Strength distribution of single-crystal silicon theta-like specimens

2010 ◽  
Vol 63 (4) ◽  
pp. 422-425 ◽  
Author(s):  
Michael S. Gaither ◽  
Frank W. DelRio ◽  
Richard S. Gates ◽  
Edwin R. Fuller ◽  
Robert F. Cook
Keyword(s):  
Single Crystal ◽  
Single Crystal Silicon ◽  
Strength Distribution ◽  
Crystal Silicon

Fracture Behavior of Silicon Cut with a High Power Laser

1991 ◽  
Vol 226 ◽  
Author(s):  
C.C. Chao ◽  
R. Chleboski ◽  
E.J. Henderson ◽  
C.K. Holmes ◽  
J.P. Kalejs ◽  
...  
Keyword(s):  
Single Crystal ◽  
Fracture Strength ◽  
High Power ◽  
Single Crystal Silicon ◽  
Strength Distribution ◽  
Power Laser ◽  
Crystal Silicon ◽  
Element Analysis ◽  
Cut Edge ◽  
Basic Hypothesis

AbstractThe fracture twist test is used to obtain the statistical fracture strength distribution for 10-cm square single crystal and polycrystalline silicon wafers cut with a high-power Nd:YAG laser. Tensile wafer edge stresses at fracture are calculated using nonlinear finite element analysis, and the model results are used to examine the limitations of linear torsion and plate theories. The basic hypothesis is that fracture strength of laser-cut wafers is limited by microcracks formed by large residual tensile stresses produced in the cut edge upon cooling after cutting. Differences are found between single crystal CZ and polycrystalline EFG silicon material Weibull parameters characterizing the fracture strength distribution. These indicate that there is a statistical influence of material variables on the fracture strength of the EFG silicon, which lowers its strength and increases the variance of fracture response in comparison to single crystal silicon.

Analysis of Silicon-On-Insulator Structures Formed By Oxygen Ion Implantation

1985 ◽  
Vol 43 ◽  
pp. 300-301
Author(s):  
N. Lewis ◽  
E. L. Hall ◽  
A. Mogro-Campero ◽  
R. P. Love
Keyword(s):  
Ion Implantation ◽  
Single Crystal ◽  
Single Crystal Silicon ◽  
Silicon Layer ◽  
Device Fabrication ◽  
Silicon On Insulator ◽  
High Dose ◽  
Crystal Silicon ◽  
Oxygen Ion ◽  
Oxygen Ion Implantation

The formation of buried oxide structures in single crystal silicon by high-dose oxygen ion implantation has received considerable attention recently for applications in advanced electronic device fabrication. This process is performed in a vacuum, and under the proper implantation conditions results in a silicon-on-insulator (SOI) structure with a top single crystal silicon layer on an amorphous silicon dioxide layer. The top Si layer has the same orientation as the silicon substrate. The quality of the outermost portion of the Si top layer is important in device fabrication since it either can be used directly to build devices, or epitaxial Si may be grown on this layer. Therefore, careful characterization of the results of the ion implantation process is essential.

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