1995 53rd Annual Device Research Conference Digest
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Published By IEEE

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Layer composition and mode structure analysis of heterojunction laser diodes by near field scanning optical microscopy

1995 53rd Annual Device Research Conference Digest ◽

10.1109/drc.1995.496306 ◽

2002 ◽

Author(s):

M.S. Unlu ◽

B.B. Goldberg ◽

W.D. Herzog ◽

H.F. Ghaemi ◽

E. Towe

Keyword(s):

Optical Microscopy ◽

Structure Analysis ◽

Near Field ◽

Laser Diodes ◽

Mode Structure ◽

Scanning Optical Microscopy ◽

Near Field Scanning ◽

Layer Composition

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Investigation of GaAs/AlGaAs multiquantum well infrared detector

1995 53rd Annual Device Research Conference Digest ◽

10.1109/drc.1995.496297 ◽

2002 ◽

Author(s):

Jin-Min Li ◽

Hai-Qun Zheng ◽

Yi-Ping Zeng ◽

Mei-Ying Kong

Keyword(s):

Infrared Detector ◽

Multiquantum Well

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500°C operation of a GaN/SiC heterojunction bipolar transistor

1995 53rd Annual Device Research Conference Digest ◽

10.1109/drc.1995.496291 ◽

2002 ◽

Cited By ~ 3

Author(s):

S.S. Chang ◽

J. Pankove ◽

M. Leksono ◽

B. van Zeghbroeck

Keyword(s):

Bipolar Transistor ◽

Heterojunction Bipolar Transistor

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Low frequency noise consideration for MOSFET analog circuits

1995 53rd Annual Device Research Conference Digest ◽

10.1109/drc.1995.496230 ◽

2002 ◽

Author(s):

Chun Hu ◽

G.P. Li

Keyword(s):

Analog Circuits ◽

Low Frequency ◽

Frequency Noise ◽

Low Frequency Noise

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Broadly-tunable, narrow-linewidth resonant cavity light emitter

1995 53rd Annual Device Research Conference Digest ◽

10.1109/drc.1995.496299 ◽

2002 ◽

Author(s):

M.C. Larson ◽

J.S. Harris

Keyword(s):

Resonant Cavity ◽

Narrow Linewidth ◽

Light Emitter

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Improvement of IGBT latching performance by indium doping

1995 53rd Annual Device Research Conference Digest ◽

10.1109/drc.1995.496293 ◽

2002 ◽

Cited By ~ 2

Author(s):

Z. Shen ◽

V. Parthasarathy ◽

T.P. Chow

Keyword(s):

Indium Doping

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Scaling of two dimensional MESFETs for ultra low power applications

1995 53rd Annual Device Research Conference Digest ◽

10.1109/drc.1995.496236 ◽

2002 ◽

Cited By ~ 2

Author(s):

W.C.B. Peatman ◽

M. Hurt ◽

H. Park ◽

R. Tsai ◽

M. Shur

Keyword(s):

Low Power ◽

Two Dimensional ◽

Ultra Low Power

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A low power 77 K nano-memory with single electron nano-crystal storage

1995 53rd Annual Device Research Conference Digest ◽

10.1109/drc.1995.496266 ◽

2002 ◽

Cited By ~ 2

Author(s):

S. Tiwari ◽

F. Rana ◽

Wei Chen ◽

K. Chan ◽

H. Hanafi

Keyword(s):

Low Power ◽

Single Electron ◽

Nano Crystal

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Effect of device impedance on the measurement of carrier lifetime and carrier density in semiconductor lasers

1995 53rd Annual Device Research Conference Digest ◽

10.1109/drc.1995.496305 ◽

2002 ◽

Author(s):

E.J. Flynn

Keyword(s):

Semiconductor Lasers ◽

Carrier Density ◽

Carrier Lifetime

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Resonant tunneling in InP/InGaAs lateral double barrier heterostructures

1995 53rd Annual Device Research Conference Digest ◽

10.1109/drc.1995.496269 ◽

2002 ◽

Author(s):

T.P.E. Broekaert ◽

J.N. Randall ◽

E.A. Beam ◽

D. Jovanovic ◽

B.D. Smith

Keyword(s):

Resonant Tunneling ◽

Double Barrier

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1995 53rd Annual Device Research Conference DigestLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

Layer composition and mode structure analysis of heterojunction laser diodes by near field scanning optical microscopy

Investigation of GaAs/AlGaAs multiquantum well infrared detector

500°C operation of a GaN/SiC heterojunction bipolar transistor

Low frequency noise consideration for MOSFET analog circuits

Broadly-tunable, narrow-linewidth resonant cavity light emitter

Improvement of IGBT latching performance by indium doping

Scaling of two dimensional MESFETs for ultra low power applications

A low power 77 K nano-memory with single electron nano-crystal storage

Effect of device impedance on the measurement of carrier lifetime and carrier density in semiconductor lasers

Resonant tunneling in InP/InGaAs lateral double barrier heterostructures

1995 53rd Annual Device Research Conference Digest
Latest Publications