scholarly journals Development of Quantum Simulator for Emerging Nanoelectronics Devices

2012 ◽  
Vol 2012 ◽  
pp. 1-10
Author(s):  
Dinh Sy Hien
Keyword(s):  
Green’S Function ◽  
Green's Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphic User Interface ◽  
Quantum Devices ◽  
Tunneling Diode ◽  
Quantum Device ◽  
Current Voltage ◽  
Effect Transistor

We have developed NEMO-VN2, a new quantum device modeling tool that simulates a wide variety of quantum devices including the resonant tunneling diode, the single electron transistor, the molecular field effect transistor, the carbon nanotube field effect transistor, and the spin field effect transistor. In this work the nonequilibrium Green’s function is used to perform a comprehensive study of the emerging nanoelectronics devices. The program has been written by using graphic user interface of Matlab. NEMO-VN2 uses Matlab to solve Schrodinger equation to get current-voltage characteristics of quantum devices. In the paper, we present a short overview of the theoretical methodology using non-equilibrium Green’s function for modeling of various quantum devices and typical simulations used to illustrate the capabilities of the NEMO-VN2.

scholarly journals SIMULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF SPIN FIELD EFFECT TRANSISTOR USING NEMO-VN2

2012 ◽  
Vol 15 (3) ◽  
pp. 5-16
Author(s):  
Hien Sy Dinh
Keyword(s):  
Field Effect ◽  
Field Effect Transistor ◽  
Drain Current ◽  
Graphic User Interface ◽  
Green Function Method ◽  
Spin Field ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Spin Fet

We have developed a simulator for nanoelectronics devices, NEMO-VN2. In this work, we provide an overview of spin field effect transistor. We use the simulator to explore the performance of spin FET. The model of the spin FET is based on non-equilibrium Green function method and implemented by using graphic user interface of Matlab. The current-voltage characteristics such as drain current-voltage, drain current-gate voltage ones are explored.

scholarly journals Simulation of current-voltage characteristics of graphene field effect transistor (GFET)

2013 ◽  
Vol 16 (3) ◽  
pp. 5-12
Author(s):  
Hien Sy Dinh
Keyword(s):  
Field Effect ◽  
Function Method ◽  
Field Effect Transistor ◽  
Graphic User Interface ◽  
Graphene Field Effect Transistor ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Effect Transistor ◽  
Graphene Fet ◽  
Non Equilibrium Green’S Function

Graphene has been one of the most vigorously studied research materials. We have developed a program for simulation of graphene field effect transistor (GFET). In this work, we use the simulation program to explore the performance of graphene FET. The simple model of the graphene FET is based on non-equilibrium Green’s function method and first is implemented by using graphic user interface of Matlab. The current-voltage characteristics of the GFET and affects of channel materials, gate materials, size of graphene FET, temperature on the characteristics are explored.

The Parametric Study of Armchair Graphene Nanoribbon Field Effect Transistor by Non-Equilibrium Green’s Function Method

2020 ◽  
Vol 20 (8) ◽  
pp. 4832-4838
Author(s):  
Ji-Hyun Hur
Keyword(s):  
Green’S Function ◽  
Green's Function ◽  
Field Effect ◽  
Field Effect Transistor ◽  
Graphene Nanoribbon ◽  
Effect Transistor ◽  
Silicon Cmos ◽  
Armchair Graphene Nanoribbon ◽  
Non Equilibrium Green’S Function ◽  
Non Equilibrium

We have carried out a comprehensive parametric analysis on the potential performance of a graphene nanoribbon field effect transistor (GNRFET). We modeled the behavior of GNRFETs with nanometer width GNR channels to formulate a self-consistent, non-equilibrium Green’s function (NEGF) scheme in conjunction with the Poisson equation and allow the GNRFET to operate as a switch. Based on the results, we propose a metric to compete with current silicon CMOS highperformance (HP) or low-power (LP) devices, explaining that this can vary widely depending on the GNRFET structure parameters.

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