A Photoelectron Spectroscopy Study of  CF 4 /  H 2 Reactive Ion Etching Residue on Tantalum Disilicide

1989 ◽  
Vol 136 (7) ◽  
pp. 2004-2010 ◽  
Author(s):  
J. H. Thomas ◽  
L. H. Hammer
Keyword(s):  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Spectroscopy Study ◽  
Ion Etching

scholarly journals Dry Etching Performance and Gas-Phase Parameters of C6F12O + Ar Plasma in Comparison with CF4 + Ar

Materials ◽  
2021 ◽  
Vol 14 (7) ◽  
pp. 1595
Author(s):  
Nomin Lim ◽  
Yeon Sik Choi ◽  
Alexander Efremov ◽  
Kwang-Ho Kwon
Keyword(s):  
Gas Phase ◽  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Research Work ◽  
Optical Emission ◽  
Plasma Parameters ◽  
Ion Etching ◽  
Ar Plasma ◽  
Ar Gas ◽  
Etching Selectivity

This research work deals with the comparative study of C6F12O + Ar and CF4 + Ar gas chemistries in respect to Si and SiO2 reactive-ion etching processes in a low power regime. Despite uncertain applicability of C6F12O as the fluorine-containing etchant gas, it is interesting because of the liquid (at room temperature) nature and weaker environmental impact (lower global warming potential). The combination of several experimental techniques (double Langmuir probe, optical emission spectroscopy, X-ray photoelectron spectroscopy) allowed one (a) to compare performances of given gas systems in respect to the reactive-ion etching of Si and SiO2; and (b) to associate the features of corresponding etching kinetics with those for gas-phase plasma parameters. It was found that both gas systems exhibit (a) similar changes in ion energy flux and F atom flux with variations on input RF power and gas pressure; (b) quite close polymerization abilities; and (c) identical behaviors of Si and SiO2 etching rates, as determined by the neutral-flux-limited regime of ion-assisted chemical reaction. Principal features of C6F12O + Ar plasma are only lower absolute etching rates (mainly due to the lower density and flux of F atoms) as well as some limitations in SiO2/Si etching selectivity.

Characterization of Sidewall Residue Film and Atomic Structure of the Trench Formed by BCI3/CI2 Reactive Ion Etching

1989 ◽  
Vol 158 ◽  
Author(s):  
Sun Jin Yun ◽  
Young-Jin Jeon ◽  
Jeong Y. Lee
Keyword(s):  
Photoelectron Spectroscopy ◽  
Secondary Ion Mass Spectrometry ◽  
Reactive Ion Etching ◽  
Surface Region ◽  
Bottom Surface ◽  
Silicon Substrates ◽  
Ion Etching ◽  
Transmission Electron ◽  
Physical Sputtering ◽  
20 Nm

ABSTRACTThe silicon trench etching in BCl3/Cl2 reactive ion etching plasma leads to the intrinsic bonding damage, the permeations of etching species and impurities into silicon substrates, and the deposition of residue film on trench sidewall. The contaminations and the damages in trench were investigated by using high resolution transmission electron microscopy (HRTEM), secondary ion mass spectrometry (SIMS), and x-ray photoelectron spectroscopy (XPS). The microstructure of the rounded bottom surface showed that the surface region was distorted by 2 - 6 atomic layers and the trench etch was mainly limited by the physical sputtering-like mechanism. The damage in the silicon lattice consisted of prominent planar defects roughly confined to {110} and {111} planes. The thickness of sidewall residue film was 10 - 90 nm, which was thinner at deeper region of the trench, whereas that of residue film at the trench bottom was 1.5 - 3.5 nm. The SIMS results of no-patterned specimen presented that the permeation depths of boron and chlorine into the Si-substrate were about 40 and 20 nm, respectively. The presence of BxCly and Cl-related Si chemical states was identified from XPS analysis of the residue film.

Inductively Coupled Plasma Reactive Ion Etching of Ge-SiO2 and SiON Using C2F6 and NF3-Based Gas Mixtures

2007 ◽  
Vol 124-126 ◽  
pp. 503-506
Author(s):  
N.J. Kim ◽  
S.Y. Lee ◽  
G.K. Lee ◽  
J.H. Moon ◽  
Byung Teak Lee
Keyword(s):  
Photoelectron Spectroscopy ◽  
Inductively Coupled Plasma ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Gas Mixtures ◽  
Smooth Surfaces ◽  
Ion Etching ◽  
X Ray ◽  
Inductively Coupled ◽  
Silica Glasses

Inductively coupled plasma reactive ion etching of Ge doped silica glasses and SiON was investigated, using C2F6- and NF3-based gas mixtures. Mesas with smooth surfaces and vertical sidewalls were obtained, with a maximum etch rate of about 310nm/min in the case of C2F6 RIE of Ge-SiO2 and 280 nm/min in the case of SiON. The NF3 plasma yielded slightly higher etch rate, although sloped sidewalls were obtained. Results of the X-ray photoelectron spectroscopy showed little contamination on the etched surfaces.

