Quantum Well Shape Modification in Quaternary Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Köteles ◽  
A. N. M. Masum Choudhury ◽  
A. Levy ◽  
B. Elman ◽  
P. Melman ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optoelectronic Devices ◽  
Low Energy ◽  
Shape Modification ◽  
Simple Process ◽  
Thermally Driven ◽  
Inp Substrates ◽  
First Time ◽  
Lattice Matched

ABSTRACTQuantum well interdiffusion has been employed, for the First time in the quaternary InGaAsP/InP system (grown lattice matched to InP substrates), in order to modify the as-grown, nominally square, shapes of single quantum wells so as to increase their bandgap energies. This was accomplished, in a spatially selective manner, by using low energy ion implantation through a mask to generate vacancies. Subsequent rapid thermal annealing drove these vacancies down to the quantum wells where their presence enhanced the thermally driven interdiffusion of atoms between the well and barrier layers. The goal of this work is to develop a simple process for the integration of optoelectronic devices with differing functions.

45° REFLECTOMETRY OF SEMICONDUCTOR QUANTUM WELLS

2001 ◽  
Vol 15 (17n19) ◽  
pp. 683-687
Author(s):  
A. SILVA-CASTILLO ◽  
F. PEREZ-RODRIGUEZ
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Growth Direction ◽  
Angle Of Incidence ◽  
Near Surface ◽  
New Information ◽  
Difference Formula ◽  
Exciton Polaritons ◽  
The Difference ◽  
First Time

We have applied the 45° reflectometry for the first time to study exciton-polaritons in quantum wells. The 45° reflectometry is a new polarization-modulation technique, which is based on the measurement of the difference [Formula: see text] between the p-polarization reflectivity (Rp) and the squared s-polarization reflectivity [Formula: see text] at an angle of incidence of 45°. We show that [Formula: see text] spectra may provide qualitatively new information on the exciton-polariton modes in a quantum well. These optical spectra turn out to be very sensitive to the zeros of the dielectric function along the quantum-well growth direction and, therefore, allow to identify the resonances associated with the Z exciton-polariton mode. We demonstrate that 45° reflectometry could be a powerful tool for studying Z exciton-polariton modes in near-surface quantum wells, which are difficult to observe in simple spectra of reflectivity Rp

Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Ghisoni ◽  
A. W. Rivers ◽  
K. Lee ◽  
G. Parry ◽  
X. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optoelectronic Devices ◽  
Vacancy Diffusion ◽  
Device Integration ◽  
Free Vacancy

ABSTRACTIn this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic device integration. We will discuss the mechanism, practical considerations and some possible applications.

Intersubband Transitions In Ingaas/Inalas Multiple Quantum Wells Grown On Inp Substrate

2001 ◽  
Vol 692 ◽  
Author(s):  
Qiaoying Zhou ◽  
M. O. Manasreh ◽  
B. D. Weaver ◽  
M. Missous
Keyword(s):  
Quantum Wells ◽  
Conduction Band ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Interband Transitions ◽  
Intersubband Transitions ◽  
Quantum Well Structures ◽  
Inp Substrate ◽  
Inp Substrates ◽  
Lattice Matched

AbstractIntersubband transitions in In0.52Ga0.48As/In0.52Al0.48As multiple quantum wells grown on lattice matched InP substrates were investigated using Fourier transform infrared (FTIR) absorption and photoluminescence (FTPL) techniques. The well width was tailored to produce excited states resonant in the conduction band, at the edge of the conduction band, and confined in the quantum wells. Interband transitions were also probed using FTPL and optical absorption techniques. The FTPL spectra show that three interband transitions exist in the quantum well structures with well width larger than 30 Å. The intersubband transitions in this class of quantum wells seem to withstand proton irradiation with doses higher than those used to deplete the intersubband transitions in the GaAs/AlGaAs multiple quantum wells.

A fully verified theoretical analysis of strain-photonic coupling for quantum wells embedded in wavy nanoribbons

Nanoscale ◽  
2018 ◽  
Vol 10 (26) ◽  
pp. 12657-12664 ◽  
Author(s):  
Jiushuang Zhang ◽  
Yun Xu ◽  
Yu Jiang ◽  
Lin Bai ◽  
Huamin Chen ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Quantum Well ◽  
Quantum Wells ◽  
Band Gap ◽  
Optoelectronic Devices ◽  
Strain Engineering ◽  
Research Field ◽  
Semiconductor Quantum Well

For optoelectronic devices, an attractive research field involves the flexible adjustment of the band gap in semiconductor quantum well (QW) structures by strain engineering.

