Fracture Behavior of Silicon Cut with a High Power Laser

1991 ◽  
Vol 226 ◽  
Author(s):  
C.C. Chao ◽  
R. Chleboski ◽  
E.J. Henderson ◽  
C.K. Holmes ◽  
J.P. Kalejs ◽  
...  
Keyword(s):  
Single Crystal ◽  
Fracture Strength ◽  
High Power ◽  
Single Crystal Silicon ◽  
Strength Distribution ◽  
Power Laser ◽  
Crystal Silicon ◽  
Element Analysis ◽  
Cut Edge ◽  
Basic Hypothesis

AbstractThe fracture twist test is used to obtain the statistical fracture strength distribution for 10-cm square single crystal and polycrystalline silicon wafers cut with a high-power Nd:YAG laser. Tensile wafer edge stresses at fracture are calculated using nonlinear finite element analysis, and the model results are used to examine the limitations of linear torsion and plate theories. The basic hypothesis is that fracture strength of laser-cut wafers is limited by microcracks formed by large residual tensile stresses produced in the cut edge upon cooling after cutting. Differences are found between single crystal CZ and polycrystalline EFG silicon material Weibull parameters characterizing the fracture strength distribution. These indicate that there is a statistical influence of material variables on the fracture strength of the EFG silicon, which lowers its strength and increases the variance of fracture response in comparison to single crystal silicon.

Strength distribution of single-crystal silicon theta-like specimens

2010 ◽  
Vol 63 (4) ◽  
pp. 422-425 ◽  
Author(s):  
Michael S. Gaither ◽  
Frank W. DelRio ◽  
Richard S. Gates ◽  
Edwin R. Fuller ◽  
Robert F. Cook
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Strength Distribution ◽  
Crystal Silicon

Etching Process Effects on Surface Structure, Fracture Strength, and Reliability of Single-Crystal Silicon Theta-Like Specimens

2013 ◽  
Vol 22 (3) ◽  
pp. 589-602 ◽  
Author(s):  
Michael S. Gaither ◽  
Richard S. Gates ◽  
Rebecca Kirkpatrick ◽  
Robert F. Cook ◽  
Frank W. DelRio
Keyword(s):  
Single Crystal ◽  
Surface Structure ◽  
Fracture Strength ◽  
Single Crystal Silicon ◽  
Etching Process ◽  
Crystal Silicon ◽  
Process Effects

A Study on the Nanoindentation Behaviour of Single Crystal Silicon Using Hybrid MD-FE Method

2008 ◽  
Vol 32 ◽  
pp. 259-262 ◽  
Author(s):  
Akbar Afaghi Khatibi ◽  
Bohayra Mortazavi
Keyword(s):  
Molecular Dynamics ◽  
Finite Element ◽  
Single Crystal ◽  
Material Properties ◽  
Single Crystal Silicon ◽  
Dynamics Simulation ◽  
Fe Method ◽  
Crystal Silicon ◽  
Element Analysis ◽  
Nano Scale

Developing new techniques for the prediction of materials behaviors in nano-scales has been an attractive and challenging area for many researches. Molecular Dynamics (MD) is the popular method that is usually used to simulate the behavior of nano-scale material. Considering high computational costs of MD, however, has made this technique inapplicable as well as inflexible in various situations. To overcome these difficulties, alternative procedures are thought. Considering its capabilities, Finite Element Analysis (FEA) seems to be the most appropriate substitute for MD simulations in most cases. But since the material properties in nano, micro, and macro scales are different, therefore to use FEA methods in nano-scale modeling one must use material properties appropriate to that scale. To this end, a previously developed Hybrid Molecular Dynamics-Finite Element (HMDFE) approach was used to investigate the nanoindentation behavior of single crystal silicon with Berkovich indenter. In this study, a FEA model was developed based on the material properties extracted from molecular dynamics simulation of uniaxial tension test on single crystal Silicon. Eventually, by comparison of FEA results with experimental data, the validity of this new technique for the prediction of nanoindentation behavior of Silicon was concluded.

scholarly journals Influence of ICP Etching Damage on the Brittle-Fracture Strength of Single-Crystal Silicon

2007 ◽  
Vol 56 (10) ◽  
pp. 920-925 ◽  
Author(s):  
Satoshi IZUMI ◽  
Yusuke KUBODERA ◽  
Shinsuke SAKAI ◽  
Hiroshi MIYAJIMA ◽  
Kenji MURAKAMI ◽  
...  
Keyword(s):  
Brittle Fracture ◽  
Single Crystal ◽  
Fracture Strength ◽  
Single Crystal Silicon ◽  
Crystal Silicon ◽  
Icp Etching

scholarly journals Anisotropy of Fracture Strength and Fracture Toughness of Micro-Sized Single-Crystal Silicon

2005 ◽  
Vol 125 (7) ◽  
pp. 307-312 ◽  
Author(s):  
Taeko Ando ◽  
Xueping Li ◽  
Shigeki Nakao ◽  
Takashi Kasai ◽  
Mitsuhiro Shikida ◽  
...  
Keyword(s):  
Fracture Toughness ◽  
Single Crystal ◽  
Fracture Strength ◽  
Single Crystal Silicon ◽  
Crystal Silicon
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