A fully verified theoretical analysis of strain-photonic coupling for quantum wells embedded in wavy nanoribbons

Nanoscale ◽  
2018 ◽  
Vol 10 (26) ◽  
pp. 12657-12664 ◽  
Author(s):  
Jiushuang Zhang ◽  
Yun Xu ◽  
Yu Jiang ◽  
Lin Bai ◽  
Huamin Chen ◽  
...  
Keyword(s):  
Theoretical Analysis ◽  
Quantum Well ◽  
Quantum Wells ◽  
Band Gap ◽  
Optoelectronic Devices ◽  
Strain Engineering ◽  
Research Field ◽  
Semiconductor Quantum Well

For optoelectronic devices, an attractive research field involves the flexible adjustment of the band gap in semiconductor quantum well (QW) structures by strain engineering.

Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Ghisoni ◽  
A. W. Rivers ◽  
K. Lee ◽  
G. Parry ◽  
X. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optoelectronic Devices ◽  
Vacancy Diffusion ◽  
Device Integration ◽  
Free Vacancy

ABSTRACTIn this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic device integration. We will discuss the mechanism, practical considerations and some possible applications.

Strain-Induced Lateral Confinement of Carriers in Semiconductor Quantum Wells

1988 ◽  
Vol 144 ◽  
Author(s):  
K. Kash ◽  
R. Bhat ◽  
Derek D. Mahoney ◽  
J.M. Worlock ◽  
P.S.D. Lin ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Band Gap ◽  
Red Shift ◽  
Lateral Confinement ◽  
Semiconductor Quantum Wells ◽  
20 Nm ◽  
Ingaas Quantum Well

ABSTRACTWe describe here an effort to provide lateral confinement of carriers within a continuous InGaAs quantum well by creating a pattern of strain in the well. A compressed InGaAsP layer overlying the quantum well and the InP barrier was patterned into submicron stressor wires by etching to within approximately 20 nm of the InP barrier. The relaxation of the compression at the edges of the quaternary stressors resulted in dilation of the quantum well material under their centers, thus lowering the band gap of the material, providing confinement for both electrons and holes there. We observed a red shift of the quantum well luminescence of 7 meV for 400 nm wide wires, evidence for the strain-induced lateral confinement. This is the first observation of a red-shifted band gap in submicron strain-confining structures.

Quantum Well Shape Modification in Quaternary Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Köteles ◽  
A. N. M. Masum Choudhury ◽  
A. Levy ◽  
B. Elman ◽  
P. Melman ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optoelectronic Devices ◽  
Low Energy ◽  
Shape Modification ◽  
Simple Process ◽  
Thermally Driven ◽  
Inp Substrates ◽  
First Time ◽  
Lattice Matched

ABSTRACTQuantum well interdiffusion has been employed, for the First time in the quaternary InGaAsP/InP system (grown lattice matched to InP substrates), in order to modify the as-grown, nominally square, shapes of single quantum wells so as to increase their bandgap energies. This was accomplished, in a spatially selective manner, by using low energy ion implantation through a mask to generate vacancies. Subsequent rapid thermal annealing drove these vacancies down to the quantum wells where their presence enhanced the thermally driven interdiffusion of atoms between the well and barrier layers. The goal of this work is to develop a simple process for the integration of optoelectronic devices with differing functions.

Photoluminescence In Strain Compensated Siisigec Multiple Quantum Wells

1998 ◽  
Vol 533 ◽  
Author(s):  
R. Hartmann ◽  
U. Gennser ◽  
D. Grützmacher ◽  
H. Sigg ◽  
E. Müller ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Band Gap ◽  
Valence Band ◽  
Band Alignment ◽  
Multiple Quantum ◽  
Type I ◽  
Strain Compensation ◽  
Quantum Well States ◽  
Good Agreement

AbstractThe effect of strain compensation on the band gap and band alignment of Si/SiGeC MQWs is studied by photoluminescence (PL) spectroscopy. Evidence for type-I band alignment of strain reduced SiGeC MQWs is found. Values for the conduction and valence band offsets are given. A band gap reduction for exactly strain compensated SiGeC compared to compressive SiGeC is observed. This behavior is interpreted in terms of strain induced splitting and confinement shifts of the quantum well states. A good agreement between the model and the PL data is obtained.

scholarly journals Strain Engineering of the Band Gap of HgTe Quantum Wells Using Superlattice Virtual Substrates

2016 ◽  
Vol 117 (8) ◽  
Author(s):  
Philipp Leubner ◽  
Lukas Lunczer ◽  
Christoph Brüne ◽  
Hartmut Buhmann ◽  
Laurens W. Molenkamp
Keyword(s):  
Quantum Wells ◽  
Band Gap ◽  
Strain Engineering
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