Metallurgical and Electrical Characteristics of MoAlx Schottky Contacts to n-GaAs

1992 ◽  
Vol 260 ◽  
Author(s):  
T. S. Huang ◽  
J. G. Peng ◽  
C. C. Lin
Keyword(s):  
Thermal Processing ◽  
Annealing Temperature ◽  
Schottky Diodes ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
Interfacial Stability ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barrier Heights ◽  
Current Voltage

ABSTRACTThe interfacial stability, surface morphology and electrical characteristics of MoAlx contacts to n-GaAs have been investigated by using x-ray diffraction, scanning electron microscopy, sheet resistance and current-voltage measurements. The compositions of rf-cosputtered MoAlx films were x = 0.35, 2.7, and 7.0, respectively. The contacts were annealed by rapid thermal processing in the temperature range 500–1000 °C for 20 s. The interfaces of MoAl0.35/GaAs and MoAl2,7/GaAs were stable up to 900 °C, while the interfaces of MoAl7.0/GaAs were less stable and reactions occurred above 800 °C. The variations of sheet resistances and the barrier heights of the Schottky diodes as a function of annealing temperatures can be well correlated to the interfacial stability. The MoAl2.7/n-GaAs diodes exhibited the best stability and were characterized by the highest barrier height (0.98 V) and nearly unit ideality factor (1.11) after annealing at 900 °C. For all thermally stable MoAlx/n-GaAs Schottky diodes, the barrier heights increased with annealing temperature.

scholarly journals Electrical Properties of Rapidly Annealed Ir and Ir/Au Schottky Contacts on n-Type InGaN

2012 ◽  
Vol 2012 ◽  
pp. 1-9 ◽  
Author(s):  
V. Rajagopal Reddy ◽  
B. Prasanna Lakshmi ◽  
R. Padma
Keyword(s):  
Barrier Height ◽  
Annealing Temperature ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Interface State ◽  
Schottky Contacts ◽  
Barrier Heights ◽  
Current Voltage ◽  
State Densities ◽  
Optimum Annealing Temperature

The effect of annealing temperature on electrical characteristics of iridium (Ir) and iridium/gold (Ir/Au) Schottky contacts to n-type InGaN have been investigated by means of current-voltage (I-V) and capacitance-voltage (C-V) techniques. It is observed that the barrier height of Ir/n-InGaN and Au/Ir/n-InGaN Schottky diodes increases after annealing at 300∘C for 1 min in N2 ambient compared to the as-deposited. However, the barrier heights are found to be decreased somewhat after annealing at 500∘C for the both Ir and Ir/Au Schottky contacts. From the above observations, it is clear that the optimum annealing temperature for both Ir and Ir/Au Schottky contacts is 300∘C. Moreover, the barrier height (ϕb), ideality factor (n) and series resistance (RS) are determined using Cheung’s and Norde methods. Besides, the energy distribution of interface state densities are determined from the forward bias I-V characteristics by taking into account the bias dependence of the effective barrier height. Based on the above results, it is clear that both Ir and Ir/Au Schottky contacts exhibit a kind of thermal stability during annealing.

scholarly journals Investigation of electrical and structural properties of Ag/TiO2/n-InP/Au Schottky diodes with different thickness TiO2 interface

2021 ◽  
Author(s):  
Ahmet Kürşat Bilgili ◽  
Rabia Çağatay ◽  
Mustafa Kemal Öztürk ◽  
Metin Özer
Keyword(s):  
Schottky Diodes ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barrier Heights ◽  
Current Voltage ◽  
Two Samples ◽  
Structural And Electrical Properties ◽  
Ideal Diode ◽  
Conclusion Section ◽  
Different Thickness

Abstract In this study, structural and electrical properties of Ag/TiO2/n-InP/Au Schottky barrier diodes are investigated. Particle size, d- spacing, micro-strain, ideality factor and barrier heights of two samples are determined for two different interfacial TiO2 layer thickness. X-ray diffraction (XRD) and current-voltage (I-V) measurements are employed for mentioned parameters. It is seen that sample with 60 Å TiO2 interfacial layer is a more ideal diode. The reason for this is argued in main text and conclusion section.

Electrical Characteristics of Ti/4H-SiC Slicidation Schottky Barrier Diode

2008 ◽  
Vol 600-603 ◽  
pp. 643-646 ◽  
Author(s):  
Akimasa Kinoshita ◽  
Takashi Nishi ◽  
Takasumi Ohyanagi ◽  
Tsutomu Yatsuo ◽  
Kenji Fukuda ◽  
...  
Keyword(s):  
Schottky Barrier ◽  
Schottky Barrier Height ◽  
Annealing Temperature ◽  
Voltage Drop ◽  
Schottky Contact ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
X Ray ◽  
Current Voltage ◽  
Forward Voltage Drop

The reaction and phase formation of the Ti/SiC Schottky contact as a function of the annealing temperature (400~700oC) were investigated. The Schottky barrier height (fb) and the crystal structure of the samples annealed at the different temperature were measured by the forward current-voltage (IV) characteristics and the x-ray diffraction (XRD), respectively. XRD measurements were performed in the w-2q scan and the pole figure measurement for Ti (101) diffraction peak. The fb was changed as a function of temperature. It was concluded that the fb variation and non-uniformity of the samples annealed at 400oC, 500oC, 600 oC and 700oC was caused by changing the condition at the interface between SiC substrate and Ti. We fabricated the 600V Ti/SiC silicidation SBD annealed at 500oC for 5min. As a result, a low forward voltage drop, low reverse leakage current and stability at high temperature (200 oC) for the Ti/SiC silicidation SBD were shown.

