Polarization-insensitive quantum well optoelectronic devices using quantum well shape modification

1997 ◽  
Author(s):  
Emil S. Koteles ◽  
Jian Jun He ◽  
N. Sylvain Charbonneau ◽  
Philip J. Poole ◽  
Geof C. Aers ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optoelectronic Devices ◽  
Shape Modification ◽  
Polarization Insensitive

Quantum Well Shape Modification in Quaternary Quantum Wells

1991 ◽  
Vol 240 ◽  
Author(s):  
Emil S. Köteles ◽  
A. N. M. Masum Choudhury ◽  
A. Levy ◽  
B. Elman ◽  
P. Melman ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optoelectronic Devices ◽  
Low Energy ◽  
Shape Modification ◽  
Simple Process ◽  
Thermally Driven ◽  
Inp Substrates ◽  
First Time ◽  
Lattice Matched

ABSTRACTQuantum well interdiffusion has been employed, for the First time in the quaternary InGaAsP/InP system (grown lattice matched to InP substrates), in order to modify the as-grown, nominally square, shapes of single quantum wells so as to increase their bandgap energies. This was accomplished, in a spatially selective manner, by using low energy ion implantation through a mask to generate vacancies. Subsequent rapid thermal annealing drove these vacancies down to the quantum wells where their presence enhanced the thermally driven interdiffusion of atoms between the well and barrier layers. The goal of this work is to develop a simple process for the integration of optoelectronic devices with differing functions.

Progress in Monolithic Photonic Integration Using Quantum Well Shape Modification Enhanced by Ion Implantation

1999 ◽  
Vol 607 ◽  
Author(s):  
Emil S. Koteles
Keyword(s):  
Quantum Well ◽  
Ion Implantation ◽  
Optoelectronic Devices ◽  
Photonic Integration ◽  
Shape Modification ◽  
Commercial Viability ◽  
Integrated Devices

AbstractProgress in the development of ion implantation enhanced quantum well shape modification as a technique for monolithically integrating optoelectronic devices of varying functionalities is reviewed. Fundamental issues related to the physics of the technique, both material issues and device issues, are considered and the performance of both discrete and integrated devices is discussed. The main conclusion of this review is that there are no inherent drawbacks to the utilization of this technique and some serendipitous advantages but that more work on reproducibility and reliability is required to ensure commercial viability.

Vacancy Promoted Interdiffusion in Quantum Wells and Applications to Optoelectronic Devices

1992 ◽  
Vol 262 ◽  
Author(s):  
M. Ghisoni ◽  
A. W. Rivers ◽  
K. Lee ◽  
G. Parry ◽  
X. Zhang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Optoelectronic Devices ◽  
Vacancy Diffusion ◽  
Device Integration ◽  
Free Vacancy

ABSTRACTIn this paper we shall look at a technique, known as impurity free vacancy diffusion (IFVD) for selectively altering the optoelectronic response of quantum well material after growth with a view to monolithic device integration. We will discuss the mechanism, practical considerations and some possible applications.

Polarization insensitive gain medium with hybrid strained quantum well

2002 ◽  
Vol 34 (8) ◽  
pp. 595-597
Author(s):  
Jingzhi Yin ◽  
Guotong Du ◽  
Shuping Liu ◽  
Zongshun Liu ◽  
Xinqiang Wang ◽  
...  
Keyword(s):  
Quantum Well ◽  
Gain Medium ◽  
Polarization Insensitive ◽  
Strained Quantum Well
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