The Effects of Plasma Induced Damage on The Channel Layers of Ion Implanted GaAs MESFETs during Reactive Ion Etching(RIE) and Plasma Ashing Processes

2002 ◽  
Vol 720 ◽  
Author(s):  
Hokyun Ahn ◽  
Honggu Ji ◽  
Jaekyoung Mun ◽  
Min Park ◽  
Haecheon Kim
Keyword(s):  
Silicon Nitride ◽  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Side Wall ◽  
Microwave Frequency ◽  
Device Performance ◽  
Gate Length ◽  
Ion Etching ◽  
Sheet Resistance Measurement ◽  
Ion Implanted

AbstractThe gate length of GaAs MESFETs is required to be shorter for higher microwave frequency applications. The side-wall process using silicon nitride is one of the effective processes to fabricate short gate length GaAs MESFETs. The side-wall process consists of deposition and anisotropic etching of silicon nitride and delivers plasma induced damages on the channel layers of the devices. In this study, the effects of plasma induced damage on the channel layers of ion implanted GaAs MESFETs during reactive ion etching and plasma ashing processes have been investigated. The plasma induced damage was characterized by sheet resistance measurement, Xray photoelectron spectroscopy(XPS) and auger electron spectroscopy(AES) of different etched surfaces, compared with a chemically wet-etched reference surface. Also the effect of the plasma induced damage on the device performance was investigated. As a result, plasma ashing can deteriorate the plasma-induced damage by RIE.

CHF3 and NH3 Additives for Reactive ion Etching of GaAs Using CCl2F2 and SICI4

1991 ◽  
Vol 240 ◽  
Author(s):  
Kuen-Sane Din ◽  
Gou-Chung Chi
Keyword(s):  
Photoelectron Spectroscopy ◽  
Etch Rate ◽  
Reactive Ion Etching ◽  
Experimental Results ◽  
Etching Process ◽  
Ion Etching ◽  
X Ray ◽  
Gaas Wafer ◽  
Self Bias

ABSTRACTTwo fundamental requirements for RIE are the formation of nearly volatile etch products and sufficiently high physical bombardment to remove all substances on the surface. In this study, the GaAs wafer was in-situ pretreated with NH3 or CHF3 plasma prior to actual etching process. The main etchants are CCl2F2 and SiCl4. By adding these additives to the main etch gases, the resulting etch performance was significantly affected. For instance, DC self-bias of CCl2F2 plasma is relatively low and can increase with such gas addition, thus the etching properties related to physical bombardment change too. CHF3 improve GaAs etch rate in CCl2F2through increasing concentration of reactive chlorine-containing species. While CHF3 enhance etch rate in SiCl4 plasma. The as etched samples were examined with X-ray photoelectron spectroscopy. Details of the experimental results will be described.

The Etching Reaction and Surface Reconstruction of Bismuth Zinc Niobate Thin Film in SF6/Ar Plasma

2013 ◽  
Vol 763 ◽  
pp. 28-32
Author(s):  
Shu Ya Wang ◽  
Yun Ying Fu ◽  
Li Ping Dai ◽  
Guo Jun Zhang
Keyword(s):  
Surface Reconstruction ◽  
Photoelectron Spectroscopy ◽  
Reactive Ion Etching ◽  
Pyrochlore Structure ◽  
Film Surface ◽  
Optimum Process ◽  
Ion Etching ◽  
X Ray ◽  
Bismuth Zinc Niobate ◽  
Ar Plasma

Reactive ion etching (RIE) of bismuth zinc niobate (BZN) thin films using an SF6/Ar plasma has been studied. An optimum process parameters was obtained according to the highest etch rate of 90nm/min. Under this etching condition, the crystal structural properties and surface morphology of the BZN film before and after etching were characterized using X-ray diffraction (XRD), the film showed a surface reconstruction after etching, a cubic pyrochlore structure orientation transition was observed from preferential (222) to (400), and ZnF2 phases were detected. The film surface was chemically analyzed by X-ray photoelectron spectroscopy (XPS) to investigate the reactive ion etching mechanism. A zinc-rich surface was formed because low-volatile ZnF2 residues were difficult to remove.

Raman Spectroscopy Study of Damage in n+ - GaAs Introduced by H2 and CH4/H2 RIE

1991 ◽  
Vol 240 ◽  
Author(s):  
I. De Wolf ◽  
M. Van Hove ◽  
R.-G. Pereira ◽  
M. Van Rossum ◽  
H. E. Maes ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Structural Damage ◽  
Reactive Ion Etching ◽  
Surface Region ◽  
Effect Of Temperature ◽  
Spectroscopy Study ◽  
Surface Layers ◽  
Ion Etching ◽  
Crystal Damage ◽  
Plasma Annealing

ABSTRACTRaman spectroscopy is used to study crystal damage and electrical damage in n+-GaAs produced by reactive ion etching (REE). H2 RIE is compared with CH4/H2 RIE and the effect of temperature annealing is studied. The results are compared with C-V analysis. It is found that structural damage introduced by RIE in the surface layers of the sample is larger for the H2 plasma than for the CH4/H2 plasma. Annealing results in a decrease of this structural damage. H2 RIE as well as CH4/H2 RIE cause an increase of the inactive surface region. This increase is found to be larger for the H2 RDE. C-V experiments show that annealing results in a reactivation and associated decrease of the width of the inactive region.

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