High‐contrast optically bistable optoelectronic switch based on InGaAs/GaAs (100) asymmetric Fabry–Perot modulator, detector, and resonant tunneling diode

1991 ◽  
Vol 59 (13) ◽  
pp. 1523-1525 ◽  
Author(s):  
Li Chen ◽  
R. M. Kapre ◽  
Kezhong Hu ◽  
A. Madhukar
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
High Contrast ◽  
Tunneling Diode ◽  
Fabry Perot ◽  
Optoelectronic Switch

High Contrast Optically Bistable Optoelectronic Switches Using Strained InGaAs/AlGaAs Material System

1991 ◽  
Vol 240 ◽  
Author(s):  
R. M. Kapre ◽  
Li Chen ◽  
K. Kaviani ◽  
Kezhong Hu ◽  
Ping Chen ◽  
...  
Keyword(s):  
Field Effect ◽  
Resonant Tunneling ◽  
Field Effect Transistor ◽  
Resonant Tunneling Diode ◽  
Material System ◽  
High Contrast ◽  
Tunneling Diode ◽  
Bistable Switching ◽  
Fabry Perot ◽  
Effect Transistor

We report the the first demonstration of optically bistable switching in monolithic opto-electronic transistor configuration using all III-V components. A strained InGaAs/GaAs asymmetric Fabry-Perot (ASFP) modulator / detector, a strained resonant tunneling diode (RTD), and a GaAs based field-effect-transistor (FET) were used in this demonstration.

Analysis of Spin-Polarized Current Using InSb/AlInSb Resonant Tunneling Diode

2012 ◽  
Vol E95.C (5) ◽  
pp. 871-878
Author(s):  
Masanari FUJITA ◽  
Mitsufumi SAITO ◽  
Michihiko SUHARA
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Spin Polarized

GaAs/AlAs resonant-tunneling diode for subharmonic mixers

2010 ◽  
Vol 39 (5) ◽  
pp. 331-339 ◽  
Author(s):  
N. V. Alkeev ◽  
S. V. Averin ◽  
A. A. Dorofeev ◽  
N. B. Gladysheva ◽  
M. Yu. Torgashin
Keyword(s):  
Resonant Tunneling ◽  
Resonant Tunneling Diode ◽  
Tunneling Diode ◽  
Subharmonic Mixers
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