Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Ghisoni ◽  
A. W. Rivers ◽  
K. Lee ◽  
G. Parry ◽  
X. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optoelectronic Devices ◽  
Vacancy Diffusion ◽  
Device Integration ◽  
Free Vacancy

ABSTRACTIn this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic device integration. We will discuss the mechanism, practical considerations and some possible applications.

Red-shift in the InGaAsP/GaInP active region using impurity free vacancy diffusion induced quantum well intermixing

2015 ◽  
Vol 644 ◽  
pp. 398-403 ◽  
Author(s):  
Tao Lin ◽  
Haoqing Zhang ◽  
Ruijuan Sun ◽  
Yupeng Duan ◽  
Nan Lin ◽  
...  
Keyword(s):  
Active Region ◽  
Quantum Well ◽  
Red Shift ◽  
Vacancy Diffusion ◽  
Quantum Well Intermixing ◽  
Free Vacancy

Intermixing Characteristics of Strained-InGaAs/InGaAsP Multiple Quantum Well Structure Using Impurity-Free Vacancy Diffusion

1999 ◽  
Vol 38 (Part 2, No. 11B) ◽  
pp. L1303-L1305 ◽  
Author(s):  
Jung Woo Park ◽  
Hyun Soo Kim ◽  
Jung Soo Kim ◽  
Dae Kon Oh ◽  
Kwang Ryong Oh ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Vacancy Diffusion ◽  
Quantum Well Structure ◽  
Free Vacancy

Impurity-free Vacancy Diffusion Induces Quantum Well Intermixing in 915 nm Semiconductor Laser Based on SiO2 Film

2018 ◽  
Vol 47 (3) ◽  
pp. 314003
Author(s):  
王鑫 WANG Xin ◽  
赵懿昊 ZHAO Yi-hao ◽  
朱凌妮 ZHU Ling-ni ◽  
侯继达 HOU Ji-da ◽  
马骁宇 MA Xiao-yu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Semiconductor Laser ◽  
Sio2 Film ◽  
Vacancy Diffusion ◽  
Quantum Well Intermixing ◽  
Free Vacancy

scholarly journals Low-Loss Buried-Heterostructure Optical Waveguide Based on Impurity-Free-Vacancy-Diffusion Quantum Well Intermixing

2020 ◽  
Vol 12 (2) ◽  
pp. 1-7
Author(s):  
Yang-Jeng Chen ◽  
Rih-You Chen ◽  
Chih-Hsien Chen ◽  
Yu-Hung Lin ◽  
Cong-Long Chen ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Waveguide ◽  
Vacancy Diffusion ◽  
Low Loss ◽  
Quantum Well Intermixing ◽  
Buried Heterostructure ◽  
Free Vacancy

Postgrowth control of GaAs/AlGaAs quantum well shapes by impurity-free vacancy diffusion

1994 ◽  
Vol 30 (5) ◽  
pp. 1189-1195 ◽  
Author(s):  
I. Gontijo ◽  
T. Krauss ◽  
J.H. Marsh ◽  
R.M. De La Rue
Keyword(s):  
Quantum Well ◽  
Vacancy Diffusion ◽  
Free Vacancy

Uniform intermixing of quantum wells in p-i-n modulator structures by impurity free vacancy diffusion

1995 ◽  
Vol 24 (3) ◽  
pp. 197-202 ◽  
Author(s):  
S. J. Lycett ◽  
A. J. Dewdney ◽  
M. Ghisoni ◽  
C. E. Norman ◽  
R. Murray ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Vacancy Diffusion ◽  
Free Vacancy

Quantum Well Shape Modification in Quaternary Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Köteles ◽  
A. N. M. Masum Choudhury ◽  
A. Levy ◽  
B. Elman ◽  
P. Melman ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optoelectronic Devices ◽  
Low Energy ◽  
Shape Modification ◽  
Simple Process ◽  
Thermally Driven ◽  
Inp Substrates ◽  
First Time ◽  
Lattice Matched

ABSTRACTQuantum well interdiffusion has been employed, for the First time in the quaternary InGaAsP/InP system (grown lattice matched to InP substrates), in order to modify the as-grown, nominally square, shapes of single quantum wells so as to increase their bandgap energies. This was accomplished, in a spatially selective manner, by using low energy ion implantation through a mask to generate vacancies. Subsequent rapid thermal annealing drove these vacancies down to the quantum wells where their presence enhanced the thermally driven interdiffusion of atoms between the well and barrier layers. The goal of this work is to develop a simple process for the integration of optoelectronic devices with differing functions.

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