Rapid Isothermal Processing of Strained GeSi Layers

1991 ◽  
Vol 224 ◽  
Author(s):  
D. K. Nayak ◽  
K. Kamjoo ◽  
J. S. Park ◽  
J. C. S. Woo ◽  
K. L. Wang
Keyword(s):  
High Temperature ◽  
Structural Stability ◽  
Annealing Temperature ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Thermal Cycles ◽  
Double Crystal ◽  
X Ray ◽  
Rapid Isothermal Processing ◽  
Temperature Time

AbstractThe effects of high temperature-time thermal cycles on the structural stability of GexSi1−x/Si and Si/GexSi1−x/Si layers are studied, using double-crystal x-ray diffraction. The temperature-time cycles chosen in this study are useful for the fabrication of submicron Si MOSFETs. The electrical characteristics of GeSi/Si p-n heterojunctions as a function of annealing temperature and time are also presented.

scholarly journals Crystal Chemistry and Luminescence Properties of Eu-Doped Polycrystalline Hydroxyapatite Synthesized by Chemical Precipitation at Room Temperature

Crystals ◽  
2020 ◽  
Vol 10 (4) ◽  
pp. 250 ◽  
Author(s):  
Francesco Baldassarre ◽  
Angela Altomare ◽  
Nicola Corriero ◽  
Ernesto Mesto ◽  
Maria Lacalamita ◽  
...  
Keyword(s):  
Fourier Transform ◽  
High Temperature ◽  
Inductively Coupled Plasma ◽  
Room Temperature ◽  
Annealing Temperature ◽  
Chemical Precipitation ◽  
Precipitation Method ◽  
X Ray Diffraction ◽  
X Ray ◽  
Inductively Coupled

Europium-doped hydroxyapatite Ca10(PO4)6(OH)2 (3% mol) powders were synthesized by an optimized chemical precipitation method at 25 °C, followed by drying at 120 °C and calcination at 450 °C and 900 °C. The obtained nanosized crystallite samples were investigated by means of a combination of inductively coupled plasma (ICP) spectroscopy, powder X-ray diffraction (PXRD), Fourier Transform Infrared (FTIR), Raman and photoluminescence (PL) spectroscopies. The Rietveld refinement in the hexagonal P63/m space group showed europium ordered at the Ca2 site at high temperature (900 °C), and at the Ca1 site for lower temperatures (120 °C and 450 °C). FTIR and Raman spectra showed slight band shifts and minor modifications of the (PO4) bands with increasing annealing temperature. PL spectra and decay curves revealed significant luminescence emission for the phase obtained at 900 °C and highlighted the migration of Eu from the Ca1 to Ca2 site as a result of increasing calcinating temperature.

Mo/Cr Metallization for Silicon Device Interconnection

1986 ◽  
Vol 71 ◽  
Author(s):  
M. J. Kim ◽  
R. A. Saia
Keyword(s):  
Annealing Temperature ◽  
Vlsi Circuits ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Thermal Reliability ◽  
X Ray ◽  
Layer Contact ◽  
Silicon Device ◽  
Dry Etch

AbstractA molybdenum and chromium double layer contact has been developed for the first level metallization of VLSI circuits. An 800Å layer of chromium deposited under a thick molybdenum conductor provides good ohmic contact to p+ and n+ silicon and also promotes metal adhesion to the substrate. The molybdenum has good step coverage and acceptable current carrying capacity when its thickness exceeds 5000Å. Both metals are sequentially sputtered in one pumpdown and patterned with a single RIE step using CCI4 + O2. One pm diameter contacts and 1.5µm wide lines are formed in VLSI geometries using all dry etch processes. Electrical characteristics and thermal reliability were evaluated as a function of annealing temperature. Contact resistance and shallow device junctions are stable up to 500°C for p+/n diodes and up to 450°C for n+/p diodes. The sheet resistance of the film in contact with silicon rapidly increases at 525°C as silicon outdiffuses to form (Mox Crr−x)Si2 The mechanism and cause of the high temperature degradation was studied by mean of SIMS, x-ray diffraction analysis, SEM and electrical measurements.

Electrical Characteristics of ZnTe Thermoelectric Thin Films

2014 ◽  
Vol 535 ◽  
pp. 688-691 ◽  
Author(s):  
Wen Shiush Chen ◽  
Cheng Hsing Hsu ◽  
Wen Hua Kao ◽  
Yi Ting Yu ◽  
Pai Chuan Yang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Thermoelectric Device ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Device Applications ◽  
Thermoelectric Thin Films ◽  
Thermal Coating

Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600°C to 800°C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700°C are 3.5×1015cm-3, 0.25 Ω-cm, and 49 cm2V-1S-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.

Thermal structural stability of a multi-component olivine electrode for lithium ion batteries

CrystEngComm ◽  
2016 ◽  
Vol 18 (39) ◽  
pp. 7463-7470 ◽  
Author(s):  
Kyu-Young Park ◽  
Hyungsub Kim ◽  
Seongsu Lee ◽  
Jongsoon Kim ◽  
Jihyun Hong ◽  
...  
Keyword(s):  
High Temperature ◽  
Neutron Diffraction ◽  
Lithium Ion Batteries ◽  
Structural Stability ◽  
Cathode Materials ◽  
Structural Evolution ◽  
Lithium Ion ◽  
X Ray Diffraction ◽  
X Ray

In this paper, the structural evolution of Li(Mn1/3Fe1/3Co1/3)PO4, which is a promising multi-component olivine cathode materials, is investigated using combined in situ high-temperature X-ray diffraction and flux neutron diffraction analyses at various states of charge.

