The Effects of Interface Strain and Dipole Layers on the Electronic Properties of Lattice Matched Rn-V Semiconductor Superlattices

1991 ◽  
Vol 221 ◽  
Author(s):  
J. S. Nelson ◽  
S. R. Kurtz ◽  
L. R. Dawson ◽  
J. A. Lott ◽  
C. Y. Fong
Keyword(s):  
Electronic Properties ◽  
Semiconductor Superlattices ◽  
Interface Strain ◽  
Lattice Matched

Effects of substrate orientation on growth of epitaxial layers

1996 ◽  
Vol 54 ◽  
pp. 948-949
Author(s):  
Y. Hsu ◽  
T. S. Kuan ◽  
W. I. Wang
Keyword(s):  
Diffraction Pattern ◽  
High Order ◽  
Sharp Interface ◽  
Epitaxial Layers ◽  
Semiconductor Superlattices ◽  
Substrate Orientation ◽  
Perfect Lattice ◽  
Gaas Substrates ◽  
Different Temperatures ◽  
Lattice Matched

Semiconductor superlattices or epitaxial overlayers have so far been grown mostly on (100)-oriented substrates. It has long been suspected that growth on surfaces such as (m11) could produce equally good or better epitaxial layers. In this work, we have systematically tested the growth of multi- or single-layered structures, including the GaAs/AlAs, AlAs/Ge, and GaAs/Si systems, on surfaces of different orientations. The crystallinity and defect mechanisms in the layers grown on (100), (311), and (511) surfaces at different temperatures were compared. In most cases we found that (311) surfaces can produce epitaxial layers as good as on (100) surfaces.Perfect lattice-matched GaAs/AIAs superlattices were grown on (311)A-, (311)B-, and (100)-oriented GaAs substrates. Superlattices with good layer morphology were achieved on all three surfaces at 600°C. Fig. 1(a) shows an image of a typical GaAs/AIAs superlattice grown on a (311)B surface. This superlattice exhibits sharp interface abruptness as indicated by the high-order satellites observed in the diffraction pattern in Fig. 1(b).

Theory of Semiconductor Heterojunctions

1982 ◽  
Vol 18 ◽  
Author(s):  
J. Pollmann ◽  
A. Mazur
Keyword(s):  
Band Structure ◽  
Transport Properties ◽  
Electronic Properties ◽  
Short Review ◽  
Band Edge ◽  
Band Structures ◽  
Semiconductor Heterojunctions ◽  
Lattice Matched

A short review of characteristic electronic properties of heterojunction interfaces is given. Band edge discontinuities and interface band structures for lattice-matched junctions are discussed in detail. The examples presented include non-polar and polar junctions as well as overlayer systems. The results of involved calculations are interpreted in terms of simple physically appealing pictures by directly relating the changes in bonds across an interface to the resulting bands in the interface band structure. The meaning of the results for the transport properties of semiconductor heterojunctions is briefly assessed.

scholarly journals Optical properties of InAsBi and optimal designs of lattice-matched and strain-balanced III-V semiconductor superlattices

2016 ◽  
Vol 119 (22) ◽  
pp. 225701 ◽  
Author(s):  
P. T. Webster ◽  
A. J. Shalindar ◽  
N. A. Riordan ◽  
C. Gogineni ◽  
H. Liang ◽  
...  
Keyword(s):  
Optical Properties ◽  
Optimal Designs ◽  
Semiconductor Superlattices ◽  
Lattice Matched
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