Reactive Ion Etching Damage to Shallow Junctions

1986 ◽  
Vol 68 ◽  
Author(s):  
I. W. Wu ◽  
R. H. Bruce ◽  
J. C. Mikkelsen ◽  
R. A. Street ◽  
T. Y. Huang ◽  
...  
Keyword(s):  
Structural Damage ◽  
Reactive Ion Etching ◽  
Etch Depth ◽  
Chemical Contamination ◽  
Ion Etching ◽  
Annealing Behavior ◽  
Shallow Junctions ◽  
Etched Surface ◽  
20 Nm ◽  
Induced Defects

AbstractThe damage of reactive ion etching to shallow junctions is an important consideration in advanced technology.In this paper, the damage incurred during contact etch is studied, with emphasis on those defects responsible for junction leakage of shallow junctions.Shallow p+/n and n+/p junctions have been prepared with depths of 160 nm.Junction leakage measurements have been made for various amounts of silicon loss up to within 20 nm of the junctions by using a CHF3 + CO2 plasma.The degree of chemical and structural damage has been characterized by using photoluminescence, SIMS, and spreading carrier profiling.The leakage current density was found to depend strongly on contact area and increase rapidly with junction etch depth after the etched surface has extended to within 80 nm of the junction boundary.The concentration and depth of damage increases with increasing plasma exposure until saturation.Etching induced defects are observed in photoluminescence, and one such defect is identified as a carbon interstitialcy.Enhanced diffusion effects were observed for both chemical contamination from the etch gas and the junction dopants.The spatial distribution of the chemical and structural damage has been found to correlate with the junction leakages.The annealing behavior of damage has also been investigated.

Optimization of Reactive Ion Etching Parameters Via Material Characterization

1990 ◽  
Vol 201 ◽  
Author(s):  
M. W. Cole ◽  
C. B. Cooper ◽  
M. Dutta ◽  
C. S. Wrenn ◽  
S. Saliman ◽  
...  
Keyword(s):  
Power Level ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Time Period ◽  
Lattice Damage ◽  
High Power Level ◽  
Etching Parameters ◽  
Etched Surface ◽  
Short Time ◽  
Surface Morphologies

AbstractThis study evaluates variations in SiCl4 reactive ion etching (RIE) process parameters in order to optimize the fabrication of lateral quantum well arrays (QWA) used in III–V semiconductor laser and detector designs. Since fabrication involves MBE regrowth on SiCl4 etched surfaces, material quality of both the etched surface and GaAs regrowth are evaluated. The variation of RIE parameters involved power levels, DC bias and etch times (10 Watts, -30V, 8 min.; 25 Watts, -100V, 5 min.; 95 Watts,-340V, 2 min.) while material removal was held constant (400nm). Evaluation of the etched surfaces revealed that the lattice damage depth exceeded lOOnm for all power levels. The extent of disorder beneath the etched surface was less for the low power long etch time. Etching at higher power levels for shorter time periods resulted in smoother surfaces and enhanced electrical characteristics, which in turn yielded a higher quality GaAs regrowth region. For the RIE parameters examined in this study, the variation in defect densities seemed to have a lesser effect on device performance as compared to the extreme differences in surface morphologies. Thus, for the parameters evaluated in this work, we suggest that QWA fabrication is optimized via SiClif RIE at the high power level for a short time period.

Characterization of Sidewall Residue Film and Atomic Structure of the Trench Formed by BCI3/CI2 Reactive Ion Etching

1989 ◽  
Vol 158 ◽  
Author(s):  
Sun Jin Yun ◽  
Young-Jin Jeon ◽  
Jeong Y. Lee
Keyword(s):  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Reactive Ion Etching ◽  
Surface Region ◽  
Bottom Surface ◽  
Silicon Substrates ◽  
Ion Etching ◽  
Transmission Electron ◽  
Physical Sputtering ◽  
20 Nm

ABSTRACTThe silicon trench etching in BCl3/Cl2 reactive ion etching plasma leads to the intrinsic bonding damage, the permeations of etching species and impurities into silicon substrates, and the deposition of residue film on trench sidewall. The contaminations and the damages in trench were investigated by using high resolution transmission electron microscopy (HRTEM), secondary ion mass spectrometry (SIMS), and x-ray photoelectron spectroscopy (XPS). The microstructure of the rounded bottom surface showed that the surface region was distorted by 2 - 6 atomic layers and the trench etch was mainly limited by the physical sputtering-like mechanism. The damage in the silicon lattice consisted of prominent planar defects roughly confined to {110} and {111} planes. The thickness of sidewall residue film was 10 - 90 nm, which was thinner at deeper region of the trench, whereas that of residue film at the trench bottom was 1.5 - 3.5 nm. The SIMS results of no-patterned specimen presented that the permeation depths of boron and chlorine into the Si-substrate were about 40 and 20 nm, respectively. The presence of BxCly and Cl-related Si chemical states was identified from XPS analysis of the residue film.