Polarization-insensitive quantum well optoelectronic devices using quantum well shape modification

1997 ◽  
Author(s):  
Emil S. Koteles ◽  
Jian Jun He ◽  
N. Sylvain Charbonneau ◽  
Philip J. Poole ◽  
Geof C. Aers ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optoelectronic Devices ◽  
Shape Modification ◽  
Polarization Insensitive

Magneto-Optical Studies of GaAs-AlGaAs Modulation Doped Quantum Wells Under Hydrostatic Pressure

1989 ◽  
Vol 160 ◽  
Author(s):  
Weimin Zhou ◽  
Clive H. Perry ◽  
John M. Worlock
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Free Electron ◽  
Pressure Coefficient ◽  
Band Gaps ◽  
Interband Transitions ◽  
Optical Studies ◽  
Electron Effective Mass ◽  
Quantum Well Structures ◽  
First Time

AbstractHigh pressure photoluminescence measurements on modulation doped GaAs-AlGaAs quantum well structures have been performed for the first time with applied magnetic fields up to 15 Tesla. We have observed Landau fans from interband transitions of the 2D free electron gas between 0 and 8.5 kbar. In this pressure range the electron effective mass in GaAs increased at the rate of 2.6% per kbar. Above 9 kbar, the free Landau transitions disappeared and bound magneto-exiton behaviour dominated the spectrum. The influence of pressure on the band-gaps causes a controlled trapping of the free electron from the GaAs well to Si donors (DX centers) in the AlGaAs layers. Above 9 kbar the pressure coefficient of the GaAs band gap was found to be 10.4 meV/kbar which is comparable to the accepted value in undoped GaAs quantum well structures.

scholarly journals XXIII Международный симпозиум Нанофизика и наноэлектроника", Нижний Новгород, 11-14 марта 2019 г. Гетероструктуры с GaAs/GaP-квантовыми ямами, выращенные на Si-подложках

2019 ◽  
Vol 53 (9) ◽  
pp. 1167
Author(s):  
Д.С. Абрамкин ◽  
М.О. Петрушков ◽  
М.А. Путято ◽  
Б.Р. Семягин ◽  
Е.А. Емельянов ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Temperature Stability ◽  
Nonradiative Recombination ◽  
High Concentration ◽  
Light Emitting ◽  
Highly Efficient ◽  
Hybrid Substrates ◽  
Recombination Centers ◽  
Lattice Matched

AbstractMolecular-beam epitaxy is used to produce GaP/Si hybrid substrates that allow the growth of highly efficient light-emitting heterostructures with GaAs/GaP quantum wells. Despite the relatively high concentration of nonradiative-recombination centers in GaP/Si layers, GaAs/GaP quantum-well heterostructures grown on GaP/Si hybrid substrates are highly competitive in terms of efficiency and temperature stability of luminescence to similar heterostructures grown on lattice-matched GaP substrates.

Studies of Recombination Transfer in Alloys and Thin Quantum Wells of Ga0.47In0.53As/InP Using the Optically Detected Impact Ionisation Technique

1991 ◽  
Vol 240 ◽  
Author(s):  
P. OMLING
Keyword(s):  
Experimental Data ◽  
Quantum Well ◽  
Quantum Wells ◽  
Impact Ionisation ◽  
Optically Detected ◽  
Lattice Matched

ABSTRACTThe possibilities of the optically detected impact ionisation (ODII) technique are demonstrated. It is shown how the ODII technique can be used to extract detailed spectroscopie information in thick InGaAs layers where resolved peaks from free excitons, bound excitons, and free-to-acceptor recombinations are obtained. In an investigation of single- and multiple-monolayer quantum wells of lattice-matched GalnAs in InP the experimental data show how the transfer of impact ionised electrons from the InP layers to the different InGaAs quantum wells, where they recombine as free excitons, can be studied. The recombination in a thicker quantum well (18 monolayer) shows a more complicated behaviour, and an explanation based on defect-related recombination, including bound-exciton and free-to-bound recombinations, is suggested.

Laser-Modified Chemical Beam Epitaxy of InGaAs/GaAs Multiple Quantum Wells Using Tris-Dimethylaminoarsenic

1994 ◽  
Vol 354 ◽  
Author(s):  
H.K. Dong ◽  
N.Y. Li ◽  
C.W. Tu
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Laser Irradiation ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Chemical Beam Epitaxy ◽  
Quantum Well Structures ◽  
X Ray ◽  
Strained Quantum Well ◽  
First Time

AbstractWe report for the first time laser-modified chemical beam epitaxy (CBE) of InGaAs/GaAs multiple quantum well (MQW) structures using trimethylindium (TMIn), triethylgallium (TEGa), and tris-dimethylaminoarsenic (TDMAAs), a safer alternative to arsine. X-ray rocking curve (XRC) and low-temperature photoluminescence (PL) measurements were used to characterize the pseudomorphic strained quantum well structures. As determined by the X-ray simulation, laser irradiation during the InGaAs well growth was found to enhance the InGaAs growth rate and reduce the indium concentration in the substrate temperature range studied, 440-S00°C, where good interfaces can be achieved. We attribute these changes to laser-enhanced decomposition of TEGa and laser-enhanced desorption of TDMAAs. With laser irradiation, lateral variation of PL exciton peaks was observed, and the PL peaks became narrower.

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