Raman Spectroscopy Study of Damage in n+ - GaAs Introduced by H2 and CH4/H2 RIE

1991 ◽  
Vol 240 ◽  
Author(s):  
I. De Wolf ◽  
M. Van Hove ◽  
R.-G. Pereira ◽  
M. Van Rossum ◽  
H. E. Maes ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Structural Damage ◽  
Reactive Ion Etching ◽  
Surface Region ◽  
Effect Of Temperature ◽  
Spectroscopy Study ◽  
Surface Layers ◽  
Ion Etching ◽  
Crystal Damage ◽  
Plasma Annealing

ABSTRACTRaman spectroscopy is used to study crystal damage and electrical damage in n+-GaAs produced by reactive ion etching (REE). H2 RIE is compared with CH4/H2 RIE and the effect of temperature annealing is studied. The results are compared with C-V analysis. It is found that structural damage introduced by RIE in the surface layers of the sample is larger for the H2 plasma than for the CH4/H2 plasma. Annealing results in a decrease of this structural damage. H2 RIE as well as CH4/H2 RIE cause an increase of the inactive surface region. This increase is found to be larger for the H2 RDE. C-V experiments show that annealing results in a reactivation and associated decrease of the width of the inactive region.

Dry Etching Damage in GaAs and Al0.22Ga0.78As

1986 ◽  
Vol 76 ◽  
Author(s):  
D. Kirillov ◽  
C. B. Cooper ◽  
R. A. Powell
Keyword(s):  
Raman Spectroscopy ◽  
Crystal Lattice ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Type Material ◽  
Plasma Cleaning ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Phonon Spectra ◽  
Ar Plasma

ABSTRACTReactive ion etching induced damage in GaAs and Al0.22Ga0.78As was studied using Raman spectroscopy. The phonon spectra of undoped materials allow evaluation of damage to the crystal lattice and the coupled plasmonphonon spectra of n-type material provide a sensitive probe of electrical characteristics. Studies were made of layers exposed to plasmas of Ar, SF6 and SiCl4. Conditions for low damage Ar plasma cleaning and for dielectric cap removal by SF6 were established. Etching in the SiCl4 plasma generally produced strong damage, although low damage etching was observed in a few cases.

Characterization of Sidewall Residue Film and Atomic Structure of the Trench Formed by BCI3/CI2 Reactive Ion Etching

1989 ◽  
Vol 158 ◽  
Author(s):  
Sun Jin Yun ◽  
Young-Jin Jeon ◽  
Jeong Y. Lee
Keyword(s):  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Reactive Ion Etching ◽  
Surface Region ◽  
Bottom Surface ◽  
Silicon Substrates ◽  
Ion Etching ◽  
Transmission Electron ◽  
Physical Sputtering ◽  
20 Nm

ABSTRACTThe silicon trench etching in BCl3/Cl2 reactive ion etching plasma leads to the intrinsic bonding damage, the permeations of etching species and impurities into silicon substrates, and the deposition of residue film on trench sidewall. The contaminations and the damages in trench were investigated by using high resolution transmission electron microscopy (HRTEM), secondary ion mass spectrometry (SIMS), and x-ray photoelectron spectroscopy (XPS). The microstructure of the rounded bottom surface showed that the surface region was distorted by 2 - 6 atomic layers and the trench etch was mainly limited by the physical sputtering-like mechanism. The damage in the silicon lattice consisted of prominent planar defects roughly confined to {110} and {111} planes. The thickness of sidewall residue film was 10 - 90 nm, which was thinner at deeper region of the trench, whereas that of residue film at the trench bottom was 1.5 - 3.5 nm. The SIMS results of no-patterned specimen presented that the permeation depths of boron and chlorine into the Si-substrate were about 40 and 20 nm, respectively. The presence of BxCly and Cl-related Si chemical states was identified from XPS analysis of the residue film.

Low Damage Magnetron Reactive Ion Etching of GaAs

1991 ◽  
Vol 240 ◽  
Author(s):  
G. Mclane ◽  
M. Meyyappan ◽  
M. W. Cole ◽  
H. S. Lee ◽  
R. Lareau ◽  
...  
Keyword(s):  
Minimal Surface ◽  
Reactive Ion Etching ◽  
Surface Region ◽  
Surface Damage ◽  
Silicon Tetrachloride ◽  
Attractive Alternative ◽  
Ion Etching

ABSTRACTMagnetron reactive ion etching is an attractive alternative to reactive ion etching since it has the potential for producing minimal surface damage while still retaining the advantages of reactive ion etching. We report here the results of a study of GaAs magnetron ion etching using Freon-12 and silicon tetrachloride etch gases. Differences are found in etch profiles and surface region characteristics of GaAs samples etched by the two gases. The relevant mechanisms are discussed.

Reactive Ion Etching Damage to Shallow Junctions

1986 ◽  
Vol 68 ◽  
Author(s):  
I. W. Wu ◽  
R. H. Bruce ◽  
J. C. Mikkelsen ◽  
R. A. Street ◽  
T. Y. Huang ◽  
...  
Keyword(s):  
Structural Damage ◽  
Reactive Ion Etching ◽  
Etch Depth ◽  
Chemical Contamination ◽  
Ion Etching ◽  
Annealing Behavior ◽  
Shallow Junctions ◽  
Etched Surface ◽  
20 Nm ◽  
Induced Defects

AbstractThe damage of reactive ion etching to shallow junctions is an important consideration in advanced technology.In this paper, the damage incurred during contact etch is studied, with emphasis on those defects responsible for junction leakage of shallow junctions.Shallow p+/n and n+/p junctions have been prepared with depths of 160 nm.Junction leakage measurements have been made for various amounts of silicon loss up to within 20 nm of the junctions by using a CHF3 + CO2 plasma.The degree of chemical and structural damage has been characterized by using photoluminescence, SIMS, and spreading carrier profiling.The leakage current density was found to depend strongly on contact area and increase rapidly with junction etch depth after the etched surface has extended to within 80 nm of the junction boundary.The concentration and depth of damage increases with increasing plasma exposure until saturation.Etching induced defects are observed in photoluminescence, and one such defect is identified as a carbon interstitialcy.Enhanced diffusion effects were observed for both chemical contamination from the etch gas and the junction dopants.The spatial distribution of the chemical and structural damage has been found to correlate with the junction leakages.The annealing behavior of damage has also been investigated.

Raman spectroscopy of reactive ion etching induced subsurface damage

1985 ◽  
Vol 46 (6) ◽  
pp. 589-591 ◽  
Author(s):  
J. C. Tsang ◽  
G. S. Oehrlein ◽  
Ivan Haller ◽  
J. S. Custer
Keyword(s):  
Raman Spectroscopy ◽  
Reactive Ion Etching ◽  
Subsurface Damage ◽  
Ion Etching
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