Characteristics of Pdai Schottky Contacts to n-GaAs

1993 ◽  
Vol 319 ◽  
Author(s):  
T.S. Huang ◽  
J.G. Pang
Keyword(s):  
Depth Profiling ◽  
Schottky Contacts ◽  
Voltage Measurement ◽  
X Ray Diffraction ◽  
X Ray ◽  
Barrier Heights ◽  
Β Phase ◽  
Transmission Electron ◽  
Current Voltage ◽  
Thermal Stability Of

AbstractMetallurgical and electrical properties of β-phase PdAl Schottky metallizations on n-GaAs after rapid thermal annealing for 20 s in the temperature range 500-1000°C have been investigated using x-ray diffraction, transmission electron microscopy, Auger depth profiling and current-voltage measurement. The Al-rich contacts were stable up to 900°C, whereas the Pdrich contacts were less stable. The thermal stability of Pd-rich contacts decreased with increasing Pd composition, and interfacial reaction after high temperature annealing resulted in the formation of PdGa compound. The interface between Al-rich PdAI and GaAs substrate was quite sharp even after 900°C anneal. The Schottky barrier heights of Al-rich PdAl contacts increased with annealing temperature. The barrier height enhancement in the annealed Al-rich contacts can be attributed to the thin AlxGal−xAs layer formed at the interface between PdAl and GaAs.

Temperature Sensors Based on AlN/4H-SiC Diodes

2021 ◽  
Vol 13 (7) ◽  
pp. 1318-1323
Author(s):  
Myeong-Cheol Shin ◽  
Dong-Hyeon Kim ◽  
Seong-Woo Jung ◽  
Michael A. Schweitz ◽  
Sang-Mo Koo
Keyword(s):  
Annealing Temperature ◽  
Schottky Diodes ◽  
Forward Bias ◽  
Temperature Sensors ◽  
Electrical Characteristics ◽  
Voltage Range ◽  
Radio Frequency Sputtering ◽  
Sensing Applications ◽  
Current Voltage ◽  
Dc Bias

ABSTRACTThis study report on the formation of AlN/SiC heterostructure Schottky diodes for use of temperature sensing applications enhance the sensitivity. We analyzed the sensitivity of the AlN/SiC Schottky diode sensor depending on the annealing temperature. AlN/4H-SiC Schottky diodes were fabricated by depositing aluminum nitride (AlN) thin film on 4H/SiC by radio frequency sputtering. The forward bias electrical characteristics were determined under DC bias (in the voltage range of 0–1.5 V). The ideality factor, barrier height, and sensitivity were derived through current–voltage–temperature (I–V–T) measurements in the temperature range of 300–500 K. The sensitivity of the AlN/4H-SiC Schottky barrier diode ranged from 2.5–5.0 mV/K.

Mo/Cr Metallization for Silicon Device Interconnection

1986 ◽  
Vol 71 ◽  
Author(s):  
M. J. Kim ◽  
R. A. Saia
Keyword(s):  
Annealing Temperature ◽  
Vlsi Circuits ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Thermal Reliability ◽  
X Ray ◽  
Layer Contact ◽  
Silicon Device ◽  
Dry Etch

AbstractA molybdenum and chromium double layer contact has been developed for the first level metallization of VLSI circuits. An 800Å layer of chromium deposited under a thick molybdenum conductor provides good ohmic contact to p+ and n+ silicon and also promotes metal adhesion to the substrate. The molybdenum has good step coverage and acceptable current carrying capacity when its thickness exceeds 5000Å. Both metals are sequentially sputtered in one pumpdown and patterned with a single RIE step using CCI4 + O2. One pm diameter contacts and 1.5µm wide lines are formed in VLSI geometries using all dry etch processes. Electrical characteristics and thermal reliability were evaluated as a function of annealing temperature. Contact resistance and shallow device junctions are stable up to 500°C for p+/n diodes and up to 450°C for n+/p diodes. The sheet resistance of the film in contact with silicon rapidly increases at 525°C as silicon outdiffuses to form (Mox Crr−x)Si2 The mechanism and cause of the high temperature degradation was studied by mean of SIMS, x-ray diffraction analysis, SEM and electrical measurements.