Integrated real-time and run-to-run control of etch depth in reactive ion etching

1997 ◽  
Vol 10 (1) ◽  
pp. 121-130 ◽  
Author(s):  
M. Hankinson ◽  
T. Vincent ◽  
K.B. Irani ◽  
P.P. Khargonekar
Keyword(s):  
Real Time ◽  
Reactive Ion Etching ◽  
Etch Depth ◽  
Ion Etching

Elevated Temperature Reactive Ion Etching of GaAs and AIGaAs in C2H6 / H2

1989 ◽  
Vol 158 ◽  
Author(s):  
S. J. Pearton ◽  
W. S. Hobson ◽  
K. S. Jones
Keyword(s):  
Elevated Temperature ◽  
Surface Morphology ◽  
Temperature Dependence ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Atomic Composition ◽  
Hydrogen Passivation ◽  
Ion Etching ◽  
Polymer Deposition ◽  
Etched Surface

ABSTRACTThe temperature dependence of etch rate, surface morphology and atomic composition, and depth of hydrogen passivation of Si dopants in n-type GaAs and AIGaAs has been measured for reactive ion etching in C2H6 /H2. The etching of GaAs shows an increase of a factor of two between 150 and 250°C, decreasing at higher temperatures, while there is no temperature dependence for the etch rate of AlGaAs over the range 50-350°C. The As-to-Ga ratio in the nearsurface region of GaAs remains unchanged over the whole temperature range investigated and there is no polymer deposition. The etched surface morphology is smooth for both GaAs and AIGaAs for all temperatures while the depth of Si dopant passivation by hydrogen shows an increase with increasing substrate temperature during the etching treatment.

SF6/02 and CF4/02 Reactive-Ion-Etching-Induced Defects in Silicon Studied by Photoluminescence Spectroscopy: Role of Oxygen

1995 ◽  
Vol 196-201 ◽  
pp. 1807-1812 ◽  
Author(s):  
I.A. Buyanova ◽  
Anne Henry ◽  
Bo Monemar ◽  
J. Lennart Lindström ◽  
Moissei K. Sheinkman ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Photoluminescence Spectroscopy ◽  
Ion Etching ◽  
Induced Defects

Effect of Ge in Cl2 Plasma for Reactive Ion Etching of GaN

2001 ◽  
Vol 693 ◽  
Author(s):  
Tatsuhiro Urushido ◽  
Harumasa Yoshida ◽  
Hideto Miyake ◽  
Kazumasa Hiramatsu
Keyword(s):  
Rough Surface ◽  
Emission Spectroscopy ◽  
Optical Emission Spectroscopy ◽  
Reactive Ion Etching ◽  
Optical Emission ◽  
High Energy ◽  
Quartz Plate ◽  
Ion Etching ◽  
Optical Emissions ◽  
Etched Surface

AbstractWe investigated the effect of Ge and Si in Cl2 plasma on reactive ion etching (RIE) of GaN. The etched surfaces of GaN were smooth, and high etch rates of 0.63 m/min and 0.41 m m/min were obtained using a Ge plate and a Si plate, respectively. A rough surface was formed for the quartz plate without the Ge plate or Si plate. Optical emission spectroscopy revealed optical emissions related to GeClx+ions in Cl2 plasma with the Ge plate, to SiClx+ ions with the Si plate and to Cl+ ions without the Ge or the Si plate. It is considered that the GeClx+ions and SiClx+ ions for RIE of GaN plays an important role in obtaining a smooth etched surface of GaN, and that the high-energy Cl+ ion severely damages the GaN surface.

scholarly journals Influence of the Masking Material and Geometry on the 4H-SiC RIE Etched Surface State

2011 ◽  
Vol 679-680 ◽  
pp. 477-480 ◽  
Author(s):  
Mihai Lazar ◽  
Fabrice Enoch ◽  
Farah Laariedh ◽  
Dominique Planson ◽  
Pierre Brosselard
Keyword(s):  
Surface State ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Etching Process ◽  
Boiling Temperature ◽  
Ion Etching ◽  
Mask Design ◽  
Thick Photoresist ◽  
Etched Surface ◽  
O2 Plasma

The roughness of etched SiC surfaces must be minimized to obtain surfaces with a smooth aspect, avoiding micromasking artifacts originating from re-deposited particles during the etching process. Four varieties of masks, Al, Ni, Si and C, were deposited on the SiC surface by photolithographic process. The C structures were formed by annealing conversion of patterned thick photoresist. On these surfaces, dry etching was performed with an SF6/O2 plasma produced in a Reactive-Ion-Etching (RIE) reactor. Although a better aspect of the surface is obtained with Ni in comparison with Al mask, micromasking could also occur even with Ni if the mask design was not enough spaced out. With C and Si masks, which produce fluorides species with negative boiling temperature, smooth etched surface was obtained without micromasking, even for tight masks covering up to 90% of the SiC surface.

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