A combined scanning tunneling microscope–atomic layer deposition tool

2011 ◽  
Vol 82 (12) ◽  
pp. 123704 ◽  
Author(s):  
James F. Mack ◽  
Philip B. Van Stockum ◽  
Hitoshi Iwadate ◽  
Fritz B. Prinz
Keyword(s):  
Atomic Layer Deposition ◽  
Scanning Tunneling Microscope ◽  
Atomic Layer ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Layer Deposition

Scanning tunneling spectroscopy of lead sulfide quantum wells fabricated by atomic layer deposition

2010 ◽  
Vol 21 (48) ◽  
pp. 485402 ◽  
Author(s):  
Wonyoung Lee ◽  
Neil P Dasgupta ◽  
Hee Joon Jung ◽  
Jung-Rok Lee ◽  
Robert Sinclair ◽  
...  
Keyword(s):  
Atomic Layer Deposition ◽  
Quantum Wells ◽  
Lead Sulfide ◽  
Atomic Layer ◽  
Scanning Tunneling Spectroscopy ◽  
Tunneling Spectroscopy ◽  
Scanning Tunneling ◽  
Layer Deposition

scholarly journals Robust procedure for creating and characterizing the atomic structure of scanning tunneling microscope tips

2017 ◽  
Vol 8 ◽  
pp. 2389-2395 ◽  
Author(s):  
Sumit Tewari ◽  
Koen M Bastiaans ◽  
Milan P Allan ◽  
Jan M van Ruitenbeek
Keyword(s):  
Atomic Structure ◽  
Scanning Tunneling Microscope ◽  
Critical Role ◽  
Atomic Layer ◽  
Atomic Scale ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Stm Tips

Scanning tunneling microscopes (STM) are used extensively for studying and manipulating matter at the atomic scale. In spite of the critical role of the STM tip, procedures for controlling the atomic-scale shape of STM tips have not been rigorously justified. Here, we present a method for preparing tips in situ while ensuring the crystalline structure and a reproducibly prepared tip structure up to the second atomic layer. We demonstrate a controlled evolution of such tips starting from undefined tip shapes.

GaAs and Si Assisted Etching using a Scanning Tunneling Microscope

1991 ◽  
Vol 236 ◽  
Author(s):  
Masakazu Baba ◽  
Shinji Matsui
Keyword(s):  
Scanning Tunneling Microscope ◽  
Gas Flow ◽  
Low Voltage ◽  
Atomic Layer ◽  
Flow Time ◽  
Scanning Tunneling ◽  
Tunneling Microscope ◽  
Etching Profile ◽  
Atomic Layer Etching

AbstractGaAs etching with Cl2 gas is studied with a scanning tunneling microscope (STM). Both Cl2 gas and tunnel electron assist etching occur under the tip during scanning and the etching profile is found to depend on the gas flow time. GaAs and Si patterns with nanometer dimensions are fabricated by STM assist etching with a very low voltage (-IV). Also atomic layer etching of GaAs is demonstrated by STM assist-etching using a Cl adlayer.

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