The Study of TiWN Schottky Contacts on n-Ga0.51 In0.49P

1993 ◽  
Vol 300 ◽  
Author(s):  
Edward Y. Chang ◽  
Yeong-Lin Lai ◽  
Kuen-Chyuan Lin ◽  
Chun-Yen Chang ◽  
F. Y. Juang
Keyword(s):  
Schottky Contact ◽  
Rf Magnetron Sputtering ◽  
Schottky Contacts ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Barrier Heights ◽  
Annealing Conditions ◽  
Transmission Electron ◽  
Lattice Matched ◽  
Thermal Stability Of

ABSTRACTThe first study of the TiW nitrides (TiWNx) as the Schottky contact metals to the n type Ga0.51In0 49P has been made. The Ga0.51 In0.49P epitaxial layer was successfully grown on the GaAs substrate by LP-MOCVD to form a lattice-matched heterostructure. The RF-magnetron sputtering system was utilized for the nitride deposition. The thermal stability of the nitride films were studied using rapid thermal annealing (RTA) method. Both the electrical characteristics and the materials characteristics were investigated. The materials properties of the nitride films were characterized by X-ray diffraction (XRD), Transmission electron microscopy (TEM), and Auger electron spectroscopy (AES). The TiWNx Schottky contacts demonstrate excellent electrical and physical characteristics, even after high temperature annealing. The barrier heights range from 0.81 to 1.05 eV depending on the content of the nitrogen and the annealing conditions. The XRD and AES results show no indication of interaction at the TiWNX/GaInP interface of both as-deposited and annealed samples. The outstanding characteristics of the contact were attributed to the high bandgap nature of the Ga0.51In0.49P and the incorporation of nitrogen into the TiW films.

Electrical Characteristics of ZnTe Thermoelectric Thin Films

2014 ◽  
Vol 535 ◽  
pp. 688-691 ◽  
Author(s):  
Wen Shiush Chen ◽  
Cheng Hsing Hsu ◽  
Wen Hua Kao ◽  
Yi Ting Yu ◽  
Pai Chuan Yang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Annealing Temperature ◽  
Thermoelectric Device ◽  
Electrical Characteristics ◽  
X Ray Diffraction ◽  
Si Substrate ◽  
X Ray ◽  
Device Applications ◽  
Thermoelectric Thin Films ◽  
Thermal Coating

Thermal coating growth of ZnTe thermoelectric films were deposited on n-type Si substrate is studied. Structural analysis through x-ray diffraction (XRD) and scanning electron microscopy (SEM) were sensitive to the RTA treatment. The electrical properties and microstructure of these films were investigated with special emphasis on the effects of various annealing temperatures from 600°C to 800°C by RTA technique. The highest carrier concentration, lowest resistivity and mobility at an annealing temperature of 700°C are 3.5×1015cm-3, 0.25 Ω-cm, and 49 cm2V-1S-1. The resultant electrical properties have made ZnTe films as very interesting materials for thermoelectric device applications.

Structural and Electrical Characterization of TiB2/TiSi2 Bilayer Barrier Structure

1996 ◽  
Vol 441 ◽  
Author(s):  
G. Sade ◽  
J. Pelleg ◽  
A. Grisaru
Keyword(s):  
Diffusion Barrier ◽  
Vacuum Annealing ◽  
Schottky Diodes ◽  
Electrical Characterization ◽  
X Ray Diffraction ◽  
Cross Sectional ◽  
X Ray ◽  
Current Voltage ◽  
Thermal Stability Of

AbstractThe TiB2/TiSi2 bilayer is considered as a diffusion barrier in metallization system with Cu. The TiSi2 sublayer serves as a contact and also as an additional diffusion barrier against boron, which outdiffuses from TiB2 at high temperature annealing. The attempts to form TiSi2 by vacuum annealing of TiB2/Ti film, which was obtained by co-sputtering from elemental targets are described. The composition and the structure of the films were analyzed by Auger electron spectroscopy (AES), X-ray diffraction (XRD) and high-resolution cross-sectional TEM (HRXTEM). The Cu/TiB2/(Ti-Si)/n-Si contacts were investigated using current-voltage (I–V) on Schottky diode structures, which were prepared on n-type Si (100). The thermal stability of the TiB2/(Ti-Si) barrier was studied by structural and electrical analysis.It was observed that the lowest sheet resistance of 5.1 Ω/‪ was obtained after 850 °C annealing for 30 min, however the resulting Ti-Si layer is practically still amorphous and contains only a very small fraction of C54 TiSis in the form of microcrystallites. This layer also contained Ti5Si3 as indicated by XRD. The barrier height of Cu/TiB2/(Ti-Si)/n-Si Schottky diodes is ˜0.6 V and it does not show significant changes in the range 400–700 °C. Electrical monitoring is a very effective tool to detect deterioration of the barrier. No penetration is observed by AES at 700 °C, while the I–V curve shows changes in properties.

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