Dry Etching Damage in GaAs and Al0.22Ga0.78As

1986 ◽  
Vol 76 ◽  
Author(s):  
D. Kirillov ◽  
C. B. Cooper ◽  
R. A. Powell
Keyword(s):  
Raman Spectroscopy ◽  
Crystal Lattice ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Type Material ◽  
Plasma Cleaning ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Phonon Spectra ◽  
Ar Plasma

ABSTRACTReactive ion etching induced damage in GaAs and Al0.22Ga0.78As was studied using Raman spectroscopy. The phonon spectra of undoped materials allow evaluation of damage to the crystal lattice and the coupled plasmonphonon spectra of n-type material provide a sensitive probe of electrical characteristics. Studies were made of layers exposed to plasmas of Ar, SF6 and SiCl4. Conditions for low damage Ar plasma cleaning and for dielectric cap removal by SF6 were established. Etching in the SiCl4 plasma generally produced strong damage, although low damage etching was observed in a few cases.

scholarly journals Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon
Keyword(s):  
Gas Phase ◽  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Research Work ◽  
Optical Emission ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Ar Plasma ◽  
Ar Gas ◽  
Etching Selectivity

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

Reactive Ion Etching of GaSb, (Ai,Ga)Sb, and InAs for Novel Device Applications.

1990 ◽  
Vol 216 ◽  
Author(s):  
D.C. La Tulipe ◽  
D.J. Frank ◽  
H. Munekata
Keyword(s):  
Etch Rate ◽  
Reactive Ion Etching ◽  
Scanning Electron Micrographs ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Novel Device ◽  
Physical Sputtering ◽  
Chlorine Gas ◽  
Device Applications ◽  
Scanning Electron

ABSTRACT-Although a variety of novel device proposals for GaSb/(Al,Ga)Sb/InAs heterostructures have been made, relatively little is known about processing these materials. We have studied the reactive ion etching characteristics of GaSb, (AI,Ga)Sb, and InAs in both methane/ hydrogen and chlorine gas chemistries. At conditions similar to those reported elsewhere for RIE of InP and GaAs in CH4/H2, the etch rate of (AI,Ga)Sb was found to be near zero, while GaSb and InAs etched at 200Å/minute. Under conditions where the etch mechanism is primarily physical sputtering, the three compounds etch at similar rates. Etching in Cl2 was found to yield anisotropic profiles, with the etch rate of (AI,Ga)Sb increasing with Al mole fraction, while InAs remains unetched. Damage to an InAs “stop layer” was investigated by sheet resistance and mobility measurements. These etching techniques were used to fabricate a novel InAs-channel FET composed of these materials. Several scanning electron micrographs of etching results are shown along with preliminary electrical characteristics.

In-situAfter-treatment Using Low-energy Dry-etching with a CF4/O2Gas Mixture to Remove Reactive Ion Etching Damage

1998 ◽  
Vol 37 (Part 1, No. 4B) ◽  
pp. 2330-2336 ◽  
Author(s):  
Miyako Matsui ◽  
Fumihiko Uchida ◽  
Masayuki Kojima ◽  
Takafumi Tokunaga ◽  
Kazuo Yamazaki ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Dry Etching ◽  
Low Energy ◽  
Ion Etching

Effect of reactive ion etching on the electrical characteristics of poly-emitter bipolar transistors

1988 ◽  
Vol 31 (11) ◽  
pp. 1647-1649
Author(s):  
D. Misra ◽  
C.R. Selvakumar ◽  
E.L. Heasell ◽  
D.J. Roulston
Keyword(s):  
Reactive Ion Etching ◽  
Bipolar Transistors ◽  
Electrical Characteristics ◽  
Ion Etching

Comparisons of Gallium Nitride and Indium Nitride Properties after CF4 / Argon Reactive Ion Etching

2002 ◽  
Vol 743 ◽  
Author(s):  
Marie Wintrebert-Fouquet ◽  
K. Scott ◽  
A. Butcher ◽  
Simon K H Lam
Keyword(s):  
Chemical Vapor Deposition ◽  
Low Temperature ◽  
Vapor Deposition ◽  
Indium Nitride ◽  
Reactive Ion Etching ◽  
Film Surface ◽  
Chemical Vapor ◽  
Electrical Characteristics ◽  
Ion Etching ◽  
Before And After

ABSTRACTWe present a comparative study of the effects of low power reactive ion etching (RIE) on GaN and InN. This new, highly chemical, dry etching, using CF4 and Ar, has been developed for thin nitride films grown at low temperature in our laboratories. GaN films were grown by remote plasma enhanced-laser induced chemical vapor deposition and InN films were grown by radio-frequency RF reactive sputtering. Commercial GaN samples were also examined. Optical and electrical characteristics of the films are reported before and after removing 100 to 200 nm of the film surface by RIE. We have previously shown that the GaN films, although polycrystalline after growth, may be re-crystallized below the growth temperature. Removal of the surface oxide has been found to be imperative since a polycrystalline residue remains on the surface after re-crystallization.

Shallow and deep dry etching of silicon using ICP cryogenic reactive ion etching process

2010 ◽  
Vol 16 (5) ◽  
pp. 863-870 ◽  
Author(s):  
Ü. Sökmen ◽  
A. Stranz ◽  
S. Fündling ◽  
S. Merzsch ◽  
R. Neumann ◽  
...  
Keyword(s):  
Reactive Ion Etching ◽  
Dry Etching ◽  
Etching Process ◽  
Ion Etching

Inductively coupled plasma reactive ion etching of copper thin films using ethylenediamine/butanol/Ar plasma

Vacuum ◽  
2020 ◽  
Vol 181 ◽  
pp. 109421
Author(s):  
Moon Hwan Cha ◽  
Eun Taek Lim ◽  
Sung Yong Park ◽  
Ji Su Lee ◽  
Chee Won Chung
Keyword(s):  
Thin Films ◽  
Inductively Coupled Plasma ◽  
Reactive Ion Etching ◽  
Ion Etching ◽  
Inductively Coupled ◽  
Ar Plasma

Low-Temperature Dry Etching of GaAs and AlGaAs Using 92-MHz Anode-Coupled Chlorine Reactive Ion Etching

1997 ◽  
Vol 36 (Part 1, No. 12B) ◽  
pp. 7650-7654 ◽  
Author(s):  
Tadashi Saitoh ◽  
Tetsuomi Sogawa ◽  
Hiroshi Kanbe
Keyword(s):  
Low Temperature ◽  
Reactive Ion Etching ◽  
Dry Etching ◽  
Ion Etching
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