Laser-Modified Chemical Beam Epitaxy of InGaAs/GaAs Multiple Quantum Wells Using Tris-Dimethylaminoarsenic

1994 ◽  
Vol 354 ◽  
Author(s):  
H.K. Dong ◽  
N.Y. Li ◽  
C.W. Tu
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Laser Irradiation ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Chemical Beam Epitaxy ◽  
Quantum Well Structures ◽  
X Ray ◽  
Strained Quantum Well ◽  
First Time

AbstractWe report for the first time laser-modified chemical beam epitaxy (CBE) of InGaAs/GaAs multiple quantum well (MQW) structures using trimethylindium (TMIn), triethylgallium (TEGa), and tris-dimethylaminoarsenic (TDMAAs), a safer alternative to arsine. X-ray rocking curve (XRC) and low-temperature photoluminescence (PL) measurements were used to characterize the pseudomorphic strained quantum well structures. As determined by the X-ray simulation, laser irradiation during the InGaAs well growth was found to enhance the InGaAs growth rate and reduce the indium concentration in the substrate temperature range studied, 440-S00°C, where good interfaces can be achieved. We attribute these changes to laser-enhanced decomposition of TEGa and laser-enhanced desorption of TDMAAs. With laser irradiation, lateral variation of PL exciton peaks was observed, and the PL peaks became narrower.

Growth and Characterization Of GexSi1−x/ Si Multiple Quantum Well Structures

1992 ◽  
Vol 263 ◽  
Author(s):  
D.W. Greve ◽  
R. Misra ◽  
M.A. Capano ◽  
T.E. Schlesinger
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Multiple Quantum Well ◽  
Small Variation ◽  
Multiple Quantum ◽  
X Ray Diffraction ◽  
High Quality ◽  
Quantum Well Structures ◽  
X Ray

ABSTRACTWe report on the growth and characterization of multiple quantum well structures by UHV/ CVD epitaxy. X- ray diffraction is used to verify the expected layer periodicity and to determine the quantum well thickness. Photoluminescence measurements show peaks which we associate with recombination of excitons in the quantum wells. The measurements are consistent with high quality layers with small variation in quantum well thickness across a wafer.

Growth of InP/InGaAs multiple quantum well structures by chemical beam epitaxy

1992 ◽  
Vol 120 (1-4) ◽  
pp. 328-332 ◽  
Author(s):  
P.J. Skevington ◽  
M.A.G. Halliwell ◽  
M.H. Lyons ◽  
S.J. Amin ◽  
M.A.Z. Rejman-Greene ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Chemical Beam Epitaxy ◽  
Quantum Well Structures

Use of Valved, Solid Group V Sources for the Growth of GaAs/GaInP Heterostructures by Molecular Beam Epitaxy

1992 ◽  
Vol 281 ◽  
Author(s):  
F. G. Johnson ◽  
G. W. Wicks ◽  
R. E. Viturro ◽  
R. Laforce
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Quantum Wells ◽  
Molecular Beam ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Misfit Dislocations ◽  
Group V ◽  
X Ray

ABSTRACTWe report on the first growth of GaAs/Ga0.5In0.5P heterostructures by conventional molecular beam epitaxy using solid-source valved crackers to supply both the arsenic and the phosphorus fluxes. By regulating the group V fluxes with the cracker needle valves, arsenide-phosphide heterostructures were successfully grown with virtually no group V intermixing between layers. For comparison, similar heterostructure samples were grown using only the mechanical shutters to switch between group V fluxes, and the resulting layers were severely intermixed. The amount of group V intermixing was shown to be independent of whether As2 or As4 fluxes were used to grow the layers. A GaAs/Ga0.5In0.5P multiple quantum well sample was also grown using the valved crackers. Photoluminescence peaks were clearly observed from 40 Å, 80 Å, and 300 Å GaAs quantum wells, but no luminescence was detected from a 20 Å well. An 80Å GaAs/ 80Å Ga0.5In0.5P superlattice was grown, and superlattice satellite peaks were observed in the X-ray rocking curves. The appearance of misfit dislocations suggests localized intermixing at the interfaces.

Low Pressure OMVPE Grown Compressive Strained Ingaas QWS Surrounded by Tensile Strained Ingaas Spacers

1996 ◽  
Vol 441 ◽  
Author(s):  
O. A. Laboutine ◽  
A. G. Choo ◽  
S. H. Kim ◽  
N. H. Kim ◽  
H. S. Park ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Line Width ◽  
Deposition Temperature ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Strained Layers ◽  
X Ray ◽  
Barrier Layers ◽  
Ga Content

AbstractThe photoluminescence (PL) measurement of unstrained and compressive strained InxGa1−xAs quantum wells (QWs) demonstrated that the interfaces had a roughness of 1 to 2.5 monolayers (ML). The spacer layers of tensile strained InyGa1−yAs were inserted between a compressive strained In0.7Ga0.3As QW and the InP barrier layers. PL spectra of the In0.7Ga0.3As/InyGa1−yAs/InP structures grown at 605°C became significantly narrower with increasing Ga content in the spacer layers above (1−y)=0.6. The PL line width of the In0.7Ga0.3As/In0.3Ga0.7As alternatingly strained multiple quantum well (MQW) structures gradually decreased when the number of periods and the deposition temperature increased. The structure, consisting of 4 periods grown at 635°C, exhibited a PL line width of about 4 meV which corresponded to the QW thickness fluctuation of 0.5 ML. The superlattice satellites of X-ray rocking curves of MQW structures were better defined under an envelope corresponding to the tensile strained layers.