X-Ray Characterisation of Boron Delta Layers in Si and SiGe

1991 ◽  
Vol 220 ◽  
Author(s):  
A. R. Powell ◽  
R. A. Kubiak ◽  
T. E. Whall ◽  
E. H. C. Parker ◽  
D. K. Bowen
Keyword(s):  
High Temperature ◽  
Epitaxial Layers ◽  
X Ray Diffraction ◽  
Double Crystal ◽  
X Ray ◽  
Carrier Confinement ◽  
Delta Layer ◽  
Non Destructive ◽  
Sheet Density

ABSTRACTWe demonstrate the growth, by MBE, of high sheet density B delta layers in both Si and SiGe epitaxial layers. Double Crystal X-Ray Diffraction is shown to be a non-destructive method of characterising the width of very narrow (0.3 nm) delta layers and the sheet density of the activated B. The ability of delta layers to withstand high temperature anneals is considered and it is found that a 750 °C anneal for 1 hour broadens the delta layer to beyond the width required for carrier confinement.

Metallurgical and Electrical Characteristics of MoAlx Schottky Contacts to n-GaAs

1992 ◽  
Vol 260 ◽  
Author(s):  
T. S. Huang ◽  
J. G. Peng ◽  
C. C. Lin
Keyword(s):  
Thermal Processing ◽  
Annealing Temperature ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Interfacial Stability ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barrier Heights ◽  
Current Voltage

ABSTRACTThe interfacial stability, surface morphology and electrical characteristics of MoAlx contacts to n-GaAs have been investigated by using x-ray diffraction, scanning electron microscopy, sheet resistance and current-voltage measurements. The compositions of rf-cosputtered MoAlx films were x = 0.35, 2.7, and 7.0, respectively. The contacts were annealed by rapid thermal processing in the temperature range 500–1000 °C for 20 s. The interfaces of MoAl0.35/GaAs and MoAl2,7/GaAs were stable up to 900 °C, while the interfaces of MoAl7.0/GaAs were less stable and reactions occurred above 800 °C. The variations of sheet resistances and the barrier heights of the Schottky diodes as a function of annealing temperatures can be well correlated to the interfacial stability. The MoAl2.7/n-GaAs diodes exhibited the best stability and were characterized by the highest barrier height (0.98 V) and nearly unit ideality factor (1.11) after annealing at 900 °C. For all thermally stable MoAlx/n-GaAs Schottky diodes, the barrier heights increased with annealing temperature.

Annealing induced structural changes and microcracking in Mo-Mo3Si

2002 ◽  
Vol 753 ◽  
Author(s):  
X.-L. Wang ◽  
J. H. Schneibel ◽  
Y. D. Wang ◽  
J. W. Richardson
Keyword(s):  
Electron Microscopy ◽  
Experimental Data ◽  
High Temperature ◽  
Structural Changes ◽  
Thermal Stresses ◽  
Annealing Temperature ◽  
Composition Analysis ◽  
X Ray Diffraction ◽  
X Ray ◽  
Scanning Electron

ABSTRACTCast Mo-Mo3Si intermetallic composites develop microcracks after annealing at high temperature. Neutron diffraction, x-ray diffraction, composition analysis, and scanning electron microscopy have been used to characterize the structural changes induced by annealing of Mo-Mo3Si. It is shown that the observed cracking cannot be attributed to differential thermal stresses that developed on cooling from the annealing temperature. Instead, the experimental data suggest that the cracks were initiated at high temperature, possibly due to diffusion of Si atoms from supersaturated α-Mo to Mo3Si.

Electrical Characteristics of BaxSr1-xTiO3(BST) Capacitors Implemented with Ti-Al Electrodes

2006 ◽  
Vol 928 ◽  
Author(s):  
Thottam S Kalkur ◽  
Jeff Whitescarver ◽  
Nick Cramer
Keyword(s):  
Dielectric Constant ◽  
Substrate Temperature ◽  
Diffraction Analysis ◽  
Annealing Temperature ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Decoupling Capacitor ◽  
Electrical Characterizations ◽  
Deposited Film

AbstractTi-Al was used as the electrode for RF magnetron sputtered BST film at a substrate temperature of 450°C for decoupling capacitor applications. X-ray diffraction analysis shows that the deposited film BST film is amorphous. Electrical characterizations of the devices performed by capacitance versus voltage measurements show a dielectric constant of about 55. With increase in annealing temperature above 450°C, the capacitance was found to decrease significantly.

Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode

2008 ◽  
Vol 600-603 ◽  
pp. 643-646 ◽  
Author(s):  
Akimasa Kinoshita ◽  
Takashi Nishi ◽  
Takasumi Ohyanagi ◽  
Tsutomu Yatsuo ◽  
Kenji Fukuda ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Voltage Drop ◽  
Schottky Contact ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Forward Voltage Drop

The reaction and phase formation of the Ti/SiC Schottky contact as a function of the annealing temperature (400~700oC) were investigated. The Schottky barrier height (fb) and the crystal structure of the samples annealed at the different temperature were measured by the forward current-voltage (IV) characteristics and the x-ray diffraction (XRD), respectively. XRD measurements were performed in the w-2q scan and the pole figure measurement for Ti (101) diffraction peak. The fb was changed as a function of temperature. It was concluded that the fb variation and non-uniformity of the samples annealed at 400oC, 500oC, 600 oC and 700oC was caused by changing the condition at the interface between SiC substrate and Ti. We fabricated the 600V Ti/SiC silicidation SBD annealed at 500oC for 5min. As a result, a low forward voltage drop, low reverse leakage current and stability at high temperature (200 oC) for the Ti/SiC silicidation SBD were shown.

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