained InGaAs/AlGaAs Material System

1991 ◽  
Vol 240 ◽  
Author(s):  
R. M. Kapre ◽  
Li Chen ◽  
K. Kaviani ◽  
Kezhong Hu ◽  
Ping Chen ◽  
...  
Keyword(s):  
Field Effect ◽  
Resonant Tunneling ◽  
Field Effect Transistor ◽  
Resonant Tunneling Diode ◽  
Material System ◽  
High Contrast ◽  
Tunneling Diode ◽  
Bistable Switching ◽  
Fabry Perot ◽  
Effect Transistor

We report the the first demonstration of optically bistable switching in monolithic opto-electronic transistor configuration using all III-V components. A strained InGaAs/GaAs asymmetric Fabry-Perot (ASFP) modulator / detector, a strained resonant tunneling diode (RTD), and a GaAs based field-effect-transistor (FET) were used in this demonstration.

Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits

1996 ◽  
Vol 39 (10) ◽  
pp. 1449-1455 ◽  
Author(s):  
J.C. Yen ◽  
Q. Zhang ◽  
M.J. Mondry ◽  
P.M. Chavarkar ◽  
E.L. Hu ◽  
...  
Keyword(s):  
Field Effect ◽  
Resonant Tunneling ◽  
Field Effect Transistor ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Transistor Circuits ◽  
Effect Transistor

Observation of electron resonant tunneling in a lateral dual‐gate resonant tunneling field‐effect transistor

1989 ◽  
Vol 55 (2) ◽  
pp. 176-178 ◽  
Author(s):  
S. Y. Chou ◽  
D. R. Allee ◽  
R. F. W. Pease ◽  
J. S. Harris
Keyword(s):  
Field Effect ◽  
Resonant Tunneling ◽  
Field Effect Transistor ◽  
Dual Gate ◽  
Effect Transistor

Integration of a resonant‐tunneling structure with a metal‐semiconductor field‐effect transistor

1987 ◽  
Vol 51 (19) ◽  
pp. 1542-1544 ◽  
Author(s):  
T. K. Woodward ◽  
T. C. McGill ◽  
H. F. Chung ◽  
R. D. Burnham
Keyword(s):  
Field Effect ◽  
Resonant Tunneling ◽  
Field Effect Transistor ◽  
Effect Transistor ◽  
Resonant Tunneling Structure

scholarly journals Development of Quantum Simulator for Emerging Nanoelectronics Devices

2012 ◽  
Vol 2012 ◽  
pp. 1-10
Author(s):  
Dinh Sy Hien
Keyword(s):  
Green’S Function ◽  
Green's Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphic User Interface ◽  
Quantum Devices ◽  
Tunneling Diode ◽  
Quantum Device ◽  
Current Voltage ◽  
Effect Transistor

We have developed NEMO-VN2, a new quantum device modeling tool that simulates a wide variety of quantum devices including the resonant tunneling diode, the single electron transistor, the molecular field effect transistor, the carbon nanotube field effect transistor, and the spin field effect transistor. In this work the nonequilibrium Green’s function is used to perform a comprehensive study of the emerging nanoelectronics devices. The program has been written by using graphic user interface of Matlab. NEMO-VN2 uses Matlab to solve Schrodinger equation to get current-voltage characteristics of quantum devices. In the paper, we present a short overview of the theoretical methodology using non-equilibrium Green’s function for modeling of various quantum devices and typical simulations used to illustrate the capabilities of the NEMO-VN2.

Lateral resonant tunneling in a double‐barrier field‐effect transistor

1989 ◽  
Vol 55 (6) ◽  
pp. 589-591 ◽  
Author(s):  
K. Ismail ◽  
D. A. Antoniadis ◽  
Henry I. Smith
Keyword(s):  
Field Effect ◽  
Resonant Tunneling ◽  
Field Effect Transistor ◽  
Double Barrier ◽  
Effect Transistor
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