X-ray composition analysis of nonpolar GaInN/GaN multiple quantum well structures

2010 ◽  
Vol 248 (3) ◽  
pp. 616-621 ◽  
Author(s):  
H. Bremers ◽  
A. Schwiegel ◽  
L. Hoffmann ◽  
H. Jönen ◽  
U. Rossow ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Composition Analysis ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
X Ray

Emission Mechanisms in UV Emitting GaN/AlN Multiple Quantum Well Structures

2003 ◽  
Vol 798 ◽  
Author(s):  
Madalina Furis ◽  
Alexander N. Cartwright ◽  
Hong Wu ◽  
William J. Schaff
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Temperature Dependence ◽  
Multiple Quantum Well ◽  
Activation Energies ◽  
Inhomogeneous Broadening ◽  
Binding Energies ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Donor And Acceptor

ABSTRACTThe need for efficient UV emitting semiconductor sources has prompted the study of a number of heterostructures of III-N materials. In this work, the temperature dependence of the photoluminescence (PL) properties of UV-emitting GaN/AlN multiple quantum well (MQW) heterostructures were investigated in detail. In all samples studied, the structure consisted of 20 GaN quantum wells, with well widths varying between 7 and 15 Å, clad by 6nm AlN barriers, grown on top of a thick AlN buffer that was deposited on sapphire by molecular beam epitaxy. The observed energy corresponding to the peak of the emission spectrum is in agreement with a model that includes the strong confinement present in these structures and the existence of the large built-in piezoelectric field and spontaneous polarization present inside the wells. The observed emission varies from 3.5 eV (15 Å well) to 4.4 eV (7 Å well). Two activation energies associated with the photoluminescence quenching are extracted from the temperature dependence of the time-integrated PL intensity. These activation energies are consistent with donor and acceptor binding energies and the PL is dominated by recombination involving carriers localized on donor and/or acceptor states.Moreover, the temperature dependence of the full width at half-maximum (FWHM) of the PL feature indicates that inhomogeneous broadening dominates the spectrum at all temperatures. For the 15 and 13 Å wells, we estimate that the electron-phonon interaction is responsible for less than 30% of the broadening at room temperature. This broadening is negligible in the 9 Å wells over the entire temperature range studied. Well width fluctuations are primarily responsible for the inhomogeneous broadening, estimated to be of the order of 250meV for one monolayer fluctuation in well width.

GaAs–AlGaAs multiple-quantum-well lasers for monolithic integration with optical modulators

1991 ◽  
Vol 69 (3-4) ◽  
pp. 491-496 ◽  
Author(s):  
F. Chatenoud ◽  
K. M. Dzurko ◽  
M. Dion ◽  
D. Moss ◽  
R. Barber ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Cavity Length ◽  
Multiple Quantum Well ◽  
Monolithic Integration ◽  
Quantum Well Lasers ◽  
Multiple Quantum ◽  
Optical Modulators ◽  
Single Quantum Well ◽  
Quantum Well Structures

Calculations of multiple-quantum-well laser threshold current show that a common minimum current value exists for each number of wells, at an appropriate cavity length. This optimum cavity length decreases rapidly with increasing number of wells, for instance from about 300 to 110 μm for one to three wells. Granded-index separate-confinement heterostructure (GRINSCH) lasers with 1–10 quantum wells, grown by molecular beam epitaxy, show consistently low threshold currents that agree well with theoretical predictions. Lasing is achieved at 160 A cm−2 and 4.6 mA for broad-area and ridge waveguide single-quantum-well devices, respectively. The field-dependent electroabsorption of these devices when operating as wave-guide modulators indicates good modulation properties for one and three quantum-well structures, with on:off ratios above 55 at lasing wavelength. The behavior becomes more complex with increasing number of wells. This systematic study of discrete multiple-quantum-well lasers and modulators demonstrates that GRINSCH structures with 1–3 wells are the most suitable for monolithic integration. Design rules for the laser cavity are also presented for numbers of wells ranging from 1 to 10.

Electron–electron inter-subband scattering in GaAs quantum wells

1996 ◽  
Vol 74 (S1) ◽  
pp. 252-255
Author(s):  
Zhi Zhong Xu ◽  
D. Morris
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Electron Scattering ◽  
Multiple Quantum Well ◽  
Golden Rule ◽  
Multiple Quantum ◽  
Hot Electron ◽  
Quantum Well Structures ◽  
Scattering Rate ◽  
Relaxation Channel

The role of electron–electron scattering in the dynamics of inter-subband relaxation in GaAs quantum wells is investigated theoretically. The scattering rate is calculated using the Fermi golden rule, as a function of the carrier densities. The dependence of the inter-subband relaxation time on the quantum-well width is also investigated. Calculations are performed for multiple quantum-well structures with well widths varying from 80 to 240 Å (1 Å = 10−10 m). The hot electron distribution and the subband occupation function are taken into account in these calculations. Results show that the electron–electron scattering rate increases linearly as a function of the carrier densities. A band-filling effect limits the efficiency of this mechanism under high carrier densities (> 1012 cm−2). For thick well (180 Å) structures, this relaxation channel is as efficient as the phonon relaxation channel.

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