Integration of a resonant‐tunneling structure with a metal‐semiconductor field‐effect transistor

T. K. Woodward; T. C. McGill; H. F. Chung; R. D. Burnham

doi:10.1063/1.98629

Integration of a resonant‐tunneling structure with a metal‐semiconductor field‐effect transistor

Applied Physics Letters ◽

10.1063/1.98629 ◽

1987 ◽

Vol 51 (19) ◽

pp. 1542-1544 ◽

Cited By ~ 37

Author(s):

T. K. Woodward ◽

T. C. McGill ◽

H. F. Chung ◽

R. D. Burnham

Keyword(s):

Field Effect ◽

Resonant Tunneling ◽

Field Effect Transistor ◽

Effect Transistor ◽

Resonant Tunneling Structure

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Observation of electron resonant tunneling in a lateral dual‐gate resonant tunneling field‐effect transistor

Applied Physics Letters ◽

10.1063/1.102113 ◽

1989 ◽

Vol 55 (2) ◽

pp. 176-178 ◽

Cited By ~ 37

Author(s):

S. Y. Chou ◽

D. R. Allee ◽

R. F. W. Pease ◽

J. S. Harris

Keyword(s):

Field Effect ◽

Resonant Tunneling ◽

Field Effect Transistor ◽

Dual Gate ◽

Effect Transistor

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A Resonant Tunneling Nanowire Field Effect Transistor with Physical Contractions: A Negative Differential Resistance Device for Low Power Very Large Scale Integration Applications

Journal of Electronic Materials ◽

10.1007/s11664-017-5823-z ◽

2017 ◽

Vol 47 (2) ◽

pp. 1091-1098 ◽

Cited By ~ 41

Author(s):

Rouzbeh Molaei Imen Abadi ◽

Mehdi Saremi

Keyword(s):

Low Power ◽

Negative Differential Resistance ◽

Field Effect ◽

Resonant Tunneling ◽

Large Scale ◽

Field Effect Transistor ◽

Differential Resistance ◽

Large Scale Integration ◽

Effect Transistor ◽

Scale Integration

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Lateral resonant tunneling in a double‐barrier field‐effect transistor

Applied Physics Letters ◽

10.1063/1.102267 ◽

1989 ◽

Vol 55 (6) ◽

pp. 589-591 ◽

Cited By ~ 48

Author(s):

K. Ismail ◽

D. A. Antoniadis ◽

Henry I. Smith

Keyword(s):

Field Effect ◽

Resonant Tunneling ◽

Field Effect Transistor ◽

Double Barrier ◽

Effect Transistor

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Lateral Resonant-Tunneling Field-Effect Transistor

Complete Guide to Semiconductor Devices ◽

10.1002/9781118014769.ch31 ◽

2010 ◽

pp. 252-255

Keyword(s):

Field Effect ◽

Resonant Tunneling ◽

Field Effect Transistor ◽

Effect Transistor

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High-Speed and Low-Power Source-Coupled Field-Effect Transistor-Logic-Type Non-Return-to-Zero Delayed Flip-Flop Circuit Using Resonant Tunneling Diode/High Electron Mobility Transistor Integration Technology

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2877 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2877-2879 ◽

Cited By ~ 2

Author(s):

Hyungtae Kim ◽

Seongjin Yeon ◽

Kwangseok Seo

Keyword(s):

Field Effect ◽

Resonant Tunneling ◽

High Speed ◽

Field Effect Transistor ◽

High Electron Mobility Transistor ◽

Power Source ◽

High Electron ◽

Flip Flop ◽

Tunneling Diode ◽

Effect Transistor

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Fabrication and Characterization of CdF2/CaF2 Resonant Tunneling Floating Gate Metal-oxide-semiconductor Field Effect Transistor Structures

10.7567/ssdm.2008.h-9-3 ◽

2008 ◽

Author(s):

M. Watanabe ◽

T. Wada

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Resonant Tunneling ◽

Field Effect Transistor ◽

Metal Oxide Semiconductor ◽

Floating Gate ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Fabrication And Characterization

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Band-to-Band Graphene Resonant Tunneling Field Effect Transistor

10.7567/ssdm.2015.b-5-2 ◽

2015 ◽

Author(s):

S. Suzuki ◽

M. Muruganathan ◽

S. Oda ◽

H. Mizuta

Keyword(s):

Field Effect ◽

Resonant Tunneling ◽

Field Effect Transistor ◽

Effect Transistor

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A planar resonant-tunneling field-effect transistor

IEEE Transactions on Electron Devices ◽

10.1109/16.43732 ◽

1989 ◽

Vol 36 (11) ◽

pp. 2617

Author(s):

K. Ismail ◽

D.A. Antoniadis ◽

H.I. Smith

Keyword(s):

Field Effect ◽

Resonant Tunneling ◽

Field Effect Transistor ◽

Effect Transistor

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Monolithic integrated resonant tunneling diode and heterostructure junction field effect transistor circuits

Solid-State Electronics ◽

10.1016/0038-1101(96)00065-2 ◽

1996 ◽

Vol 39 (10) ◽

pp. 1449-1455 ◽

Cited By ~ 9

Author(s):

J.C. Yen ◽

Q. Zhang ◽

M.J. Mondry ◽

P.M. Chavarkar ◽

E.L. Hu ◽

...

Keyword(s):

Field Effect ◽

Resonant Tunneling ◽

Field Effect Transistor ◽

Resonant Tunneling Diode ◽

Tunneling Diode ◽

Transistor Circuits ◽

Effect Transistor

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High Contrast Optically Bistable Optoelectronic Switches Using Strained InGaAs/AlGaAs Material System

MRS Proceedings ◽

10.1557/proc-240-875 ◽

1991 ◽

Vol 240 ◽

Author(s):

R. M. Kapre ◽

Li Chen ◽

K. Kaviani ◽

Kezhong Hu ◽

Ping Chen ◽

...

Keyword(s):

Field Effect ◽

Resonant Tunneling ◽

Field Effect Transistor ◽

Resonant Tunneling Diode ◽

Material System ◽

High Contrast ◽

Tunneling Diode ◽

Bistable Switching ◽

Fabry Perot ◽

Effect Transistor

We report the the first demonstration of optically bistable switching in monolithic opto-electronic transistor configuration using all III-V components. A strained InGaAs/GaAs asymmetric Fabry-Perot (ASFP) modulator / detector, a strained resonant tunneling diode (RTD), and a GaAs based field-effect-transistor (FET) were used in this demonstration.

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