scholarly journals Thermal effects on the characteristics of AlGaAs/GaAs heterojunction bipolar transistors using two-dimensional numerical simulation

1993 ◽  
Vol 40 (1) ◽  
pp. 35-43 ◽  
Author(s):  
L.L. Liou ◽  
J.L. Ebel ◽  
C.I. Huang
Keyword(s):  
Numerical Simulation ◽  
Heterojunction Bipolar Transistors ◽  
Thermal Effects ◽  
Bipolar Transistors ◽  
Two Dimensional

Two-dimensional analysis for emitter ledge thickness of InGaP∕GaAs heterojunction bipolar transistors

2007 ◽  
Vol 90 (4) ◽  
pp. 043510 ◽  
Author(s):  
Shiou-Ying Cheng ◽  
Kuei-Yi Chu ◽  
Li-Yang Chen ◽  
Lu-Ann Chen ◽  
Chun-You Chen
Keyword(s):  
Dimensional Analysis ◽  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Two Dimensional

Numerical Simulation of Zone-Melting Recrystallization of Thin Silicon Films With A Tungsten Halogen Lamp

1991 ◽  
Vol 235 ◽  
Author(s):  
Richard D. Robinson ◽  
Ioannis N. Miaoulis
Keyword(s):  
Numerical Simulation ◽  
Parametric Study ◽  
Thermal Effects ◽  
Zone Melting ◽  
Incandescent Lamp ◽  
Silicon Films ◽  
Halogen Lamp ◽  
Two Dimensional ◽  
Thin Silicon ◽  
Tungsten Halogen Lamp

ABSTRACTA two dimensional numerical simulation of incandescent lamp Zone-Melting Recrystallization (ZMR) was performed. A parametric study examined the thermal effects of lamp intensity, susceptor temperature, and ambient reflectivity, on the melt zone. The melt zone was found to vary linearly with lamp intensity and parabolically with susceptor temperature and ambient reflectivity.

Sign in / Sign up

Export Citation Format

Share Document